G11097-0606S

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Image sensor with 64 × 64 pixels developed for two-dimensional infrared imaging www.hamamatsu.com 1 Block diagram Spectral response range: 0.95 to 1.7 μm Excellent linearity by offset compensation High sensitivity: 1600 nV/e- Thermal imaging monitor Laser beam profi ler Near infrared image detection VIDEO Shift register Shift register Start End Signal processing circuit 64 × 64 pixels Offset compensation circuit KMIRC0043EA A sequence of operation of the readout circuit is described below. In the readout circuit, the charge ampli fi er output voltage is sampled and held simultaneously at all pixels during the integration time deter- mined by the low period of the master start pulse (MSP) which is as a frame scan signal. Then the pixels are scanned and their video signals are output. Pixel scanning starts from the starting point at the upper left in the right fi gure. The vertical shift register scans from top to bottom in the right fi gure while sequentially selecting each row. For each pixel on the selected row, the following operations are per- formed:  Transfers the sampled and held optical signal information to the sig- nal processing circuit as a signal voltage. Resets the ampli fi er in each pixel after having transferred the signal voltage and transfers the reset voltage to the signal processing circuit. ‘ The signal processing circuit samples and holds the signal voltage  and reset voltage . ’ The horizontal shift register scans from left to right in the right fi g- ure, and the voltage difference between  and  is calculated in the offset compensation circuit. This eliminates the ampli fi er offset volt- age in each pixel. The voltage difference between  and  is output as the output signal in the form of serial data. The vertical shift register then selects the next row and repeats the operations from  to ’. After the vertical shift register advances to the 64th row, the MSP, which is a frame scan signal, goes low. After that, when the MSP goes high and then low, the reset switches for all pixels are simultaneously released and the next frame integration begins. Simultaneous charge integration for all pixels (global shutter mode) Simple operation (built-in timing generator) One-stage TE-cooled Low cost Foreign object detection The G11097-0606S has a hybrid structure consisting of a CMOS readout circuit (ROIC: readout integrated circuit) and back- illuminated InGaAs photodiodes. Each pixel is made up of an InGaAs photodiode and a ROIC electrically connected by an indium bump. A timing generator in the ROIC provides an analog video output and AD-TRIG output which are easily ob- tained by just supplying a master clock (MCLK) and master start pulse (MSP) from external digital inputs. The G11097-0606S has 64×64 pixels arrayed at a 50 μm pitch and their signals are read out from a single video line. Light incident on the InGaAs photodiodes is converted into electrical signals which are then input to the ROIC through indium bumps. Electrical signals in the ROIC are converted into voltage signals by charge ampli fi ers and then sequentially output from the video line by the shift register. The G11097-0606S is hermetically sealed in a TO-8 package together with a one- stage thermoelectric cooler to deliver low-cost yet highly stable operation. Features Applications

InGaAs area image sensor G11097-0606S Element structure Electrical and optical characteristics (Ta=25 °C, Td=25 °C, Vdd=5 V, PD_bias=4.5 V) Absolute maximum ratings Parameter Symbol Value Unit Supply voltage Vdd -0.3 to +5.5 V Clock pulse voltage V(MCLK) Vdd + 0.5 V Start pulse voltage V(MSP) Vdd + 0.5 V Operating temperature Topr -10 to +60 °C Storage temperature Tstg -20 to +70 °C TE-cooler allowable current Ic 1.3 A TE-cooler allowable voltage Vc 1.9 V Thermistor power dissipation Pth 0.2 mW Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Parameter Specifi cation Unit Image size 3.2 × 3.2 mm Cooling One-stage TE-cooled - Number of total pixels 4096 (64 × 64) pixels Number of effective pixels 4096 (64 × 64) pixels Pixel size 50 × 50 μm Pixel pitch 50 μ m Package TO-8 16-pin metal (refer to dimensional outline) - Window Anti-refl ective coating borosilicate glass - Parameter Symbol Condition Min. Typ. Max. Unit Spectral response range λ - 0.95 to 1. 7 - μm Peak sensitivity wavelength λp - 1.55 - μm Photo sensitivity S λ=λp 0.7 0.8 - A/W Conversion effi ciency CE - 1600 - nV/e - Saturation charge Qsat - 1.25 - Me - Saturation output voltage Vsat 1.6 2.0 - V Photoresponse nonuniformity*1 PRNU After subtracting dark output, Integration time 5 ms - ±10 ±20 % Dark output V D 1.1 1.3 1.5 V Dark current ID - 2 10 pA Dark output nonuniformity DSNU - ±0.02 ±0.15 V Temperature coeffi cient of dark output ΔTDS - 1.1 - times/°C Readout noise Nr Integration time 10 ms - 600 1200 μV rms Dynamic range DR - 3300 - - Defective pixel*2 -- - 1 % *1: Measured at one-half of the saturation, excluding fi rst and last pixels *2: Pixels with photo response non-uniformity (integration time 5 ms), readout noise, or dark current higher than the maximum value One or less cluster of four or more contiguous defective pixels <Examples of four contiguous defective pixels> Normal pixel Defective pixel KMIRC0060EB

InGaAs area image sensor G11097-0606S Photodiode Reset Switch Sample-and-hold Switch Whole image sensor 1 pixel PD_bias Vdd 0.1 μF Vb1 Vss AD_TRIG VIDEO THERM THERM External input MCLK MSP Shift register Thermistor Offset compensation circuit Timing generator TE(+) TE(-) One-stage TE-cooler KMIRC0063ED Equivalent circuit Recommended drive conditions Electrical characteristics (Ta=25 °C) Parameter Symbol Min. Typ. Max. Unit. Supply voltage Vdd 4.9 5 5.1 V Ground Vss - 0 - V Element bias PD_bias 4 .4 4.5 4.6 V Clock pulse voltage High V(MCLK) Vdd - 0.5 Vdd Vdd + 0.5 VLow 0 0 0.5 Start pulse voltage High V(MSP) Vdd - 0.5 Vdd Vdd + 0.5 VLow 0 0 0.5 Parameter Symbol Min. Typ. Max. Unit. Current consumption I(Vdd) - 30 60 mA I(PD_bias) - - 1 mA Video output v Clock frequency f - - 40 MHz Video data rate fV - f/8 5 MHz Thermistor resistance Rth 8.2 9 9.8 kΩ

InGaAs area image sensor G11097-0606S Connection example VIDEO (signal output) AD_TRIG (output for A/D conversion) (Reference) Parameter values Power supply for analog buffer (A) +15 V-15 VGND Power supply for digital buffer (D) +5 VGND Power supply for sensor +5 VGND VR1 G11097-0606S PD_bias VR1 MCLK (input) MSP (input) Symbol 10 Ω 10 kΩ 330 pF 0.1 μF Value (Reference) Buffer type Symbol AD847 TC74VHCT541 Type Vb1 TE(+) TE(-) THERM THERM Temperature control circuit +5 V (D) +5 V (D) -15 V (A) +15 V (A) +5 V (D) Measurement board KMIRC0052ED

InGaAs area image sensor G11097-0606S KMIRC0044EC Timing chart KMIRC0044EC (Video űŦųŪŰť)

8 MCLK 94 MCLK*2 8 MCLK 8 MCLK

One frame scanning period [64 rows × 64 columns (including blank) × 8 MCLK] VIDEO (output) MCLK (input) MSP (input) AD_TRIG (output)

8 MCLK 6 MCLK

(Blank period)(Blank period) *1: A minimum number of MCLK of integration time is 40 MCLK. *2: There are blanks of 94 MCLK between each row. *3: A minimum number of MCLK of reset period is 200 MCLK.

8 MCLK

(1 ch) (2 ch) (65 ch) (66 ch) (4096 ch) (Integration time)*1 (Reset period)*3 tr(MCLK)tf(MCLK) Integration time tf(MSP) tr(MSP) t2 t1 t3 tpw(MSP) (Blank period) tpw(MCLK)

90 MCLK

The video output from a single pixel is equal to 8 MCLK (master clock) pulses. The MSP (master start pulse) is a signal for set ting the integration time, so making the low (0 V) period of the MSP longer will extend the integration time. The MSP also functions as a signal that triggers each control signal to perform frame scan. When the MSP goes from low (0 V) to high (5 V) , each control signal s tarts on the falling edge of the MCLK and frame scan is performed during the high period of the MSP. Parameter Symbol Min. Typ. Max. Unit Clock pulse rise/fall times tr(MCLK) 01 0 12 n stf(MCLK) Clock pulse width tpw(MCLK) 10 - - ns Start pulse rise/fall times tr(MSP) 01 0 1 2 n stf(MSP) Start pulse width*3 tpw(MSP) 0.001 - 10 ms Start (rise) timing*4 t1 10 - - ns Start (fall) timing*4 t2 10 - - ns Output setting time t3 - - 50 ns *3: Integration time max.=10 ms *4: If the sensor is driven with these timings set shorter than the Min. value, then the operation may delay by 1 MCLK pulse.

InGaAs area image sensor G11097-0606S Spectral response Photosensitivity temperature characteristics Photosensitivity (A/W) Wavelength (μm) 1.0 0.8 0.6 0.4 0.2 (Ta=25 °C) Wavelength (μm) Relative sensitivity (%) 100 (Typ.) Td=60 °C Td=40 °C Td=20 °C Td=-10 °C KMIRB0051EB KMIRB0072EB Thermistor temperature characteristics Temperature (°C) Thermistor resistance (kΩ) (Typ.) 0-10 -20 20 40 60 70 503010 KMIRB0067EA Cooling characteristics of TE-cooler Current (A) Element temperature (°C) (Typ. Ta=25 °C, thermal resistance of heatsink 0.5 °C/W) -0.4 1.41.2 -10 -20 KMIRB0054ED There is the following relation between the thermistor resistance and temperature. R1: resistance at T1 °C R2: resistance at T2 °C B: B constant (B=3410 K ± 2%) Thermistor resistance=9 kΩ (at 25 °C)

InGaAs area image sensor G11097-0606S Dimensional outline (unit: mm) 9.5 ± 0.2 Position accuracy of photosensitive area center with respect to cap center -0.5≤X≤+0.5 -0.5≤Y≤+0.5 Package material: kovar metal Window material: borosilicate glass with anti-reflective coating Window sealing method: hermetic 5.7 ± 0.2 1.9 ± 0.2 Window ϕ10.0 ± 0.2 ϕ14.0 ± 0.2 ϕ15.3 ± 0.2 4.8 ± 0.3 10.0 ± 0.223 ± 1ϕ0.45 Lead Photosensitive area 64 ch1 ch 4096 ch KMIRA0021EB Current vs. voltage (TE-cooler) Voltage (V) Current (A) (Typ. Ta=25 °C, thermal resistance of heatsink 0.5 °C/W) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 KMIRB0055ED

InGaAs area image sensor G11097-0606S Pin connections Pin no. Name Input/Output Function Remark

1 Vss Input 0 V ground 0 V

2 Vdd Input +

5 V supply voltage 5 V

3 MCLK Input C

lock pulse for timing generator Falling synchronous pulse

4 AD_TRIG Output Signal f

or A/D sampling Falling synchronous pulse

5 MSP Input C

lock pulse for fl ame s can start 6N C - - 7N C - -

8 Vdd Input +5 V su pply voltage 5 V

9 PD_bias Input Photodiode bias voltage 4.5 V

10 Vb1 Output Pi

xel bias voltage 1.27 V

11 NC - -

12 VIDEO Output V

ideo output 1.3 to 3.3 V

13 TE (-) Input T

E-cooler (-)

14 THERM Output Ther

15 THERM Output Ther

16 TE (+) Input T

E-cooler (+) * Do not connect anything to the NC terminals. Note: Connect a bypass capacitor of 0.1 μ F to the Vb1 terminal.

InGaAs area image sensor G11097-0606S Cat. No. KMIR1016E05 Jun. 2014 DN www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. Information described in this material is current as of June, 2014. Precautions (1) Electrostatic countermeasures This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. Also protect th is de- vice from surge voltages which might be caused by peripheral equipment. (2) Incident window If dust or dirt gets on the light incident window, it will show up as black blemishes on the image. When cleaning, avoid rubbin g the window surface with dry cloth or dry cotton swab, since doing so may generate static electricity. Use soft cloth, paper or a cotton swab moistened with alcohol to wipe dust and dirt off the window surface. Then blow compressed air onto the window surface so that n o spot or stain remains. (3) Soldering To prevent damaging the device during soldering, take precautions to prevent excessive soldering temperatures and times. Solder ing should be performed within 5 seconds at a soldering temperature below 260 °C. (4) Operating and storage environments Handle the device within the temperature range specifi ed in the absolute maximum ratings. Operating or storing the device at an exces- sively high temperature and humidity may cause variations in performance characteristics and must be avoided. Related information ∙ Notice ∙ Image sensors/Precautions Precautions www.hamamatsu.com/sp/ssd/doc_en.html