G10899

G10899 HAMAMATSU | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 4

Technical content

Wide spectral response range (0.5 to 1.7 μm) G10899 series www.hamamatsu.com The G10899 series is an InGaAs PIN photodiode that covers a wide spectral response range from 0.5 μm to 1.7 μm. While stan- dard InGaAs PIN photodiodes have spectral response ranging from 0.9 μm to 1.7 μm, the G10899 series has sensitivity extending to 0.5 μm on the shorter wavelength side. A wide range of spectrum can be detected with a single detector. The G10899 series also features low noise and low dark current. Features Applications SpectroanalysisWide spectral response range ThermometerLow noise, low dark current Large active area available Specifi cations / absolute maximum ratings Electrical and optical characteristics (Ta=25 °C) The G10899 series may be damaged by electrostatic discharge, etc. Be careful when using the G10899 series. Type no. Window material Package Active area (mm) Absolute maximum ratings Reverse voltage VR (V) Forward current If (mA) Operating temperature Topr (°C) Storage temperature Tstg (°C) G10899-003K Borosilicate glass TO-18 φ0.3 10 -40 to +85 -55 to +125 G10899-005K φ0.5 G10899-01K φ1 G10899-02K TO-5 φ2 2G10899-03K φ3 Type no. Spectral response range λ Peak sensitivity wavelength λp Photo sensitivity S Dark current ID VR=1 V Cut-off frequency fc VR=1 V RL=50 Ω Terminal capacitance Ct VR=1 V f=1 MHz Shunt resistance Rsh VR=10 mV λ=λp NEP λ=λp λ=0.65 μm λ=0.85 μm λ=1.3 μm λ=λp Min. (A/W) Typ. (A/W) Min. (A/W) Typ. (A/W) Min. (A/W) Typ. (A/W) Min. (A/W) Typ. (A/W) Typ. (nA) Max. (nA)(μm) ( μm) (MHz) (pF) (MΩ) (cm・Hz1/2/W) (W/Hz1/2) G10899-003K 0.3 1.5 300 10 1000 5 × 1012 5 × 10-15 G10899-005K 0.5 2.5 150 20 300 9 × 10-15 G10899-01K 1 5 45 70 100 2 × 10-14 G10899-02K 5 25 10 300 25 4 × 10-14 G10899-03K 15 75 5 600 10 6 × 10-14

InGaAs PIN photodiodes G10899 series Spectral response Dark current vs. reverse voltage Photo sensitivity temperature characteristic Terminal capacitance vs. reverse voltage Wavelength (µm) (Typ. Ta=25 °C) Photo sensitivity (A/W) 0.2 0.4 1.2 1.0 0.8 0.6 1.2 1.4 1.6 1.8 G10899 series Si photodiode S1337-BR Si photodiode S1337-BQ InGaAs PIN photodiode (standard type) Dark current Reverse voltage (V) (Typ. Ta=25 °C) 100 nA 0.01 0.1 10 nA 100 pA 1 pA 10 pA 1 nA 1 µA 1 10 100 G10899-005K G10899-003K G10899-02K G10899-01K G10899-03K Wavelength (µm) Temperature coefficient (%/°C) (Typ. Ta=25 °C) 0.8 1.0 1.4 1.5 0.5 -0.5 Reverse voltage (V) Terminal capacitance 0.01 0.1 1 100 10 1 pF (Typ. Ta=25 °C, f=1 MHz) 100 pF 10 nF 10 pF 1 nF G10899-03K G10899-01K G10899-003K G10899-005K G10899-02K KIRDB0408EA KIRDB0414EC KIRDB0409EA KIRDB0410EC

InGaAs PIN photodiodes G10899 series Shunt resistance vs. ambient temperature Shunt resistance Ambient temperature (°C) 1 GΩ -40 -20 0 40 60 100 MΩ 1 MΩ 100 kΩ 10 MΩ 10 GΩ 100 GΩ 1 TΩ 20 80 100 G10899-01K G10899-005K G10899-003K G10899-03K G10899-02K (Typ.) KIRDB0411EC KIRDA0150EA Dimensional outlines (unit: mm) G10899-003K/-005K/-01K Window 3.0 ± 0.1 4.7 ± 0.1 2.7 ± 0.2 3.6 ± 0.213 Min. 5.4 ± 0.2 0.45 lead Case 2.5 ± 0.2 Photosensitive surface

InGaAs PIN photodiodes G10899 series Cat. No. KIRD1109E02 Jun. 2010 DN www.hamamatsu.com Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. Type numbers of products listed in the specification sheets or supplied as samples may have a suffix “(X)” which means tentative specifications or a suffix “(Z)” which means developmental specifications. ©2010 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 KIRDA0151EA G10899-02K/-03K Window 5.9 ± 0.1 2.5 ± 0.2 0.15 Max. 0.4 Max. 8.1 ± 0.1 9.2 ± 0.2 4.2 ± 0.218 Min. 0.45 lead Case 5.1 ± 0.3 1.5 Max. Photosensitive surface