FX50SMJ-2

FX50SMJ-2 POWEREX | Alldatasheet

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Technical content

Notice: This is not a final specification. Some parametric limits are subject to change. Jan.1999 FX50SMJ-2 OUTLINE DRAWING Dimensions in mm TO-3P APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. –100 ±20 –50 –200 –50 –50 –200 150 –55 ~ +150 –55 ~ +150 4.8 V GS = 0V VDS = 0V L = 30µH Typical value Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight V V A A A A A W g VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Symbol MAXIMUM RATINGS (Tc = 25°C) Parameter Conditions Ratings Unit

• 4V DRIVE 15.9 max 4.5 1.5 φ 3.2 5.0 20.019.5 min 1.0 5.45 4.4 0.6 2.85.45 G GATE DRAIN SOURCE DRAIN MITSUBISHI Pch POWER MOSFET FX50SMJ-2 HIGH-SPEED SWITCHING USE

Notice: This is not a final specification. Some parametric limits are subject to change. Jan.1999 V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs C iss C oss C rss td (on) tr td (off) tf VSD R th (ch-c) trr V µA mA V m Ω m Ω V S pF pF pF ns ns ns ns V °C/W ns –100 –1.0 –1.5 –0.98 49.2 11130 896 480 118 828 380 –1.0 100 ±0.1 –0.1 –2.0 –1.25 –1.5 0.83 ELECTRICAL CHARACTERISTICS (Tch = 25°C) Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Symbol UnitParameter Test conditions Limits Min. Typ. Max. ID = –1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = –100V, VGS = 0V ID = –1mA, VDS = –10V ID = –25A, VGS = –10V ID = –25A, VGS = –4V ID = –25A, VGS = –10V ID = –25A, VDS = –10V VDS = –10V, VGS = 0V, f = 1MHz VDD = –50V, ID = –25A, VGS = –10V, RGEN = RGS = 50Ω IS = –25A, VGS = 0V Channel to case I S = –50A, dis/dt = 100A/µs PERFORMANCE CURVES 100 150 200 250 0 200 50 100 150 –101 –100 –102 tw = 10µs TC = 25°C Single Pulse 100µs 10ms 1ms DC –20 –40 –60 –80 –100 PD = 150W VGS = –10V Tc = 25°C Pulse Test –8V –6V –5V –3V –4V –10 –20 –30 –40 –50 –5V –4V –6V –8V –3V PD = 150W VGS = –10V Tc = 25°C Pulse Test POWER DISSIPATION DERATING CURVE CASE TEMPERATURE T C (°C) POWER DISSIPATION P D (W) MAXIMUM SAFE OPERATING AREA DRAIN-SOURCE VOLTAGE V DS (V) DRAIN CURRENT ID (A) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE V DS (V) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE V DS (V) MITSUBISHI Pch POWER MOSFET FX50SMJ-2 HIGH-SPEED SWITCHING USE

Notice: This is not a final specification. Some parametric limits are subject to change. Jan.1999 –10 ID = –100A Tc = 25°C Pulse Test –50A –25A 100 101 102

7 TC =

25°C 75°C 125°C VDS = –10V Pulse Test 100 VGS = –4V Tc = 25°C Pulse Test –10V –20 –40 –60 –80 –100 Tc = 25°C VDS = –10V Pulse Test 103 104 Ciss Coss Crss Tch = 25°C VGS = 0V f = 1MHZ 102 103 td(on) tr td(off) tf Tch = 25°C VGS = –10V VDD = –50V R GEN = RGS = 50Ω ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) GATE-SOURCE VOLTAGE V GS (V) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ ) TRANSFER CHARACTERISTICS (TYPICAL) GATE-SOURCE VOLTAGE V GS (V) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) SWITCHING CHARACTERISTICS (TYPICAL) DRAIN-SOURCE VOLTAGE V DS (V) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) DRAIN CURRENT ID (A) CAPACITANCE Ciss, Coss, Crss (pF) SWITCHING TIME (ns) MITSUBISHI Pch POWER MOSFET FX50SMJ-2 HIGH-SPEED SWITCHING USE

Notice: This is not a final specification. Some parametric limits are subject to change. Jan.1999 10–2 10–1 100 101 10–423 57 23 57 23 57 23 57 100 23 57 101 23 57 10210–3 10–2 10–1 PDM tw D = T tw T D = 1.0 0.5 0.2 0.1 0.02 0.05 0.01 Single Pulse –10 0 40 80 120 160 200 VDS = –20V –40V –80V Tch = 25°C I D = –50A –20 –40 –60 –80 –100 TC = 25°C 75°C 125°C VGS = 0V Pulse Test 10–1 100 101 –50 0 50 100 150 VGS = –10V ID = 1/2ID Pulse Test –0.8 –1.6 –2.4 –3.2 –4.0 –50 0 50 100 150 VDS = –10V ID = –1mA 0.4 0.6 0.8 1.0 1.2 1.4 –50 0 50 100 150 VGS = 0V ID = –1mA GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) GATE CHARGE Q g (nC) GATE-SOURCE VOLTAGE V GS (V) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) SOURCE-DRAIN VOLTAGE V SD (V) SOURCE CURRENT I S (A) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE ON-STATE RESISTANCE r DS (ON) (t°C) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS CHANNEL TEMPERATURE Tch (°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) PULSE WIDTH tw (s) TRANSIENT THERMAL IMPEDANCE Z th (ch–c) (°C/W) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) DRAIN-SOURCE ON-STATE RESISTANCE r DS (ON) (25°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) MITSUBISHI Pch POWER MOSFET FX50SMJ-2 HIGH-SPEED SWITCHING USE