FX50KMJ-06

FX50KMJ-06 POWEREX | Alldatasheet

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Technical content

Notice: This is not a final specification. Some parametric limits are subject to change. Jan.1999

• 4V DRIVE FX50KMJ-06 TO-220FN V V A A A A A W V g –60 ±20 –50 –200 –50 –50 –200 –55 ~ +150 –55 ~ +150 2000 2.0 V GS = 0V VDS = 0V L = 50µH AC for 1minute, Terminal to case Typical value VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Viso 15 ± 0.314 ± 0.5 10 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 2.6 ± 0.2 4.5 ± 0.2 0.75 ± 0.15 3 ± 0.33.6 ± 0.3 6.5 ± 0.3 E GATE DRAIN SOURCE APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. OUTLINE DRAWING Dimensions in mm Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight Symbol MAXIMUM RATINGS (Tc = 25°C) Parameter Conditions Ratings Unit MITSUBISHI Pch POWER MOSFET FX50KMJ-06 HIGH-SPEED SWITCHING USE

Notice: This is not a final specification. Some parametric limits are subject to change. Jan.1999 V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs C iss C oss C rss td (on) tr td (off) tf VSD R th (ch-c) trr V µA mA V m Ω m Ω V S pF pF pF ns ns ns ns V °C/W ns –60 –1.3 –1.8 15.0 –0.38 11610 1355 687 137 822 320 –1.0 ±0.1 –0.1 –2.3 18.9 –0.47 –1.5 3.57 ELECTRICAL CHARACTERISTICS (Tch = 25°C) Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Symbol UnitParameter Test conditions Limits Min. Typ. Max. PERFORMANCE CURVES ID = –1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = –60V, VGS = 0V ID = –1mA, VDS = –10V ID = –25A, VGS = –10V ID = –25A, VGS = –4V ID = –25A, VGS = –10V ID = –25A, VDS = –10V VDS = –10V, VGS = 0V, f = 1MHz VDD = –30V, ID = –25A, VGS = –10V, RGEN = RGS = 50Ω IS = –25A, VGS = 0V Channel to case I S = –50A, dis/dt = 100A/µs 0 200 50 100 150 –20 –40 –60 –80 –100 PD = 35W VGS = –10V Tc = 25°C Pulse Test –6V –3V –4V –5V –8V –10 –20 –30 –40 –50 –6V –5V –4V –3V –8V –10V VGS = Tc = 25°C Pulse Test –100 –101 –102 tw = TC = 25°C Single Pulse 100µs 10ms 100ms 1ms DC 10µs PD = 35W POWER DISSIPATION DERATING CURVE CASE TEMPERATURE T C (°C) POWER DISSIPATION P D (W) MAXIMUM SAFE OPERATING AREA DRAIN-SOURCE VOLTAGE V DS (V) DRAIN CURRENT ID (A) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE V DS (V) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE V DS (V) MITSUBISHI Pch POWER MOSFET FX50KMJ-06 HIGH-SPEED SWITCHING USE

Notice: This is not a final specification. Some parametric limits are subject to change. Jan.1999 100 101 102 25°C TC = 75°C 125°C VDS = –10V Pulse Test –20 –40 –60 –80 –100 Tc = 25°C VDS = –10V Pulse Test –1.0 –2.0 –3.0 –4.0 –5.0 ID = –50A –25A –100A Tc = 25°C Pulse Test 103 104 105 Ciss Coss Crss Tch = 25°C f = 1MHZ VGS = 0V VGS = –4V Tc = 25°C Pulse Test –10V 101 102 103 Tch = 25°C VGS = –10V VDD = –30V R GEN = RGS = 50Ω td(off) td(on) tr tf ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) GATE-SOURCE VOLTAGE V GS (V) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ ) TRANSFER CHARACTERISTICS (TYPICAL) GATE-SOURCE VOLTAGE V GS (V) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) SWITCHING CHARACTERISTICS (TYPICAL) DRAIN-SOURCE VOLTAGE V DS (V) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) DRAIN CURRENT ID (A) CAPACITANCE Ciss, Coss, Crss (pF) SWITCHING TIME (ns) MITSUBISHI Pch POWER MOSFET FX50KMJ-06 HIGH-SPEED SWITCHING USE

Notice: This is not a final specification. Some parametric limits are subject to change. Jan.1999 –10 0 40 80 120 160 200 –10V VDS = –20V –40V Tch = 25°C ID = –50A –20 –40 –60 –80 –100 125°C TC = 75°C 25°C VGS = 0V Pulse Test 10–1 100 101 –50 0 50 100 150 VGS = –10V ID = 1/2ID Pulse Test –0.8 –1.6 –2.4 –3.2 –4.0 –50 0 50 100 150 VDS = –10V ID = –1mA 0.4 0.6 0.8 1.0 1.2 1.4 –50 0 50 100 150 VGS = 0V ID = –1mA 10–2 10–1 100 101 10–423 57 23 57 23 57 23 57 100 23 57 101 23 57 10210–3 10–2 10–1 PDM tw D = T tw T D = 1.0 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) GATE CHARGE Q g (nC) GATE-SOURCE VOLTAGE V GS (V) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) SOURCE-DRAIN VOLTAGE V SD (V) SOURCE CURRENT I S (A) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE ON-STATE RESISTANCE r DS (ON) (t°C) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS CHANNEL TEMPERATURE Tch (°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) PULSE WIDTH tw (s) TRANSIENT THERMAL IMPEDANCE Z th (ch–c) (°C/W) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) DRAIN-SOURCE ON-STATE RESISTANCE r DS (ON) (25°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) MITSUBISHI Pch POWER MOSFET FX50KMJ-06 HIGH-SPEED SWITCHING USE