FX30SMJ-3

FX30SMJ-3 POWEREX | Alldatasheet

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Notice: This is not a final specification. Some parametric limits are subject to change. Jan.1999 FX30SMJ-3 OUTLINE DRAWING Dimensions in mm T0-3P MITSUBISHI Pch POWER MOSFET FX30SMJ-3 HIGH-SPEED SWITCHING USE APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. 15.9 max 4.5 1.5 φ 3.2 5.0 20.019.5 min 1.0 5.45 4.4 0.6 2.85.45 G GATE DRAIN SOURCE DRAIN –150 ±20 –30 –120 –30 –30 –120 150 –55 ~ +150 –55 ~ +150 4.8 V GS = 0V VDS = 0V L = 30µH Typical value Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight V V A A A A A W g VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Symbol MAXIMUM RATINGS (Tc = 25°C) Parameter Conditions Ratings Unit

• 4V DRIVE

Notice: This is not a final specification. Some parametric limits are subject to change. Jan.1999 MITSUBISHI Pch POWER MOSFET FX30SMJ-3 HIGH-SPEED SWITCHING USE PERFORMANCE CURVES 120 160 200 0 200 50 100 150 –100 –101 –102 tw = 10µs 100µs 1ms 10ms DC TC = 25°C Single Pulse –12 –16 –20 –3V –2.5V VGS = –10V TC = 25°C Pulse Test–6V –4V –10 –20 –30 –40 –50 –3V –3.5V –6V VGS = –10V PD = 150W TC = 25°C Pulse Test –5V –4V POWER DISSIPATION DERATING CURVE CASE TEMPERATURE T C (°C) POWER DISSIPATION P D (W) MAXIMUM SAFE OPERATING AREA DRAIN-SOURCE VOLTAGE V DS (V) DRAIN CURRENT ID (A) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE V DS (V) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE V DS (V) V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs C iss C oss C rss td (on) tr td (off) tf VSD R th (ch-c) trr V µA mA V m Ω m Ω V S pF pF pF ns ns ns ns V °C/W ns –150 –1.0 –1.5 –1.17 41.3 11430 674 320 878 330 –1.0 100 ±0.1 –0.1 –2.0 100 111 –1.50 –1.5 0.83 ID = –1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = –150V, VGS = 0V ID = –1mA, VDS = –10V ID = –15A, VGS = –10V ID = –15A, VGS = –4V ID = –15A, VGS = –10V ID = –15A, VDS = –10V VDS = –10V, VGS = 0V, f = 1MHz VDD = –80V, ID = –15A, VGS = –10V, RGEN = RGS = 50Ω IS = –15A, VGS = 0V Channel to case I S = –30A, dis/dt = 100A/µs ELECTRICAL CHARACTERISTICS (Tch = 25°C) Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Symbol UnitParameter Test conditions Limits Min. Typ. Max.

Notice: This is not a final specification. Some parametric limits are subject to change. Jan.1999 MITSUBISHI Pch POWER MOSFET FX30SMJ-3 HIGH-SPEED SWITCHING USE –10 –20 –30 –40 –50 TC = 25°C VDS = –10V Pulse Test 103 102 104 105 Ciss Coss Crss TC h = 25°C f = 1MHZ VGS = 0V 120 160 200 VGS = –4V –10V TC = 25°C Pulse Test 100 101 102 TC = 25°C 125°C 75°C VDS = –10V Pulse Test 102 103 td(off) td(on) tf tr TC h = 25°C VDD = –80V VGS = –10V R GEN = RGS = 50Ω –10 –30A –15A ID = –45A TC = 25°C Pulse Test ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) GATE-SOURCE VOLTAGE V GS (V) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ ) TRANSFER CHARACTERISTICS (TYPICAL) GATE-SOURCE VOLTAGE V GS (V) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) SWITCHING CHARACTERISTICS (TYPICAL) DRAIN-SOURCE VOLTAGE V DS (V) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) DRAIN CURRENT ID (A) CAPACITANCE Ciss, Coss, Crss (pF) SWITCHING TIME (ns)

Notice: This is not a final specification. Some parametric limits are subject to change. Jan.1999 MITSUBISHI Pch POWER MOSFET FX30SMJ-3 HIGH-SPEED SWITCHING USE –10 0 40 80 120 160 200 VDS = –50V –80V –100V TC h = 25°C ID = –30A 0.4 0.6 0.8 1.0 1.2 1.4 –50 0 50 100 150 VGS = 0V ID = –1mA –0.8 –1.6 –2.4 –3.2 –4.0 –50 0 50 100 150 VDS = –10V ID = –1mA 10–1 100 101 –50 0 50 100 150 VGS = –10V ID = 1/2ID Pulse Test –10 –20 –30 –40 –50 TC = 125°C 75°C 25°C VGS = 0V Pulse Test 10–2 10–1 100 101 10–423 57 23 57 23 57 23 57 100 23 57 101 23 57 10210–3 10–2 10–1 PDM tw D = T tw T D = 1.0 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) GATE CHARGE Q g (nC) GATE-SOURCE VOLTAGE V GS (V) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) SOURCE-DRAIN VOLTAGE V SD (V) SOURCE CURRENT I S (A) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE ON-STATE RESISTANCE r DS (ON) (t°C) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS CHANNEL TEMPERATURE Tch (°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) PULSE WIDTH tw (s) TRANSIENT THERMAL IMPEDANCE Z th (ch–c) (°C/W) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) DRAIN-SOURCE ON-STATE RESISTANCE r DS (ON) (25°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)