FX30KMJ-2

FX30KMJ-2 POWEREX | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 4

Technical content

Notice: This is not a final specification. Some parametric limits are subject to change. Jan.1999

• 4V DRIVE FX30KMJ-2 TO-220FN V V A A A A A W V g –100 ±20 –30 –120 –30 –30 –120 –55 ~ +150 –55 ~ +150 2000 2.0 V GS = 0V VDS = 0V L = 30µH AC for 1minute, Terminal to case Typical value VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Viso 15 ± 0.314 ± 0.5 10 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 2.6 ± 0.2 4.5 ± 0.2 0.75 ± 0.15 3 ± 0.33.6 ± 0.3 6.5 ± 0.3 E GATE DRAIN SOURCE OUTLINE DRAWING Dimensions in mm APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight Symbol MAXIMUM RATINGS (Tc = 25°C) Parameter Conditions Ratings Unit MITSUBISHI Pch POWER MOSFET FX30KMJ-2 HIGH-SPEED SWITCHING USE

Notice: This is not a final specification. Some parametric limits are subject to change. Jan.1999 V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs C iss C oss C rss td (on) tr td (off) tf VSD R th (ch-c) trr V µA mA V Ω Ω V S pF pF pF ns ns ns ns V °C/W ns –100 –1.0 –1.5 0.113 0.135 –1.65 4450 330 170 270 129 –1.0 100 ±0.1 –0.1 –2.0 0.143 0.176 –2.15 –1.5 4.17 ELECTRICAL CHARACTERISTICS (Tch = 25°C) Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Symbol UnitParameter Test conditions Limits Min. Typ. Max. PERFORMANCE CURVES ID = –1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = –100V, VGS = 0V ID = –1mA, VDS = –10V ID = –15A, VGS = –10V ID = –15A, VGS = –4V ID = –15A, VGS = –10V ID = –15A, VDS = –10V VDS = –10V, VGS = 0V, f = 1MHz VDD = –50V, ID = –15A, VGS = –10V, RGEN = RGS = 50Ω IS = –15A, VGS = 0V Channel to case I S = –30A, dis/dt = 100A/µs 0 200 50 100 150 –101 –100 –102 tw = 10µs TC = 25°C Single Pulse 100µs 10ms 100ms 1ms DC –10 –20 –30 –40 –50 PD = 30W VGS = –10V Tc = 25°C Pulse Test –8V –6V –5V –3V –4V –12 –16 –20 –4V –6V –3V PD = 30W –2.5V VGS = –10V Tc = 25°C Pulse Test POWER DISSIPATION DERATING CURVE CASE TEMPERATURE T C (°C) POWER DISSIPATION P D (W) MAXIMUM SAFE OPERATING AREA DRAIN-SOURCE VOLTAGE V DS (V) DRAIN CURRENT ID (A) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE V DS (V) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE V DS (V) MITSUBISHI Pch POWER MOSFET FX30KMJ-2 HIGH-SPEED SWITCHING USE

Notice: This is not a final specification. Some parametric limits are subject to change. Jan.1999 100 101 102 TC = 25°C 75°C 125°C VDS = –10V Pulse Test 120 160 200 VGS = –4V Tc = 25°C Pulse Test –10V –10 –20 –30 –40 –50 Tc = 25°C VDS = –10V Pulse Test –12 –16 –20 ID = –50A Tc = 25°C Pulse Test –30A –15A 102 103 104 Ciss Coss Crss Tch = 25°C VGS = 0V f = 1MHZ 101 102 103 td(off) td(on) tr Tch = 25°C VGS = –10V VDD = –50V R GEN = RGS = 50Ω tf ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) GATE-SOURCE VOLTAGE V GS (V) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ ) TRANSFER CHARACTERISTICS (TYPICAL) GATE-SOURCE VOLTAGE V GS (V) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) SWITCHING CHARACTERISTICS (TYPICAL) DRAIN-SOURCE VOLTAGE V DS (V) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) DRAIN CURRENT ID (A) CAPACITANCE Ciss, Coss, Crss (pF) SWITCHING TIME (ns) MITSUBISHI Pch POWER MOSFET FX30KMJ-2 HIGH-SPEED SWITCHING USE

Notice: This is not a final specification. Some parametric limits are subject to change. Jan.1999 –10 0 2 04 06 08 0 1 0 0 VDS = –20V –40V –80V Tch = 25°C I D = –30A –10 –20 –30 –40 –50 TC = 25°C 75°C 125°C VGS = 0V Pulse Test 10–1 100 101 –50 0 50 100 150 VGS = –10V ID = 1/2ID Pulse Test –0.8 –1.6 –2.4 –3.2 –4.0 –50 0 50 100 150 VDS = –10V ID = –1mA 0.4 0.6 0.8 1.0 1.2 1.4 –50 0 50 100 150 VGS = 0V ID = –1mA 10–2 10–1 100 101 10–423 57 23 57 23 57 23 57 100 23 57 101 23 57 10210–3 10–2 10–1 PDM tw D = T tw T D = 1.0 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) GATE CHARGE Q g (nC) GATE-SOURCE VOLTAGE V GS (V) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) SOURCE-DRAIN VOLTAGE V SD (V) SOURCE CURRENT I S (A) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE ON-STATE RESISTANCE r DS (ON) (t°C) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS CHANNEL TEMPERATURE Tch (°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) PULSE WIDTH tw (s) TRANSIENT THERMAL IMPEDANCE Z th (ch–c) (°C/W) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) DRAIN-SOURCE ON-STATE RESISTANCE r DS (ON) (25°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) MITSUBISHI Pch POWER MOSFET FX30KMJ-2 HIGH-SPEED SWITCHING USE