FX20KMJ-2

FX20KMJ-2 POWEREX | Alldatasheet

Document overview

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Technical content

Notice: This is not a final specification. Some parametric limits are subject to change. Jan.1999

• 4V DRIVE FX20KMJ-2 TO-220FN V V A A A A A W V g –100 ±20 –20 –80 –20 –20 –80 –55 ~ +150 –55 ~ +150 2000 2.0 V GS = 0V VDS = 0V L = 50µH AC for 1minute, Terminal to case Typical value VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Viso 15 ± 0.314 ± 0.5 10 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 2.6 ± 0.2 4.5 ± 0.2 0.75 ± 0.15 3 ± 0.33.6 ± 0.3 6.5 ± 0.3 E GATE DRAIN SOURCE OUTLINE DRAWING Dimensions in mm APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight Symbol MAXIMUM RATINGS (Tc = 25°C) Parameter Conditions Ratings Unit MITSUBISHI Pch POWER MOSFET FX20KMJ-2 HIGH-SPEED SWITCHING USE

Notice: This is not a final specification. Some parametric limits are subject to change. Jan.1999 V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs C iss C oss C rss td (on) tr td (off) tf VSD R th (ch-c) trr V µA mA V Ω Ω V S pF pF pF ns ns ns ns V °C/W ns –100 –1.0 –1.5 0.20 0.25 –2.0 10.3 2360 198 139 –1.0 100 ±0.1 –0.1 –2.0 0.26 0.32 –2.6 –1.5 5.00 ELECTRICAL CHARACTERISTICS (Tch = 25°C) Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Symbol UnitParameter Test conditions Limits Min. Typ. Max. PERFORMANCE CURVES ID = –1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = –100V, VGS = 0V ID = –1mA, VDS = –10V ID = –10A, VGS = –10V ID = –10A, VGS = –4V ID = –10A, VGS = –10V ID = –10A, VDS = –10V VDS = –10V, VGS = 0V, f = 1MHz VDD = –50V, ID = –10A, VGS = –10V, RGEN = RGS = 50Ω IS = –10A, VGS = 0V Channel to case I S = –20A, dis/dt = 100A/µs 0 200 50 100 150 –10 –20 –30 –40 –50 PD = 25W VGS = –10V Tc = 25°C Pulse Test –6V –4V –3V –5V –8V –12 –16 –20 –4V –3V Tc = 25°C Pulse Test –100 –101 –102 tw = TC = 25°C Single Pulse 100µs10ms 1ms DC 10µs –5V –6V –10V VGS = PD = 25W POWER DISSIPATION DERATING CURVE CASE TEMPERATURE T C (°C) POWER DISSIPATION P D (W) MAXIMUM SAFE OPERATING AREA DRAIN-SOURCE VOLTAGE V DS (V) DRAIN CURRENT ID (A) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE V DS (V) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE V DS (V) MITSUBISHI Pch POWER MOSFET FX20KMJ-2 HIGH-SPEED SWITCHING USE

Notice: This is not a final specification. Some parametric limits are subject to change. Jan.1999 –10 –20 –30 –40 –50 ID = –40A –20A –10A Tc = 25°C Pulse Test –10 –20 –30 –40 –50 Tc = 25°C VDS = –10V Pulse Test 101 102 Tch = 25°C VGS = –10V VDD = –50V R GEN = RGS = 50Ω td(off) td(on) tr tf 102 103 Ciss Crss Coss Tch = 25°C f = 1MHZ VGS = 0V 0.1 0.2 0.3 0.4 0.5 VGS = –4V Tc = 25°C Pulse Test –10V 100 101 TC = 25°C 75°C 125°C VDS = –10V Pulse Test ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) GATE-SOURCE VOLTAGE V GS (V) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω ) TRANSFER CHARACTERISTICS (TYPICAL) GATE-SOURCE VOLTAGE V GS (V) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) SWITCHING CHARACTERISTICS (TYPICAL) DRAIN-SOURCE VOLTAGE V DS (V) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) DRAIN CURRENT ID (A) CAPACITANCE Ciss, Coss, Crss (pF) SWITCHING TIME (ns) MITSUBISHI Pch POWER MOSFET FX20KMJ-2 HIGH-SPEED SWITCHING USE

Notice: This is not a final specification. Some parametric limits are subject to change. Jan.1999 10–2 10–1 100 101 10–423 57 23 57 23 57 23 57 100 23 57 101 23 57 10210–3 10–2 10–1 PDM tw D = T tw T D = 1.0 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse –10 0 1 02 03 04 05 0 –20V VDS = –50V –80V Tch = 25°C ID = –20A –10 –20 –30 –40 –50 TC = 75°C 25°C VGS = 0V Pulse Test 10–1 100 101 –50 0 50 100 150 VGS = –10V ID = 1/2ID Pulse Test –0.8 –1.6 –2.4 –3.2 –4.0 –50 0 50 100 150 VDS = –10V ID = –1mA 0.4 0.6 0.8 1.0 1.2 1.4 –50 0 50 100 150 VGS = 0V ID = –1mA 125°C GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) GATE CHARGE Q g (nC) GATE-SOURCE VOLTAGE V GS (V) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) SOURCE-DRAIN VOLTAGE V SD (V) SOURCE CURRENT I S (A) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE ON-STATE RESISTANCE r DS (ON) (t°C) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS CHANNEL TEMPERATURE Tch (°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) PULSE WIDTH tw (s) TRANSIENT THERMAL IMPEDANCE Z th (ch–c) (°C/W) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) DRAIN-SOURCE ON-STATE RESISTANCE r DS (ON) (25°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) MITSUBISHI Pch POWER MOSFET FX20KMJ-2 HIGH-SPEED SWITCHING USE