FS70SMJ-06 POWEREX | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Feb.1999 FS70SMJ-06 OUTLINE DRAWING Dimensions in mm TO-3P MITSUBISHI Nch POWER MOSFET FS70SMJ-06 HIGH-SPEED SWITCHING USE APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. V V A A A A A W g ±20 280 280 150 –55 ~ +150 –55 ~ +150 4.8 VGS = 0V VDS = 0V L = 100µH Typical value Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Symbol MAXIMUM RATINGS (T c = 25°C) Parameter Conditions Ratings Unit \` 4V DRIVE 15.9MAX. 4.5 1.5 f 3.2 5.0 20.019.5MIN. 1.0 5.45 4.4 0.6 2.8 qwe 5.45 r G q GATE w DRAIN e SOURCE r DRAIN wr q e

Feb.1999 V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs C iss C oss C rss td (on) tr td (off) tf VSD R th (ch-c) trr MITSUBISHI Nch POWER MOSFET FS70SMJ-06 HIGH-SPEED SWITCHING USE V µA mA V m Ω m Ω V S pF pF pF ns ns ns ns V °C/W ns 1.0 1.5 5.4 6.5 0.19 8200 1600 860 150 800 380 1.0 ±0.1 0.1 2.0 7.0 8.4 0.25 1.5 0.83 ELECTRICAL CHARACTERISTICS (T ch = 25°C) Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Symbol UnitParameter Test conditions Limits Min. Typ. Max. ID = 1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = 60V, VGS = 0V ID = 1mA, VDS = 10V ID = 35A, VGS = 10V ID = 35A, VGS = 4V ID = 35A, VGS = 10V ID = 35A, VDS = 10V VDS = 10V, VGS = 0V , f = 1MHz VDD = 30V, ID = 35A, VGS = 10V, RGEN = RGS = 50Ω IS = 35A, VGS = 0V Channel to case IS = 70A, dis/dt = –100A/µs PERFORMANCE CURVES 120 160 200 0 200 50 100 150 100 101 102 100 21 0 135 735 7 2 1 0 235 7 2 3 TC = 25°C Single Pulse tw = 10ms 100ms 1ms 10ms DC VGS = 10V TC = 25°C Pulse Test 2.5V 3.5V 100 VGS = 10V TC = 25°C Pulse Test 4V5V PD = 150W POWER DISSIPATION DERATING CURVE CASE TEMPERATURE T C (°C) POWER DISSIPATION P D (W) MAXIMUM SAFE OPERATING AREA DRAIN-SOURCE VOLTAGE V DS (V) DRAIN CURRENT ID (A) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE V DS (V) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE V DS (V)

Feb.1999 MITSUBISHI Nch POWER MOSFET FS70SMJ-06 HIGH-SPEED SWITCHING USE 100 02468 1 0 TC = 25°C VDS = 10V Pulse Test 100 10123 5 7 1 0 223 5 7100 101 102

7 TC = 25°C 75°C

125°C VDS = 10V Pulse Test 0.2 0.4 0.6 0.8 1.0 02468 1 0 ID = 100A TC = 25°C Pulse Test 70A 30A 103 104 105 100 21 0 135 735 7 2 1 0 235 7 2 32 Ciss Crss Coss Tch = 25°C f = 1MHZ VGS = 0V 100 10123 5 7 1 0 223 5 7101 102 103 7 td(off) tr Tch = 25°C VDD = 30V VGS = 10V R GEN = RGS = 50Ω tf td(on) 2.0 4.0 6.0 8.0 10.0 035 7 2 1 0 135 7 2 1 0 235 7 23 VGS = 4VTC = 25°C Pulse Test 10V ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) GATE-SOURCE VOLTAGE V GS (V) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ ) TRANSFER CHARACTERISTICS (TYPICAL) GATE-SOURCE VOLTAGE V GS (V) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) SWITCHING CHARACTERISTICS (TYPICAL) DRAIN-SOURCE VOLTAGE V DS (V) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) DRAIN CURRENT ID (A) CAPACITANCE Ciss, Coss, Crss (pF) SWITCHING TIME (ns)

Feb.1999 MITSUBISHI Nch POWER MOSFET FS70SMJ-06 HIGH-SPEED SWITCHING USE 100 TC = 125°C 75°C 25°C VGS = 0V Pulse Test 0 40 80 120 160 200 VDS = 10V 20V 40V Tch = 25°C ID = 70A 10–1 100 101 –50 0 50 100 150 VGS = 10V ID = 1/2ID Pulse Test 0.8 1.6 2.4 3.2 4.0 –50 0 50 100 150 VDS = 10V ID = 1mA 0.4 0.6 0.8 1.0 1.2 1.4 –50 0 50 100 150 VGS = 0V ID = 1mA 10–2 10–1 100 101 10–423 57 23 57 23 57 23 57 100 23 57 101 23 57 10210–3 10–2 10–1 PDM tw D = T tw T D = 1.0 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) GATE CHARGE Q g (nC) GATE-SOURCE VOLTAGE V GS (V) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) SOURCE-DRAIN VOLTAGE V SD (V) SOURCE CURRENT I S (A) CHANNEL TEMPERATURE Tch ( °C) DRAIN-SOURCE ON-STATE RESISTANCE r DS (ON) (t°C) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS CHANNEL TEMPERATURE Tch ( °C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) PULSE WIDTH tw (s) TRANSIENT THERMAL IMPEDANCE Z th (ch–c) (°C/W) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) DRAIN-SOURCE ON-STATE RESISTANCE r DS (ON) (25°C) CHANNEL TEMPERATURE Tch ( °C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)