FS50KMJ-3

FS50KMJ-3 POWEREX | Alldatasheet

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Feb.1999 FS50KMJ-3 OUTLINE DRAWING Dimensions in mm TO-220FN MITSUBISHI Nch POWER MOSFET FS50KMJ-3 HIGH-SPEED SWITCHING USE APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. 15 – 0.314 – 0.5 10 – 0.3 2.8 – 0.2 f 3.2 – 0.2 1.1 – 0.2 1.1 – 0.2 0.75 – 0.15 2.6 – 0.2 4.5 – 0.2 0.75 – 0.15 3 – 0.33.6 – 0.3 6.5 – 0.3 123 q GATE w DRAIN e SOURCE E w q e V V A A A A A W V g 150 ±20 200 200 –55 ~ +150 –55 ~ +150 2000 2.0 V GS = 0V VDS = 0V L = 100µH AC for 1minute, Terminal to case Typical value Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Viso Symbol MAXIMUM RATINGS (T c = 25°C) Parameter Conditions Ratings Unit \` 4V DRIVE

Feb.1999 V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs C iss C oss C rss td (on) tr td (off) tf VSD R th (ch-c) trr MITSUBISHI Nch POWER MOSFET FS50KMJ-3 HIGH-SPEED SWITCHING USE V µA mA V Ω Ω V S pF pF pF ns ns ns ns V °C/W ns 150 1.0 1.5 0.58 8200 870 440 110 850 340 1.0 125 ±0.1 0.1 2.0 0.75 1.5 3.57 ELECTRICAL CHARACTERISTICS (T ch = 25°C) Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Symbol UnitParameter Test conditions Limits Min. Typ. Max. ID = 1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = 150V, VGS = 0V ID = 1mA, VDS = 10V ID = 25A, VGS = 10V ID = 25A, VGS = 4V ID = 25A, VGS = 10V ID = 25A, VDS = 10V VDS = 10V, VGS = 0V , f = 1MHz VDD = 80V, ID = 25A, VGS = 10V, RGEN = RGS = 50Ω IS = 25A, VGS = 0V Channel to case IS = 50A, dis/dt = –100A/µs PERFORMANCE CURVES 0 200 50 100 150 POWER DISSIPATION DERATING CURVE CASE TEMPERATURE T C (°C) POWER DISSIPATION P D (W) MAXIMUM SAFE OPERATING AREA DRAIN-SOURCE VOLTAGE V DS (V) DRAIN CURRENT ID (A) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE V DS (V) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE V DS (V) 100 VGS = 10V TC = 25°C Pulse Test4V PD = 35W VGS = 10V TC = 25°C Pulse Test 2.5V PD = 35W 100 101 102 100 21 0 135 7 2 1 0 235 7 2 1 0 335 7 tw = 10ms 100ms 1ms 10ms DC TC = 25°C Single Pulse 100ms

Feb.1999 MITSUBISHI Nch POWER MOSFET FS50KMJ-3 HIGH-SPEED SWITCHING USE 100 02468 1 0 TC = 25°C VDS = 20V Pulse Test 0.4 0.8 1.2 1.6 2.0 02468 1 0 ID = 100A TC = 25°C Pulse Test 80A 20A 50A 035 7 2 1 0 135 7 2 1 0 235 7 23 VGS = 4V TC = 25°C Pulse Test 10V 102 103 104 100 21 0 135 735 7 2 1 0 235 7 2 32 Ciss Crss Coss Tch = 25°C f = 1MHZ VGS = 0V 101 102 103 104 100 10123 5 7 1 0 223 5 7 Tch = 25°C VDD = 80V VGS = 10V R GEN = RGS = 50Ω td(off) tf tr td(on) ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) GATE-SOURCE VOLTAGE V GS (V) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ ) TRANSFER CHARACTERISTICS (TYPICAL) GATE-SOURCE VOLTAGE V GS (V) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) SWITCHING CHARACTERISTICS (TYPICAL) DRAIN-SOURCE VOLTAGE V DS (V) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) DRAIN CURRENT ID (A) CAPACITANCE Ciss, Coss, Crss (pF) SWITCHING TIME (ns) 100 10123 4 5 7 1 0 223 4 5 7100 101 102

7 TC = 25°C 75°C

125°C VDS = 10V Pulse Test

Feb.1999 MITSUBISHI Nch POWER MOSFET FS50KMJ-3 HIGH-SPEED SWITCHING USE 0 40 80 120 160 200 VDS = 50V 80V 100V Tch = 25°C ID = 50A 10–1 100 101 –50 0 50 100 150 VGS = 10V ID = 1/2ID Pulse Test 0.8 1.6 2.4 3.2 4.0 –50 0 50 100 150 VDS = 10V ID = 1mA 0.4 0.6 0.8 1.0 1.2 1.4 –50 0 50 100 150 VGS = 0V ID = 1mA 100 TC = 125°C 75°C 25°C VGS = 0V Pulse Test 10–2 10–1 100 101 10–423 57 23 57 23 57 23 57 100 23 57 101 23 57 10210–3 10–2 10–1 PDM tw D = T tw T D = 1.0 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) GATE CHARGE Q g (nC) GATE-SOURCE VOLTAGE V GS (V) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) SOURCE-DRAIN VOLTAGE V SD (V) SOURCE CURRENT I S (A) CHANNEL TEMPERATURE Tch ( °C) DRAIN-SOURCE ON-STATE RESISTANCE r DS (ON) (t°C) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS CHANNEL TEMPERATURE Tch ( °C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) PULSE WIDTH tw (s) TRANSIENT THERMAL IMPEDANCE Z th (ch–c) (°C/W) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) DRAIN-SOURCE ON-STATE RESISTANCE r DS (ON) (25°C) CHANNEL TEMPERATURE Tch ( °C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)