FS50KMJ-06

FS50KMJ-06 POWEREX | Alldatasheet

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Feb.1999 FS50KMJ-06 OUTLINE DRAWING Dimensions in mm TO-220FN MITSUBISHI Nch POWER MOSFET FS50KMJ-06 HIGH-SPEED SWITCHING USE APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. 15 – 0.314 – 0.5 10 – 0.3 2.8 – 0.2 f 3.2 – 0.2 1.1 – 0.2 1.1 – 0.2 0.75 – 0.15 2.6 – 0.2 4.5 – 0.2 0.75 – 0.15 3 – 0.33.6 – 0.3 6.5 – 0.3 123 q GATE w DRAIN e SOURCE E w q e V V A A A A A W V g ±20 200 200 –55 ~ +150 –55 ~ +150 2000 2.0 V GS = 0V VDS = 0V L = 100µH AC for 1minute, Terminal to case Typical value Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Viso Symbol MAXIMUM RATINGS (T c = 25°C) Parameter Conditions Ratings Unit \` 4V DRIVE

Feb.1999 V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs C iss C oss C rss td (on) tr td (off) tf VSD R th (ch-c) trr MITSUBISHI Nch POWER MOSFET FS50KMJ-06 HIGH-SPEED SWITCHING USE V µA mA V m Ω m Ω V S pF pF pF ns ns ns ns V °C/W ns 1.0 1.5 0.38 3000 580 300 250 160 1.0 ±0.1 0.1 2.0 0.50 1.5 4.17 ELECTRICAL CHARACTERISTICS (T ch = 25°C) Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Symbol UnitParameter Test conditions Limits Min. Typ. Max. ID = 1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = 60V, VGS = 0V ID = 1mA, VDS = 10V ID = 25A, VGS = 10V ID = 25A, VGS = 4V ID = 25A, VGS = 10V ID = 25A, VDS = 10V VDS = 10V, VGS = 0V , f = 1MHz VDD = 30V, ID = 25A, VGS = 10V, RGEN = RGS = 50Ω IS = 25A, VGS = 0V Channel to case IS = 50A, dis/dt = –100A/µs PERFORMANCE CURVES 0 200 50 100 150 100 012345 VGS = 10V TC = 25°C Pulse Test PD = 30W 100 101 102 100 21 0 135 735 7 2 1 0 235 7 2 3 TC = 25°C Single Pulse tw = 10ms 100ms 1ms 10ms DC 100ms POWER DISSIPATION DERATING CURVE CASE TEMPERATURE T C (°C) POWER DISSIPATION P D (W) MAXIMUM SAFE OPERATING AREA DRAIN-SOURCE VOLTAGE V DS (V) DRAIN CURRENT ID (A) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE V DS (V) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE V DS (V) 5VVGS = 10V 4V TC = 25°C Pulse Test 3.5V 2.5V PD = 30W

Feb.1999 MITSUBISHI Nch POWER MOSFET FS50KMJ-06 HIGH-SPEED SWITCHING USE 100 02468 1 0 TC = 25°C VDS = 10V Pulse Test 100 10123 5 7 1 0 223 5 7100 101 102 TC = 25°C 75°C 125°C VDS = 10V Pulse Test 0.4 0.8 1.2 1.6 2.0 02468 1 0 ID = 80A TC = 25°C Pulse Test 50A 20A 035 7 2 1 0 135 7 2 1 0 235 7 23 VGS = 4V TC = 25°C Pulse Test 10V 102 103 103 100 21 0 135 735 7 2 1 0 235 7 2 32 Ciss Crss Coss Tch = 25°C f = 1MHZ VGS = 0V 100 10123 5 7 1 0 223 5 7101 102 103 td(off) tr Tch = 25°C VDD = 30V VGS = 10V R GEN = RGS = 50Ω tf td(on) ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) GATE-SOURCE VOLTAGE V GS (V) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ ) TRANSFER CHARACTERISTICS (TYPICAL) GATE-SOURCE VOLTAGE V GS (V) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) SWITCHING CHARACTERISTICS (TYPICAL) DRAIN-SOURCE VOLTAGE V DS (V) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) DRAIN CURRENT ID (A) CAPACITANCE Ciss, Coss, Crss (pF) SWITCHING TIME (ns)

Feb.1999 MITSUBISHI Nch POWER MOSFET FS50KMJ-06 HIGH-SPEED SWITCHING USE 100 TC = 125°C 75°C 25°C VGS = 0V Pulse Test 0 2 04 06 08 0 1 0 0 VDS = 10V 20V 40V Tch = 25°C ID = 50A 10–1 100 101 –50 0 50 100 150 VGS = 10V ID = 1/2ID Pulse Test 0.8 1.6 2.4 3.2 4.0 –50 0 50 100 150 VDS = 10V ID = 1mA 0.4 0.6 0.8 1.0 1.2 1.4 –50 0 50 100 150 VGS = 0V ID = 1mA 10–2 10–1 100 101 102 10–423 57 23 57 23 57 23 57 100 23 57 101 23 57 10210–3 10–2 10–1 Single Pulse 0.5 0.2 0.1 0.05 0.02 0.01 D = 1.0 PDM tw D = T tw T GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) GATE CHARGE Q g (nC) GATE-SOURCE VOLTAGE V GS (V) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) SOURCE-DRAIN VOLTAGE V SD (V) SOURCE CURRENT I S (A) CHANNEL TEMPERATURE Tch ( °C) DRAIN-SOURCE ON-STATE RESISTANCE r DS (ON) (t°C) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS CHANNEL TEMPERATURE Tch ( °C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) PULSE WIDTH tw (s) TRANSIENT THERMAL IMPEDANCE Z th (ch–c) (°C/W) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) DRAIN-SOURCE ON-STATE RESISTANCE r DS (ON) (25°C) CHANNEL TEMPERATURE Tch ( °C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)