FS50KM-3

FS50KM-3 POWEREX | Alldatasheet

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Feb.1999 TO-220FN 15 – 0.314 – 0.5 10 – 0.3 2.8 – 0.2 f 3.2 – 0.2 1.1 – 0.2 1.1 – 0.2 0.75 – 0.15 2.6 – 0.2 4.5 – 0.2 0.75 – 0.15 3 – 0.33.6 – 0.3 6.5 – 0.3 123 q GATE w DRAIN e SOURCE E w q e V V A A A A A W V g 150 ±20 200 200 –55 ~ +150 –55 ~ +150 2000 2.0 V GS = 0V VDS = 0V L = 100µH AC for 1minute, Terminal to case Typical value Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Viso Symbol MAXIMUM RATINGS (T c = 25°C) Parameter Conditions Ratings Unit FS50KM-3 OUTLINE DRAWING Dimensions in mm MITSUBISHI Nch POWER MOSFET FS50KM-3 HIGH-SPEED SWITCHING USE APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. \` 10V DRIVE

Feb.1999 MITSUBISHI Nch POWER MOSFET FS50KM-3 HIGH-SPEED SWITCHING USE PERFORMANCE CURVES 0 200 50 100 150 100 101 102 100 21 0 135 7 2 1 0 235 7 2 1 0 335 7 tw = 10ms 100ms 1ms 10ms DC TC = 25°C Single Pulse 100ms 100 VGS = 20V10V TC = 25°C Pulse Test PD = 35W VGS = 20V 10V 7V TC = 25°C Pulse Test PD = 35W POWER DISSIPATION DERATING CURVE CASE TEMPERATURE T C (°C) POWER DISSIPATION P D (W) MAXIMUM SAFE OPERATING AREA DRAIN-SOURCE VOLTAGE V DS (V) DRAIN CURRENT ID (A) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE V DS (V) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE V DS (V) ELECTRICAL CHARACTERISTICS (T ch = 25°C) V (BR) DSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs C iss C oss C rss td (on) tr td (off) tf VSD R th (ch-c) trr V µA mA V m Ω V S pF pF pF ns ns ns ns V °C/W ns 150 2.0 3.0 0.600 6540 860 360 155 380 180 1.0 130 ±0.1 0.1 4.0 0.775 1.5 3.57 Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Symbol UnitParameter Test conditions Limits Min. Typ. Max. I D = 1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = 150V, VGS = 0V ID = 1mA, VDS = 10V ID = 25A, VGS = 10V ID = 25A, VGS = 10V ID = 25A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz VDD = 80V, ID = 25A, VGS = 10V, RGEN = RGS = 50Ω IS = 25A, VGS = 0V Channel to case IS = 50A, dis/dt = –100A/µs

Feb.1999 MITSUBISHI Nch POWER MOSFET FS50KM-3 HIGH-SPEED SWITCHING USE 100 0 4 8 12 16 20 TC = 25°C VDS = 10V Pulse Test 0.4 0.8 1.2 1.6 2.0 0 4 8 12 16 20 TC = 25°C Pulse Test 80A 50A 20A ID = 100A 102 103 104 100 21 0 135 735 7 2 1 0 235 7 2 32 Tch = 25°C f = 1MHZ VGS = 0V Ciss Coss Crss 100 10123 4 5 7 1 0 223 4 5 7101 102 103 td(off) tr Tch = 25°C VDD = 80V VGS = 10V R GEN = RGS = 50Ω tf td(on) ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) GATE-SOURCE VOLTAGE V GS (V) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ ) TRANSFER CHARACTERISTICS (TYPICAL) GATE-SOURCE VOLTAGE V GS (V) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) SWITCHING CHARACTERISTICS (TYPICAL) DRAIN-SOURCE VOLTAGE V DS (V) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) DRAIN CURRENT ID (A) CAPACITANCE Ciss, Coss, Crss (pF) SWITCHING TIME (ns) 035 7 2 1 0 135 7 2 1 0 235 7 23 VGS = 10V 20V TC = 25°C Pulse Test 100 10123 4 5 7 1 0 223 4 5 7100 101 102 TC = 25°C VDS = 10V Pulse Test 75°C 125°C

Feb.1999 MITSUBISHI Nch POWER MOSFET FS50KM-3 HIGH-SPEED SWITCHING USE 100 VGS = 0V Pulse Test TC = 125°C 75°C 25°C 0 40 80 120 160 200 VDS = 50V Tch = 25°C ID = 50A 100V 80V 10–1 100 101 –50 0 50 100 150 VGS = 10V ID = 1/2ID Pulse Test 1.0 2.0 3.0 4.0 5.0 –50 0 50 100 150 VDS = 10V ID = 1mA 0.4 0.6 0.8 1.0 1.2 1.4 –50 0 50 100 150 VGS = 0V ID = 1mA GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) GATE CHARGE Q g (nC) GATE-SOURCE VOLTAGE V GS (V) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) SOURCE-DRAIN VOLTAGE V SD (V) SOURCE CURRENT I S (A) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE ON-STATE RESISTANCE r DS (ON) (t°C) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS CHANNEL TEMPERATURE Tch (°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) PULSE WIDTH tw (s) TRANSIENT THERMAL IMPEDANCE Z th (ch–c) (°C/W) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) DRAIN-SOURCE ON-STATE RESISTANCE r DS (ON) (25°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) 10–2 10–1 100 101 10–423 57 23 57 23 57 23 57 100 23 57 101 23 57 10210–3 10–2 10–1 PDM tw D = T tw T 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse D = 1.0