FS30KM-06 POWEREX | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Feb.1999 TO-220FN 15 – 0.314 – 0.5 10 – 0.3 2.8 – 0.2 f 3.2 – 0.2 1.1 – 0.2 1.1 – 0.2 0.75 – 0.15 2.6 – 0.2 4.5 – 0.2 0.75 – 0.15 3 – 0.33.6 – 0.3 6.5 – 0.3 123 q GATE w DRAIN e SOURCE E w q e V V A A A A A W V g ±20 120 120 –55 ~ +150 –55 ~ +150 2000 2.0 V GS = 0V VDS = 0V L = 100µH AC for 1minute, Terminal to case Typical value Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Viso Symbol MAXIMUM RATINGS (T c = 25°C) Parameter Conditions Ratings Unit FS30KM-06 OUTLINE DRAWING Dimensions in mm MITSUBISHI Nch POWER MOSFET FS30KM-06 HIGH-SPEED SWITCHING USE APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. \` 10V DRIVE

Feb.1999 MITSUBISHI Nch POWER MOSFET FS30KM-06 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (T ch = 25°C) 0 200 50 100 150 POWER DISSIPATION DERATING CURVE CASE TEMPERATURE T C (°C) POWER DISSIPATION P D (W) MAXIMUM SAFE OPERATING AREA DRAIN-SOURCE VOLTAGE V DS (V) DRAIN CURRENT ID (A) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE V DS (V) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE V DS (V) 100 101 102 10057 2 1 0 135 7 2 1 0 235 73 32 tw = 10ms TC = 25°C Single Pulse 100ms 10ms 1ms DC 02468 1 0 VGS = 20V TC = 25°C Pulse Test 10V PD = 25W 012345 TC = 25°C Pulse Test VGS = 20V 10V PD = 25W V (BR) DSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs C iss C oss C rss td (on) tr td (off) tf VSD R th (ch-c) trr V µA mA V m Ω V S pF pF pF ns ns ns ns V °C/W ns 2.0 3.0 0.345 1250 310 150 1.0 ±0.1 0.1 4.0 0.450 1.5 5.00 Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Symbol UnitParameter Test conditions Limits Min. Typ. Max. I D = 1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = 60V, VGS = 0V ID = 1mA, VDS = 10V ID = 15A, VGS = 10V ID = 15A, VGS = 10V ID = 15A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz VDD = 30V, ID = 15A, VGS = 10V, RGEN = RGS = 50Ω IS = 15A, VGS = 0V Channel to case IS = 30A, dis/dt = –100A/µs PERFORMANCE CURVES

Feb.1999 MITSUBISHI Nch POWER MOSFET FS30KM-06 HIGH-SPEED SWITCHING USE 100 0 4 8 12 16 20 TC = 25°C VDS = 10V Pulse Test ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) GATE-SOURCE VOLTAGE V GS (V) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ ) TRANSFER CHARACTERISTICS (TYPICAL) GATE-SOURCE VOLTAGE V GS (V) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) SWITCHING CHARACTERISTICS (TYPICAL) DRAIN-SOURCE VOLTAGE V DS (V) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) DRAIN CURRENT ID (A) CAPACITANCE Ciss, Coss, Crss (pF) SWITCHING TIME (ns) 101 102 103 104 10–1 21 0 035 7 2 1 0 1 10235 7 5732 Tch = 25°C f = 1MHZ VGS = 0V Ciss Coss Crss 21 0 135 7 2 1 0 235 7 2 35 71007 VGS = 10V 20V TC = 25°C Pulse Test 100 10123 4 5 7 1 0 223 4 5 7100 101 102 TC = 25°C VDS = 10V Pulse Test 75°C 125°C 100 10123 4 5 7 1 0 223 4 5 7101 102 103

7 Tch = 25°C

VDD = 30V VGS = 10V R GEN = RGS = 50Ω td(off) td(on) tf tr 1.0 2.0 3.0 4.0 5.0 0 4 8 12 16 20 TC = 25°C Pulse Test 30A 10A ID = 60A

Feb.1999 MITSUBISHI Nch POWER MOSFET FS30KM-06 HIGH-SPEED SWITCHING USE 0 1 02 03 04 05 0 VDS = 10V Tch = 25°C ID = 30A 20V 40V VGS = 0V Pulse Test TC = 125°C 75°C 25°C GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) GATE CHARGE Q g (nC) GATE-SOURCE VOLTAGE V GS (V) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) SOURCE-DRAIN VOLTAGE V SD (V) SOURCE CURRENT I S (A) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE ON-STATE RESISTANCE r DS (ON) (t°C) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS CHANNEL TEMPERATURE Tch (°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) PULSE WIDTH tw (s) TRANSIENT THERMAL IMPEDANCE Z th (ch–c) (°C/W) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) DRAIN-SOURCE ON-STATE RESISTANCE r DS (ON) (25°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) 0.4 0.6 0.8 1.0 1.2 1.4 –50 0 50 100 150 VGS = 0V ID = 1mA 1.0 2.0 3.0 4.0 5.0 –50 0 50 100 150 VDS = 10V ID = 1mA 10–1 100 101 –50 0 50 100 150 VGS = 10V ID = 1/2ID Pulse Test 10–2 10–1 100 101 10–423 57 23 57 23 57 23 57 100 23 57 101 23 57 10210–3 10–2 10–1 PDM tw D = T tw T D = 1.0 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse