FS30ASJ-03

FS30ASJ-03 POWEREX | Alldatasheet

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Feb.1999 FS30ASJ-03 OUTLINE DRAWING Dimensions in mm MP-3 MITSUBISHI Nch POWER MOSFET FS30ASJ-03 HIGH-SPEED SWITCHING USE APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. V V A A A A A W g ±20 120 120 –55 ~ +150 –55 ~ +150 0.26 VGS = 0V VDS = 0V L = 30µH Typical value Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Symbol MAXIMUM RATINGS (T c = 25°C) Parameter Conditions Ratings Unit 6.5 2.3 2.3 0.9MAX. 1 .0MAX. 2.3 1.0 0.5 – 0.1 5.5 – 0.2 10MAX. 2.3MIN. 1.5 – 0.2 0.5 – 0.2 0.8 5.0 – 0.2 A q GATE w DRAIN e SOURCE r DRAIN wr q qwe r e \` 4V DRIVE

Feb.1999 V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs C iss C oss C rss td (on) tr td (off) tf VSD R th (ch-c) trr MITSUBISHI Nch POWER MOSFET FS30ASJ-03 HIGH-SPEED SWITCHING USE V µA mA V m Ω m Ω V S pF pF pF ns ns ns ns V °C/W ns 1.0 1.5 0.435 800 250 110 1.0 ±0.1 0.1 2.0 0.57 1.5 4.17 ELECTRICAL CHARACTERISTICS (T ch = 25°C) Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Symbol UnitParameter Test conditions Limits Min. Typ. Max. ID = 1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = 30V, VGS = 0V ID = 1mA, VDS = 10V ID = 15A, VGS = 10V ID = 15A, VGS = 4V ID = 15A, VGS = 10V ID = 15A, VDS = 5V VDS = 10V, VGS = 0V , f = 1MHz VDD = 15V, ID = 15A, VGS = 10V, RGEN = RGS = 50Ω IS = 15A, VGS = 0V Channel to case IS = 15A, dis/dt = –50A/µs PERFORMANCE CURVES 0 200 50 100 150 POWER DISSIPATION DERATING CURVE CASE TEMPERATURE T C (°C) POWER DISSIPATION P D (W) MAXIMUM SAFE OPERATING AREA DRAIN-SOURCE VOLTAGE V DS (V) DRAIN CURRENT ID (A) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE V DS (V) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE V DS (V) 100 101 102 21 0 035 7 2 1 0 135 7 2 1 0 235 7 TC = 25°C Single Pulse tw = 10ms 100ms 10ms 1ms DC PD = 30W VGS = 10V Tc = 25°C Pulse Test 2.5V Tc = 25°C Pulse Test VGS = 10V PD = 30W

Feb.1999 MITSUBISHI Nch POWER MOSFET FS30ASJ-03 HIGH-SPEED SWITCHING USE 035 7 2 1 0 135 7 2 1 0 232 357 VGS = 4V 10V Tc = 25°C Pulse Test 02468 1 0 Tc = 25°C VDS = 10V Pulse Test 1.0 2.0 3.0 4.0 5.0 02468 1 0 ID = 50A Tc = 25°C Pulse Test 30A 10A 102 103 104 100 21 0 135 735 7 2 1 0 235 7 2 32 Ciss Coss Crss Tch = 25°C f = 1MHZ VGS = 0V 100 10123 4 5 7 1 0 223 4 5 7100 101 102 7 td(off) td(on) tr Tch = 25°C VDD = 15V VGS = 10V R GEN = RGS = 50Ω tf ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) GATE-SOURCE VOLTAGE V GS (V) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ ) TRANSFER CHARACTERISTICS (TYPICAL) GATE-SOURCE VOLTAGE V GS (V) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) SWITCHING CHARACTERISTICS (TYPICAL) DRAIN-SOURCE VOLTAGE V DS (V) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) DRAIN CURRENT ID (A) CAPACITANCE Ciss, Coss, Crss (pF) SWITCHING TIME (ns) 100 10123 4 5 7 1 0 223 4 5 7100 101 102 TC = 25°C 75°C 125°C VDS = 5V Pulse Test

Feb.1999 MITSUBISHI Nch POWER MOSFET FS30ASJ-03 HIGH-SPEED SWITCHING USE 10–1 100 101 102 10–423 57 23 57 23 57 23 57 100 23 57 101 23 57 10210–3 10–2 10–1 PDM tw D = T tw T 0.5 0.2 D = 1.0 Single Pulse 0.1 0.05 0.02 0.01 GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) GATE CHARGE Q g (nC) GATE-SOURCE VOLTAGE V GS (V) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) SOURCE-DRAIN VOLTAGE V SD (V) SOURCE CURRENT I S (A) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE ON-STATE RESISTANCE r DS (ON) (t°C) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS CHANNEL TEMPERATURE Tch (°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) PULSE WIDTH tw (s) TRANSIENT THERMAL IMPEDANCE Z th (ch–c) (°C/W) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) DRAIN-SOURCE ON-STATE RESISTANCE r DS (ON) (25°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) 0 4 8 12 16 20 VDS = 10V 20V 25V Tch = 25°C ID = 30A TC = 125°C 75°C 25°C VGS = 0V Pulse Test 10–1 100 101 –50 0 50 100 150 VGS = 10V ID = 1/2ID Pulse Test 0.8 1.6 2.4 3.2 4.0 –50 0 50 100 150 VDS = 10V ID = 1mA 0.4 0.6 0.8 1.0 1.2 1.4 –50 0 50 100 150 VGS = 0V ID = 1mA