FS30AS-06

FS30AS-06 POWEREX | Alldatasheet

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Feb.1999 FS30AS-06 OUTLINE DRAWING Dimensions in mm MP-3 MITSUBISHI Nch POWER MOSFET FS30AS-06 HIGH-SPEED SWITCHING USE APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. ±20 120 120 –55 ~ +150 –55 ~ +150 0.26 VGS = 0V VDS = 0V L = 100µH Typical value Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight V V A A A A A W g VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Symbol MAXIMUM RATINGS (T c = 25°C) Parameter Conditions Ratings Unit 6.5 2.3 2.3 0.9MAX. 1 .0MAX. 2.3 1.0 0.5 – 0.1 5.5 – 0.2 10MAX. 2.3MIN. 1.5 – 0.2 0.5 – 0.2 0.8 5.0 – 0.2 A q GATE w DRAIN e SOURCE r DRAIN wr q qwe r e \` 10V DRIVE

Feb.1999 MITSUBISHI Nch POWER MOSFET FS30AS-06 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (T ch = 25°C) 0 200 50 100 150 POWER DISSIPATION DERATING CURVE CASE TEMPERATURE T C (°C) POWER DISSIPATION P D (W) MAXIMUM SAFE OPERATING AREA DRAIN-SOURCE VOLTAGE V DS (V) DRAIN CURRENT ID (A) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE V DS (V) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE V DS (V) 100 101 102 10057 2 1 0 135 7 2 1 0 235 73 32 tw = 10ms TC = 25°C Single Pulse 100ms 10ms 1ms DC 02468 1 0 VGS = 20V TC = 25°C Pulse Test 10V PD = 35W 012345 5V6V TC = 25°C Pulse Test VGS = 20V 10V PD = 35W V (BR) DSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs C iss C oss C rss td (on) tr td (off) tf VSD R th (ch-c) trr V µA mA V m Ω V S pF pF pF ns ns ns ns V °C/W ns 2.0 3.0 0.345 1250 310 150 1.0 ±0.1 0.1 4.0 0.450 1.5 3.57 Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Symbol UnitParameter Test conditions Limits Min. Typ. Max. I D = 1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = 60V, VGS = 0V ID = 1mA, VDS = 10V ID = 15A, VGS = 10V ID = 15A, VGS = 10V ID = 15A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz VDD = 30V, ID = 15A, VGS = 10V, RGEN = RGS = 50Ω IS = 15A, VGS = 0V Channel to case IS = 30A, dis/dt = –100A/µs PERFORMANCE CURVES

Feb.1999 MITSUBISHI Nch POWER MOSFET FS30AS-06 HIGH-SPEED SWITCHING USE 100 0 4 8 12 16 20 TC = 25°C VDS = 10V Pulse Test ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) GATE-SOURCE VOLTAGE V GS (V) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ ) TRANSFER CHARACTERISTICS (TYPICAL) GATE-SOURCE VOLTAGE V GS (V) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) SWITCHING CHARACTERISTICS (TYPICAL) DRAIN-SOURCE VOLTAGE V DS (V) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) DRAIN CURRENT ID (A) CAPACITANCE Ciss, Coss, Crss (pF) SWITCHING TIME (ns) 101 102 103 104 10–1 21 0 035 7 2 1 0 1 10235 7 5732 Tch = 25°C f = 1MHZ VGS = 0V Ciss Coss Crss 1.0 2.0 3.0 4.0 5.0 0 4 8 12 16 20 TC = 25°C Pulse Test 30A 10A ID = 60A 21 0 135 7 2 1 0 235 7 2 35 71007 VGS = 10V 20V TC = 25°C Pulse Test 100 10123 4 5 7 1 0 223 4 5 7100 101 102 TC = 25°C VDS = 10V Pulse Test 75°C 125°C 100 10123 4 5 7 1 0 223 4 5 7101 102 103

7 Tch = 25°C

VDD = 30V VGS = 10V R GEN = RGS = 50Ω td(off) td(on) tf tr

Feb.1999 MITSUBISHI Nch POWER MOSFET FS30AS-06 HIGH-SPEED SWITCHING USE 0 1 02 03 04 05 0 VDS = 10V Tch = 25°C ID = 30A 20V 40V VGS = 0V Pulse Test TC = 125°C 75°C 25°C GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) GATE CHARGE Q g (nC) GATE-SOURCE VOLTAGE V GS (V) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) SOURCE-DRAIN VOLTAGE V SD (V) SOURCE CURRENT I S (A) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE ON-STATE RESISTANCE r DS (ON) (t°C) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS CHANNEL TEMPERATURE Tch (°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) PULSE WIDTH tw (s) TRANSIENT THERMAL IMPEDANCE Z th (ch–c) (°C/W) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) DRAIN-SOURCE ON-STATE RESISTANCE r DS (ON) (25°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) 10–2 10–1 100 101 10–423 57 23 57 23 57 23 57 100 23 57 101 23 57 10210–3 10–2 10–1 PDM tw D = T tw T D = 1.0 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse 0.4 0.6 0.8 1.0 1.2 1.4 –50 0 50 100 150 VGS = 0V ID = 1mA 1.0 2.0 3.0 4.0 5.0 –50 0 50 100 150 VDS = 10V ID = 1mA 10–1 100 101 –50 0 50 100 150 VGS = 10V ID = 1/2ID Pulse Test