FR06NG DOINGTER | Alldatasheet
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v alanche Current www.doingter.cn — 1 — FR06NG Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=900V,ID=6A,RDS(ON)<2.1Ω@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TA=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 900 V VGS Gate-Source Voltage ±30 V ID Continuous Drain Current- TJ=25℃ 6 A Continuous Drain Current-TJ=100℃ 3.9 EAS Single Pulse Avalanche Energy1 300 mJ PD Power Dissipation 56 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 2.25 ℃/W RƟJA Thermal Resistance,Junction to Ambient 62.5 D S G IAR A A ll data sheet.com
www.doingter.cn — 2 — FR06NG Package Marking and Ordering Information： Part NO. Marking Package FR06NG R06N TO-220F Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 900 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=900V --- --- 10 μA IGSS Gate-Source Leakage Current VGS=±30V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 3 --- 5 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=3A --- --- 2.1 Ω Dynamic Characteristics Ciss Input Capacitance VDS=25v, VGS=0V, f=1MHz --- 1680 --- pF Coss Output Capacitance --- 110 --- Crss Reverse Transfer Capacitance --- 11 --- Switching Characteristics td(on) Turn-On Delay Time VDS=450v.ID=6A RGEN=25Ω. (Note3,4) --- 35 80 ns tr Rise Time --- 90 190 ns td(off) Turn-Off Delay Time --- 55 120 ns tf Fall Time --- 60 130 ns Qg Total Gate Charge VGS=10V, VDS=720V ID=6A. (Note3,4) --- 30 40 nC Qgs Gate-Source Charge --- 9 --- nC Qgd Gate-Drain “Miller” Charge --- 12 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage VGS=0V,ID=6A --- --- 1.4 V IS Max. Diode Forward Current --- --- --- 6 A Ism Max. Pulsed Forward Curent --- --- 24 A A ll data sheet.com