FPD750 RFMD | Alldatasheet
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Technical content
Features
Matching® Applied GaAs HBT InGaP HBT GaAs MESFET SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade- Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. InP HBT LDMOS RF MEMS FPD750 0.5W POWER pHEMT The FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), featuring a 0.25μmx750 μm Schottky barrier gate, defined by high -reso- lution stepper-based photolithography. Th e double recessed gate structure mini- mizes parasitics to optimize performanc e. The epitaxial structure and processing have been optimized for reliable high-p ower applications. The FPD750 also fea- tures Si3N4 passivation and is available in the low-cost plastic SOT89, SOT343, and DFN packages. 27.5dBm Linear Output Power at 12GHz 11.5dB Power Gain at 12GHz 14.5dB Max Stable Gain at 12GHz 38dBm OIP3 50% Power-Added Efficiency
Applications
Narrowband and Broadband High-Performance Amplifiers SATCOM Uplink Transmitters PCS/Cellular Low-Voltage High-Efficiency Output Ampli- fiers Medium-Haul Digital Radio Transmitters Rev A1 DS090609 Package Style: Bare Die FPD7500.5W Power pHEMT Parameter Specification Unit ConditionMin. Typ. Max. Electrical Specifications P1dB Gain Compression 26.5 27.5 dBm V DS=8V , IDS=50% IDSS Maximum Stable Gain (S21/S12) 13.5 14.5 dB V DS=8V , IDS=50% IDSS Power Gain at P1dB (G1dB) 10.5 11.5 dB V DS=8V , IDS=50% IDSS Power-Added Efficiency (PAE) 45 % V DS=8V , IDS=50% IDSS, POUT=P1dB OIP3 38 dBm V DS=8V , IDS=50% IDSS 40 dBm Matched for optimal power, tuned for best IP 3 Saturated Drain-Source Current (IDSS) 185 230 280 mA V DS=1.3V, VGS=0V Maximum Drain-Source Current (IMAX) 370 mA V DS=1.3V, VGS≈+1V Transconductance (GM) 200 ms V DS=1.3V, VGS=0 V Gate-Source Leakage Current (IGSO)1 0 μA VGS=-5V Pinch-Off Voltage (VP) |1.0| V V DS=1.3V, IDS=0.36mA Gate-Source Breakdown Voltage (VBDGS) Gate-Drain Breakdown Voltage (VBDGD) Thermal Resistivity (θJC) 65 °C/W V DS>6V Note: TAMBIENT=22°C, RF specifications measured at f=12GHz using CW signal.
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. FPD750 Pad Layout Note: Coordinates are referenced from the bottom left hand corner of the die to the center of the bond pad opening. Absolute Maximum Ratings1 Parameter Rating Unit Drain-Source Voltage (VDS) (-3V<V GS<-0.5V) 2 10 V Gate-Source Voltage (VGS) (0V<V DS<+8V) -3 V Drain-Source Current (IDS) (For VDS<2V) IDSS Gate Current (IG) (Forward or reverse current) 7.5 mA RF Input Power (PIN) (Under any acceptable bias state) 22 dBm Channel Operating Temperature (TCH) (Under any acceptable bias state) 175 °C Storage Temperature (TSTG) (Non-Operating Storage) -65 to 150 °C Total Power Dissipation (PTOT)3, 4, 5 2.3 W Simultaneous Combination of Limits6 (2 or more max. limits) 80 % Notes: 1TAMBIENT=22°C unless otherwise noted; exceeding any one of these absolute max- imum ratings may cause permanent damage to the device. 2 Operating at absolute maximum VD continuously is not recommended. If operation at 10V is considered then IDS must be reduced in order to keep the part within its thermal power dissipation limits. Therefore VGS is restricted to <-0.5V. 3Total Power Dissipation to be de-rated as follows above 22°C: PTOT=2.3- (0.015W/°C)xT HS, where THS=heatsink or ambient temperature above 22°C. Example: For a 85°C carrier temperature: PTOT=2.3-(0.015x(85-22))=1.4W 4Total Power Dissipation (PTOT) defined as (PDC+PIN)–P OUT, where PDC: DC Bias Power, PIN: RF Input Power, POUT: RF Output Power. 5 Users should avoid exceeding 80% of 2 or more Limits simultaneously. 6Thermal Resistivity specification assumes a Au/Sn eutectic die attach onto an Au- plated copper heatsink or rib. Pad Description Pin Coordinates ( μm) AG a t e P a d 130, 170 BD r a i n P a d 380, 170 CS o u r c e P a d Die Size (μm) Die Thickness ( μm) Min. Bond Pad Opening ( μmx μm) 4 70x340 75 56x7 6 Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice.
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. FPD750 Preferred Assembly Instructions GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. The back of the die is metallized and the recommended mounting method is by the use of conductive epoxy. Epoxy should be applied to the attachment surface uniformly and sparingly to avoi d encroachment of epoxy on to the top face of the die, and ideally should not exceed half the chip height. For automated dispense Ablestick LMISR4 is recommended, and for manual dis- pense Ablestick 84-1 LMI or 84-1 LMIT are recommended . These should be cured at a temperature of 150 °C for 1 hour in an oven especially set aside for epoxy curing only. If possible the curing oven should be flushed with dry nitrogen. The gold-tin (80% Au 20% Sn) eutectic die attach has a melting point of approximately 280°C but the absolute temperature being used depends on the leadframe material used and the particular applic ation. The maximum time at used should be kept to a mini- mum. This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is recommended that 25.4µm diameter gold wire be used. Recommended lead bond technique is th ermocompression wedge bonding with 0.001” (25µm) diameter wire. The bond tool force shall be 35grams to 38grams. Bond ing stage temperature shall be 230°C to 240°C, heated tool (150°C to 160°C) is recommended. Ultrasonic or thermosonic bonding is not recommended. Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires should be minimized especially when making RF or ground connections. Handling Precautions To avoid damage to the devices, care should be exercised during handling. Proper Electro- static Discharge (ESD) precautions should be ob served at all stages of storage, handling, assembly, and testing. ESD/MSL Rating These devices should be treated as Class 0 (0V to 250V) usin g the human body model as defined in JEDEC Standard No. 22- A114. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. This is an unpackaged part and therefore no MSL rating applies. Application Notes and Design Data Application Notes and design data including S-parameters, noise parameters, and device model are available on request from www.rfmd.com. Reliability An MTTF of 4.2 million hours ata channel temperature of 150°C is achieved for the process used to manufacture this device. Disclaimers This product is not designed for use in any space-based or life-sustaining/supporting equipment.
Ordering Information
Delivery Quantity Ordering Code Full Pack (100) FPD750-000 Small Quantity (25) FPD750-000SQ Sample Quantity (3) FPD750-000S3
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. FPD750