FPD1050 RFMD | Alldatasheet
Document overview
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Technical content
Features
Matching® Applied GaAs HBT InGaP HBT GaAs MESFET SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade- Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. InP HBT LDMOS RF MEMS FPD1050 0.75W POWER pHEMT The FPD1050 is an AlGaAs/InGaAs pseudomor phic High Electron Mobility T ransis- tor (pHEMT), featuring a 0.25 μmx1050 μm Schottky barrier gate, defined by high- resolution stepper-based photolithograp hy. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and process- ing have been optimized for reliable high -power applications. The FPD1050 is also available in the low-cost plastic SOT89 package. 28.5dBm Linear Output Power at 12GHz 11dB Power Gain at 12GHz 14dB Max Stable Gain at 12GHz 41 dBm OIP3 45% Power-Added Efficiency
Applications
Narrowband and Broadband High-Performance Amplifiers SATCOM Uplink Transmitters PCS/Cellular Low-Voltage High-Efficiency Output Ampli- fiers Medium-Haul Digital Radio Transmitters Rev A0 DS080702 3.0 Package Style: Bare Die FPD1050 0.75W Power pHEMT Parameter Specification Unit ConditionMin. Typ. Max. P1dB Gain Compression 27.5 28.5 dBm V DS=8V , IDS=50% IDSS S21/S12 (MSG) 14.0 dB V DS=8V , IDS=50% IDSS Power Gain at P1dB (G1dB) 10.0 11.0 dB V DS=8V , IDS=50% IDSS PAE 45 % V DS=8V , IDS=50% IDSS, POUT=P1dB OIP3 39 dBm V DS=8V , IDS=50% IDSS 41 dBm Matched for optimal power, tuned for best IP 3 Saturated Drain-Source Current (IDSS) 260 325 385 mA V DS=1.3V, VGS=0V Maximum Drain-Source Current (IMAX) 520 mA V DS=1.3V, VGS≈+1V Transconductance (GM) 280 ms V DS=1.3V, VGS=0V Gate-Source Leakage Current (IGSO) 15 μAV GS=-5V Pinch-Off Voltage (VP) |1.0| V V DS=1.3V, IDS=1mA Gate-Source Breakdown Voltage (VBDGS) |12.0| |14.0| V I GS=3mA Gate-Drain Breakdown Voltage (VBDGD) |14.5| |16.0| V I GD=3mA Thermal Resistivity (θJC) * 45 °C/W V DS>6V *Note: TAMBIENT=22°C, RF specifications measured at f=12GHz using CW signal.
2 of 4 Rev A0 DS080702 3.0 support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. FPD1050 Pad Layout Note: Coordinates are referenced from the bottom left hand corner of the die to the center of the bond pad opening. Absolute Maximum Ratings1 Parameter Rating Unit Drain-Source Voltage (VDS) (-3V<V GS<-0.5V) 2 10 V Gate-Source Voltage (VGS) (0V<V DS<+8V) -3 V Drain-Source Current (IDS) (For VDS<2V) IDSS Gate Current (IG) (Forward or reverse) 10 mA RF Input Power (PIN) (Under any acceptable bias state) 23 dBm Channel Operating Temperature (TCH) (Under any acceptable bias state) 175 °C Storage Temperature (TSTG) (Non-Operating Storage) -65 to 150 °C Total Power Dissipation (PTOT)3, 4, 5 3.4 W Simultaneous Combination of Limits6 (2 or more max. limits) 80 % Notes: 1TAMBIENT=22°C unless otherwise noted; exceeding any one of these absolute max- imum ratings may cause permanent damage to the device. 2Operating at absolute maximum VD continuously is not recommended. If operation at 10V is considered then IDS must be reduced in order to keep the part within its thermal power dissipation limits. Therefore VGS is restricted to <-0.5V. 3Total Power Dissipation to be de-rated as follows above 22°C: PTOT=3.4- (0.022W/°C)xT HS, where THS=heatsink or ambient temperature above 22°C. Example: For a 85°C carrier temperature: PTOT=3.4-(0.022x(85-22))=2.01W 4Total Power Dissipation (PTOT) defined as (PDC+PIN)–P OUT, where PDC: DC Bias Power, PIN: RF Input Power, POUT: RF Output Power. 5Users should avoid exceeding 80% of 2 or more Limits simultaneously. 6Thermal Resistivity specification assumes a Au/Sn eutectic die attach onto an Au- plated copper heatsink or rib. Pad Description Pin Coordinates ( μm) A Gate pad. 130, 220 B Drain pad. 380, 220 C Source pad. Die Size (μm) Die Thickness ( μm) Min. Bond Pad Opening ( μmx μm) 470 x 440 75 67 x 77 Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. A B C
3 of 4Rev A0 DS080702 3.0 support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. FPD1050 Preferred Assembly Instructions GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. The back of the die is metallized and the recommended mounting method is by the use of conductive epoxy. Epoxy should be applied to the attachment surface uniformly and sparingly to av oid encroachment of epoxy on to the top face of the die and ideally should not exceed half the chip height. For automated dispense Ablestic k LMISR4 is recommended. For manual dis- pense Ablestick 84-1 LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150°C for 1 hour in an oven especially set aside for epoxy curing only. If possible, the curing oven should be flushed with dry nitrogen. The gold-tin (80% Au 20% Sn) eutectic die attach has a melting point of approximately 280°C but the absolute temperature being used depends on the leadframe material used and the particular application. The maximum time should be kept to a minimum. This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is recommended that 25.4mm diameter gold wire be used. Recommended lead bond technique is th ermocompression wedge bonding with 0.001” (25µm) diameter wire. Bond force, time stage temperature, and ultrasonics are all critical parameters and the settings are dependant on the setup and application being used. Ultrasonic or thermosonic bonding is not recommended. Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires should be minimized especially when making RF or ground connections. Handling Precautions To avoid damage to the devices, care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. ESD/MSL Rating These devices should be treated as Class 0 (0V to 250V) usin g the human body model as defined in JEDEC Standard No. 22- A114. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. Application Notes and Design Data Application Notes and design data in cluding S-parameters and device model are available on request and from www.rfmd.com. Reliability An MTTF of in excess of 4.2 million hours at a channel temperature of 150°C is achieved for the process used to manufacture this device. Disclaimers This product is not designed for use in any space-based or life-sustaining/supporting equipment.
Ordering Information
Delivery Quantity Ordering Code Standard Order Quantity (waffle-pack) FPD1050-000 Small Quantity (25) FPD1050-000SQ Small Quantity (3) FPD1050-000S3
4 of 4 Rev A0 DS080702 3.0 support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. FPD1050