FP2189

FP2189-RFID WJCI | Alldatasheet

Document overview

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Technical content

Specifications and information are subject to change without notice. WJ Communications, Inc • Phone 1-800- WJ1-4401 • FAX: 408-577-6621 • e- mail: sales@wj.com • Web site: www.wj.com September 2004 FP2189 1 - Watt HFET Product Information Product Features

• 50 – 4000 MHz
• +30 dBm P1dB
• +43 dBm Output IP3
• High Drain Efficiency
• 18.5 dB Gain @ 900 MHz
• Lead-free/Green/RoHS- compliant SOT-89 Package
• MTTF >100 Years

Applications

• Mobile Infrastructure
• CATV / DBS
• W-LAN / ISM
• RFID
• Defense / Homeland S ecurity
• Fixed Wireless Product Description The FP2189 is a high performance 1 -Watt HFET (Heterostructure FET) in a low -cost SOT -89 surface - mount package. This device works optimally at a drain bias of +8 V and 250 mA to achieve +43 dBm output IP3 performance and an output power of +30 dBm at 1 -dB compression, while providing 18.5 dB gain at 900 MHz. The device conforms to WJ Communications’ long history of producing high reliability and quality components. The FP2189 has an associated MTTF of greater than 100 years at a mounting temperature of 85 °C and is available in both the standard SOT -89 package and the environmentally - friendly lead-free/green/RoHS-compliant and green SOT - 89 package. All devices are 100% RF & DC tested. The product is targeted f or use as driver amplifiers for wireless infrastructure where high performance and high efficiency are required. Functional Diagram Function Pin No. Input / Gate 1 Output / Drain 3 Ground 2, 4 Specifications DC Parameter Units Min Typ Max Saturated Drain Current, Idss (1) mA 445 615 705 Transconductance, Gm mS 280 Pinch Off Voltage, Vp (2) V -2.1 RF Parameter (3) Units Min Typ Max Frequency Range MHz 50 - 4000 Test Frequency MHz 800 Small Signal Gain dB 18.5 SS Gain (50 Ω , unmatched) dB 15 21 Maximum Stable Gain dB 24 Output P1dB dBm +30 Output IP3 (4) dBm +43 Noise Figure dB 4.5 Drain Bias +8V @ 250 mA 1. Idss is measured with Vgs = 0 V, Vds = 3 V. 2. Pinch-off voltage is measured when Ids = 2.4 mA. 3. Test conditions unless otherwise noted: T = 25ºC, VDS = 8 V, IDQ = 250 mA in an application circuit with ZL = ZLOPT, ZS = ZSOPT (optimized for output power). 4. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Absolute Maximum Rating Parameter Rating Operating Case Temperature -40 to +85 °C Storage Temperature -55 to +125 °C DC Power 4.0 W RF Input Power (continuous) 6 dB above Input P1dB Drain to Gate Voltage, Vdg +14 V Junction Temperature +220° C Operation of this device above any of these parameters may cause permanent damage. Typical Performance (5) Parameter Units Typical Frequency MHz 915 1960 2140 2450 Gain dB 18.7 15.6 14.4 13.0 Input Return Loss dB 21 14.6 23 26 Output Return Loss dB 8.3 12 11.5 9.6 Output P1dB dBm +30.2 +30.4 +30.6 +31.2 Output IP3 (4) dBm +42.8 +43.5 +43.9 +45.3 Noise Figure dB 4.5 3.4 4.5 IS-95 Channel Power @ -45 dBc ACPR dBm +24.5 +23.8 W-CDMA Ch. Power @ -45 dBc ACLR +22.2 Drain Voltage V +8 Drain Current mA 250 5. Typical parameters represent performance in a tuned application circuit.

Ordering Information

Part No. Description FP2189 1 -Watt HFET (leaded SOT-89 Pkg) FP2189-G 1 -Watt HFET (lead -free/green/RoHS-compliant SOT-89 Pkg) FP2189-PCB900S 870 – 960 MHz Application Circuit FP2189-PCB1900S 1930 – 1990 MHz Application Circuit FP2189-PCB2140S 2110 – 2170 MHz Application Circuit RF IN GND RF OUT GND 1 2 3

Specifications and information are subject to change without notice. WJ Communications, Inc • Phone 1-800- WJ1-4401 • FAX: 408-577-6621 • e- mail: sales@wj.com • Web site: www.wj.com September 2004 FP2189 1 - Watt HFET Product Information Typical Device Data S-Parameters (VDS = +8 V, IDS = 250 mA, T = 25 °C, calibrated to device leads) 0 1 2 3 4 5 6 Frequency (GHz) S21 and Maximum Stable Gain S21, MSG (dB) S21 MSG 1.0 1.0-1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 S11 Swp Max 6GHz Swp Min 0.01GHz 1.0 1.0-1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 S22 Swp Max 6GHz Swp Min 0.01GHz Note: Measurements were made on the packaged device in a test fixture with 50 ohm input and output lines. The S-parameters shown are the de-embedded data down to the device leads and represents typical performance of the device. Freq (MHz) S11 (mag) S11 (ang) S21 (mag) S21 (ang) S12 (mag) S12 (ang) S22 (mag) S22 (ang) Device S-parameters are available for download off of the website at: http://www.wj.com Load-Pull Data at 1.96 GHz (Vds = 8 V, Ids = 250 mA, 25°C, ZS = 50 Ω ) 1.0 1.0-1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 Output IP3 Swp Max 6GHz Swp Min 1e-009GHz

1.96 GHz

r 9.0 Ohm x 11.0 Ohm 1.0 1.0-1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 P1dB Swp Max 6GHz Swp Min 1e-009GHz Maximum IP3 = +51 dBm at ZL = 9 + j11 Ω Maximum P1dB = +30.9 dBm at ZL = 22 + j2 Ω GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz

Specifications and information are subject to change without notice. WJ Communications, Inc • Phone 1-800- WJ1-4401 • FAX: 408-577-6621 • e- mail: sales@wj.com • Web site: www.wj.com September 2004 FP2189 1 - Watt HFET Product Information The application circuit is matched for output power. Typical RF Performance Drain Bias = +8 V, Ids = 250 mA, 25 °C Frequency MHz 870 915 960 S21 – Gain dB 18.9 18.7 18.4 S11 – Input Return Loss dB -24 -21 -12 S22 – Output Return Loss dB -7.6 -8.3 -9.6 Output P1dB dBm +30.0 +30.2 +30.0 Output IP3 (+15 dBm / tone, 1 MHz spacing) dBm +42.8 Noise Figure dB 4.2 4.5 4.5 IS-95 Channel Power @ -45 dBc ACPR dBm +24.5 RES ID=

10 Ohm

ID= DNP pF C14 IND ID= 18 nH RES ID=

100 Ohm

ID= 100 pF CAP ID= DNP pF IND ID= 82 nH CAP ID= DNP pF CAP ID= 100 pF CAP ID= 1000 pF CAP ID= DNP pF C12 CAP ID= 100 pF CAP ID= 4.7 pF C15 CAP ID= DNP pF C13 IND ID= 5.6 nH CAP ID= 1e5 pF C11 CAP ID= DNP pF C10 CAP ID= 100 pF CAP ID= 1000 pF IND ID= 5.6 nH CAP ID= 2.4 pF SUBCKT NET= ID= "FP2189" PORT

50 Ohm

-Vgg Vds=8V @ 250 mA 14 mil GETEK TM ML200DSS (er = 4.2) The main microstrip line has a line impedance of 50 O. Bill of Materials Ref. Desig. Value Part style Size C1, C3, C7, C9, C13 100 pF Chip capacitor 0603 C4, C8 1000 pF Chip capacitor 0603 C5 2.4 pF Chip capacitor 0603 C11 0.1 µF Chip capacitor 1206 L1 18 nH Multilayer chip inductor 0603 L2, L4 5.6 nH Multilayer chip inductor 0603 L3 82 nH Multilayer chip inductor 0603 R1 100 O Chip resistor 0603 R2 10 O Chip resistor 0603 Q1 FP2189 WJ 1W HFET SOT-89 C2, C6, C10, C12, C14 Do Not Place

Specifications and information are subject to change without notice. WJ Communications, Inc • Phone 1-800- WJ1-4401 • FAX: 408-577-6621 • e- mail: sales@wj.com • Web site: www.wj.com September 2004 FP2189 1 - Watt HFET Product Information S11 vs. Frequency -30 -25 -20 -15 -10 860 880 900 920 940 960 Frequency (MHz) S11 (dB) -40c +25c +85c S21 vs. Frequency 860 880 900 920 940 960 Frequency (MHz) S21 (dB) -40c +25c +85c S22 vs. Frequency -30 -25 -20 -15 -10 860 880 900 920 940 960 Frequency (MHz) S22 (dB) -40c +25c +85c P1dB vs. Frequency 860 880 900 920 940 960 Frequency (MHz) P1dB (dBm) -40c +25c +85c Noise Figure vs. Frequency 860 880 900 920 940 960 Frequency (MHz) NF (dB) -40c +25c +85c ACPR vs. Channel PowerIS-95, 9 Ch. Forward, ±885 kHz offset, 30 kHz Meas BW -70 -60 -50 -40 -30 20 21 22 23 24 25 26 Output Channel Power (dBm) ACPR (dBc) -40 C +25 C +85 C freq = 915 MHz OIP3 vs. Temperature -40 -15 10 35 60 85 Temperature (°C) OIP3 (dBm) freq = 915, 916 MHz +15 dBm / tone IMD products vs. Output Power fundamental frequency = 915 MHz, 916 MHz; Temp = +25° C -100 -80 -60 -40 -20 0 4 8 12 16 20 24 Output Power (dBm) IMD products (dBm) IMD_Low IMD_High OIP3 vs. Output Power fundamental frequency = 915 MHz, 916 MHz; Temp = +25° C 0 4 8 12 16 20 24 Output Power (dBm) OIP3 (dBm) Output Power / Gain vs. Input Power frequency = 915 MHz, Temp = -40° C -4 0 4 8 12 16 20 Input Power (dBm) Gain (dB) Output Power (dBm) Output Power Gain Output Power / Gain vs. Input Power frequency = 915 MHz, Temp = +85° C -4 0 4 8 12 16 20 Input Power (dBm) Gain (dB) Output Power (dBm) Output Power Gain Output Power / Gain vs. Input Power frequency = 915 MHz, Temp = +25° C -4 0 4 8 12 16 20 Input Power (dBm) Gain (dB) Output Power (dBm) Output Power Gain

Specifications and information are subject to change without notice. WJ Communications, Inc • Phone 1-800- WJ1-4401 • FAX: 408-577-6621 • e- mail: sales@wj.com • Web site: www.wj.com September 2004 FP2189 1 - Watt HFET Product Information The application circuit is matched for output power. Typical RF Performance Drain Bias = +8 V, Ids = 250 mA, 25 °C Frequency MHz 1930 1960 1990 S21 – Gain dB 15.6 15.6 15.4 S11 – Input Return Loss dB -15.4 -14.6 -13.2 S22 – Output Return Loss dB -12 -12 -12 Output P1dB dBm +30.2 +30.4 +30.5 Output IP3 (+15 dBm / tone, 1 MHz spacing) dBm +43.5 Noise Figure dB 3.4 3.4 3.6 IS-95 Channel Power @ -45 dBc ACPR dBm +23.8 RES ID=

5.1 Ohm

ID= 2.4 pF C13 IND ID= 10 nH RES ID=

20 Ohm

ID= 33 pF CAP ID= 2.4 pF IND ID= 22 nH CAP ID= 33 pF CAP ID= 1000 pF CAP ID= 10000 pF CAP ID= 33 pF CAP ID= DNP pF C11 CAP ID= DNP pF C10 CAP ID= 33 pF C3 CAP ID= 1000 pF CAP ID= DNP pF C5 CAP ID= DNP pF C12 CAP ID= 1.5 pF C14 SUBCKT NET= ID= "FP2189" PORT

1 PORT

-Vgg Vds=8V @ 250 mA 14 mil GETEK TM ML200DSS (e r = 4.2) The main microstrip line has a line impedance of 50 O. Bill of Materials Ref. Desig. Value Part style Size C1, C3, C7, C9 100 pF Chip capacito r 0603 C2, C13 2.4 pF Chip capacitor 0603 C4, C6 1000 pF Chip capacitor 0603 C8 0.1 µF Chip capacitor 1206 C14 1.5 pF Chip capacitor 0603 L1 10 nH Multilayer chip inductor 0603 L2 22 nH Multilayer chip inductor 0603 R1 20 O Chip resistor 0603 R2 5.1 O Chip resistor 0603 Q1 FP2189 WJ 1W HFET SOT-89 C5, C10, C11, C12 Do Not Place

Specifications and information are subject to change without notice. WJ Communications, Inc • Phone 1-800- WJ1-4401 • FAX: 408-577-6621 • e- mail: sales@wj.com • Web site: www.wj.com September 2004 FP2189 1 - Watt HFET Product Information S11 vs. Frequency -30 -25 -20 -15 -10 1930 1950 1970 1990 Frequency (MHz) S11 (dB) -40C +25C +85C S21 vs. Frequency 1930 1950 1970 1990 Frequency (MHz) S21 (dB) -40C +25C +85C S22 vs. Frequency -30 -25 -20 -15 -10 1930 1950 1970 1990 Frequency (MHz) S22 (dB) -40C +25C +85C P1dB vs. Frequency 1930 1950 1970 1990 Frequency (MHz) P1dB (dBm) -40c +25c +85c Noise Figure vs. Frequency 1930 1950 1970 1990 Frequency (MHz) NF (dB) -40c +25c +85c ACPR vs. Channel PowerIS-95, 9 Ch. Forward, ±885 kHz offset, 30 kHz Meas BW -70 -60 -50 -40 -30 18 19 20 21 22 23 24 25 26 Output Channel Power (dBm) ACPR (dBc) -40 C +25 C +85 C freq = 1960 MHz OIP3 vs. Temperature -40 -15 10 35 60 85 Temperature (°C) OIP3 (dBm) freq = 1960, 1961 MHz +15 dBm / tone IMD products vs. Output Power fundamental frequency = 1960, 1961 MHz; Temp = +25° C -100 -80 -60 -40 -20 0 4 8 12 16 20 24 Output Power (dBm) IMD products (dBm) IMD_Low IMD_High OIP3 vs. Output Power fundamental frequency = 1960, 1961 MHz; Temp = +25° C 0 4 8 12 16 20 24 Output Power (dBm) OIP3 (dBm) Output Power / Gain vs. Input Power frequency = 1960 MHz, Temp = -40° C -4 0 4 8 12 16 20 Input Power (dBm) Gain (dB) Output Power (dBm) Output Power Gain Output Power / Gain vs. Input Power frequency = 1960 MHz, Temp = +25° C -4 0 4 8 12 16 20 Input Power (dBm) Gain (dB) Output Power (dBm) Output Power Gain Output Power / Gain vs. Input Power frequency = 1960 MHz, Temp = +85° C -4 0 4 8 12 16 20 Input Power (dBm) Gain (dB) Output Power (dBm) Output Power Gain

Specifications and information are subject to change without notice. WJ Communications, Inc • Phone 1-800- WJ1-4401 • FAX: 408-577-6621 • e- mail: sales@wj.com • Web site: www.wj.com September 2004 FP2189 1 - Watt HFET Product Information The application circuit is matched for outp ut power. Typical RF Performance Drain Bias = +8 V, Ids = 250 mA, 25 °C Frequency MHz 2110 2140 2170 S21 – Gain dB 14.4 14.4 14.4 S11 – Input Return Loss dB -23 -23 -22 S22 – Output Return Loss dB -9.7 -11.5 -12 Output P1dB dBm +30.5 +30.6 +30.2 Output IP3 (+15 dBm / tone, 1 MHz spacing) dBm +43.9 Noise Figure dB 4.2 4.5 4.3 W-CDMA Channel Power @ -45 dBc ACPR dBm +22.2 RES ID=

6.2 Ohm

ID= DNP pF IND ID= 5.6 nH RES ID= ID= 1.8 pF CAP ID= DNP pF IND ID= 18 nH CAP ID= 1000 pF CAP ID= 22 pF CAP ID= 10000 pF CAP ID= 22 pF CAP ID= DNP pF C5 CAP ID= 1.8 pF C11 CAP ID= 1 pF C10 CAP ID= 33 pF SUBCKT NET= ID= "FP2189" PORT -Vgg Vds=8V @ 250 mA 14 mil GETEK TM ML200DSS (e r = 4.2) The main microstrip line has a line impedance of 50 O. Bill of Materials Ref. Desig. Value Part style Size C1, C11 1.8 pF Chip capacitor 0603 C3 33 pF Chip capacitor 0805 C6, C9 22 pF Chip capacitor 0603 C7 1000 pF Chip capacito r 0603 C8 0.1 µF Chip capacitor 1206 C10 1.0 pF Chip capacitor 0603 L1 5.6 nH Multilayer chip inductor 0603 L2 18 nH Multilayer chip inductor 0603 R1 10 O Chip resistor 0603 R2 6.2 O Chip resistor 0603 Q1 FP2189 WJ 1W HFET SOT-89 C2, C4, C5 Do Not Place

Specifications and information are subject to change without notice. WJ Communications, Inc • Phone 1-800- WJ1-4401 • FAX: 408-577-6621 • e- mail: sales@wj.com • Web site: www.wj.com September 2004 FP2189 1 - Watt HFET Product Information S11 vs. Frequency -30 -25 -20 -15 -10 2110 2130 2150 2170 Frequency (MHz) S11 (dB) -40c +25c +85c S21 vs. Frequency 2110 2130 2150 2170 Frequency (MHz) S21 (dB) -40c +25c +85c S22 vs. Frequency -30 -25 -20 -15 -10 2110 2130 2150 2170 Frequency (MHz) S22 (dB) -40c +25c +85c P1dB vs. Frequency 2110 2130 2150 2170 Frequency (MHz) P1dB (dBm) -40C +25C +85C Noise Figure vs. Frequency 2110 2130 2150 2170 Frequency (MHz) NF (dB) -40C +25C +85C ACPR vs. Channel Power3GPP W-CDMA, Test Model 1 + 64 DPCH, ±5 MHz offset -60 -55 -50 -45 -40 -35 18 19 20 21 22 23 24 Output Channel Power (dBm) ACPR (dBc) -40 C +25 C +85 C freq = 2140 MHz OIP3 vs. Temperature -40 -15 10 35 60 85 Temperature (°C) OIP3 (dBm) freq = 2140, 2141 MHz +15 dBm / tone IMD products vs. Output Power fundamental frequency = 2140, 2141 MHz; Temp = +25° C -100 -80 -60 -40 -20 0 4 8 12 16 20 24 Output Power (dBm) IMD products (dBm) IMD_Low IMD_High OIP3 vs. Output Power fundamental frequency = 2140, 2141 MHz; Temp = +25° C 0 4 8 12 16 20 24 Output Power (dBm) OIP3 (dBm) Output Power / Gain vs. Input Power frequency = 2140 MHz, Temp = -40° C 2 6 10 14 18 22 Input Power (dBm) Gain (dB) Output Power (dBm) Output Power Gain Output Power / Gain vs. Input Power frequency = 2140 MHz, Temp = +25° C 2 6 10 14 18 22 Input Power (dBm) Gain (dB) Output Power (dBm) Output Power Gain Output Power / Gain vs. Input Power frequency = 2140 MHz, Temp = +85° C 2 6 10 14 18 22 Input Power (dBm) Gain (dB) Output Power (dBm) Output Power Gain 14 mil GETEKTM ML200DSS (er = 4.2) The layout of this circuit can be downloaded from the website.

Specifications and information are subject to change without notice. WJ Communications, Inc • Phone 1-800- WJ1-4401 • FAX: 408-577-6621 • e- mail: sales@wj.com • Web site: www.wj.com September 2004 FP2189 1 - Watt HFET Product Information Reference Design: 2400 – 2600 MHz The application circuit is matched for output power. Typical RF Performance Drain Bias = +8 V, Ids = 250 mA, 25 °C Frequency MHz 2400 2500 2600 S21 – Gain dB 12.9 13.0 12.6 S11 – Input Return Loss dB -14.5 -26 -15 S22 – Output Return Loss dB -7.9 -9.6 -11.4 Output P1dB dBm +31.1 +31.2 +30.8 Output IP3 (+15 dBm / tone, 1 MHz spacing) dBm +45.0 +45.3 +47.0 The 2.4 – 2.6 GHz Referenc e Circuit is shown for design purposes only. An evaluation board is not readily available for this application. The reader can obtain an FP2189 -PCB2140S evaluation board and modify it with the circuit shown to achieve the performance shown in this reference design. Frequency (GHz) S-Parameters -30 -20 -10 (dB) RES ID=

5.6 Ohm

ID= DNP pF IND ID= 5.6 nH RES ID= ID= 22 pF CAP ID= DNP pF IND ID= 18 nH CAP ID= 1000 pF CAP ID= 22 pF CAP ID= 1e4 pF CAP ID= 22 pF CAP ID= 1.3 pF C5 CAP ID= 1.8 pF C11 CAP ID= 33 pF TLIN F0= EL= Z0= ID=

2400 MHz

11.8 Deg

F0= EL= Z0= ID=

23.5 Deg

NET= ID= "FP2189" PORT -Vgg Vds=8V @ 250 mA 14 mil GETEK TM ML200DSS (e r = 4.2) The main microstrip line has a line impedance of 50 O. Bill of Materials Ref. Desig. Value Part style Size C1, C6, C9 22 pF Chip capacitor 0603 C3 33 pF Chip capacitor 0805 C5 1.3 pF Chip capacitor 0603 C11 1.8 pF Chip capacitor 0603 C7 1000 pF Chip capacitor 0603 C8 0.1 µF Chip capacitor 1206 L1 5.6 nH Multilayer chip inductor 0603 L2 18 nH Multilayer chip inductor 0603 R1 10 O Chip resistor 0603 R2 5.6 O Chip resistor 0603 Q1 FP2189 WJ 1W HFET SOT-89 C2, C4 Do Not Plac e

Specifications and information are subject to change without notice. WJ Communications, Inc • Phone 1-800- WJ1-4401 • FAX: 408-577-6621 • e- mail: sales@wj.com • Web site: www.wj.com September 2004 FP2189 1 - Watt HFET Product Information Reference Design: 3400 – 3600 MHz The application circuit is matched for output power. Typical RF Performance Drain Bias = +8 V, Ids = 250 mA, 25 °C Frequency MHz 3400 3500 3600 S21 – Gain dB 12.6 13.0 12.9 S11 – Input Return Loss dB -15 -28 -12 S22 – Output Return Loss dB -7.6 -7.9 -9.1 Output P1dB dBm +30.9 +30.9 +30.8 Output IP3 (+15 dBm / tone, 1 MHz spacing) dBm +43.8 +43.6 +43.8 The 3.4 – 3.6 GHz Reference Circuit is shown for design purposes only. An evaluation board is not readi ly available for this application. The reader can obtain an FP2189 -PCB2140S evaluation board and modify it with the circuit shown to achieve the performance shown in this reference design. Frequency (GHz) S-Parameters -30 -20 -10 (dB) RES ID= ID= 0.3 pF C10 IND ID= 5.6 nH RES ID= ID= 22 pF CAP ID= DNP pF IND ID= 15 nH CAP ID= 22 pF CAP ID= 1000 pF CAP ID= 1e4 pF CAP ID= 22 pF CAP ID= 0.7 pF CAP ID= 33 pF CAP ID= 1.1 pF IND ID= 2.7 nH SUBCKT NET= ID= "FP2189" PORT -Vgg Vds=8V @ 250 mA 14 mil GETEK TM ML200DSS (e r = 4.2) The main microstrip lin e has a line impedance of 50 O. Bill of Materials Ref. Desig. Value Part style Size C1, C7, C9 22 pF Chip capacitor 0603 C3 33 pF Chip capacitor 0805 C4 1.1 pF Chip capacitor 0603 C5 0.7 pF Chip capacitor 0603 C6 1000 pF Chip capacitor 0603 C8 0.1 µF Chip capacitor 1206 C10 0.3 pF Chip capacitor 0603 L1 5.6 nH Multilayer chip inductor 0603 L2 15 nH Multilayer chip inductor 0603 L3 2.7 nH Multilayer chip inductor 0603 R1 20 O Chip resistor 0603 R2 6.2 O Chip resistor 0603 Q1 FP2189 WJ 1W HFET SOT-89 C2 Do Not Place

Specifications and information are subject to change without notice. WJ Communications, Inc • Phone 1-800- WJ1-4401 • FAX: 408-577-6621 • e- mail: sales@wj.com • Web site: www.wj.com September 2004 FP2189 1 - Watt HFET Product Information Application Note: Constant-Current Active-Biasing Special attention should be taken to properly bias the FP2189. Power supply sequencing is required to prevent the device from operating at 100% Idss for a prolonged period of time and possibly causing damage to the device. It is recommended that for the safest operation, the negative supply be “first on and last off.” With a negative gate voltage present, the drain voltage can then be applied to the device. The gat e voltage can then be adjusted to have the device be used at the proper quiescent bias condition. An optional active -bias current mirror is recommended for use with the application circuits shown in this datasheet. Generally in a laboratory environment, the gate voltage is adjusted until the drain draws the recommended operating current. The gate voltage required can vary slightly from device to device because of device pinchoff variation, while also varying slightly over temperature. The active-bias circuit, shown on the right, uses dual PNP transistors to provide a constant drain current into the FP2189, while also eliminating the effects of pinchoff variation. This configuration is best suited for applications where the intended output power level of the amplifier is backed off at least 6 dB away from its compression point. With the implementation of the circuit, lower P1dB values may be measured for a Class -AB amplifier, where the device will attempt to source more drain current while the circuit tr ies to provide a constant drain current. The circuit should be connected directly in line with where the voltage supplies would be normally connected with the amplifier circuit, as shown the diagram. Any required matching circuitry remains the same, alth ough it is not shown in the diagram. This recommended active -bias constant -current circuit adds 7 components to the parts count for implementation, but should cost only an extra $0.144 to realize ($0.10 for U1, $0.0029 for R1, R3, R4, R5, $0.024 for R2, a nd $0.0085 for C1). Temperature compensation is achieved by tracking the voltage variation with the temperature of the emitter -to-base junction of the two PNP transistors. As a 1st order approximation, this is achieved by using matched transistors with a pproximately the same Ibe current. Thus the transistor emitter voltage adjusts the HFET gate voltage so that the device draws a constant current, regardless of the temperature. A Rohm dual transistor - UMT1N - is recommended for cost, minimal board space requirements, and to minimize the variation between the two transistors. Minimizing the variability between the base -to-emitter junctions allow more accuracy in setting the current draw. More details can be found in a separate application note “Active -bias Constant -current Source Recommended for HFETs” found on the WJ website. Parameter FP2189 Pos Supply, Vdd +8 V Neg Supply, Vgg -5 V Vds +7.75 V Ids 250 mA R1 62 Ω R2 1.0 Ω R3 1.8 kΩ R4 1 kΩ R5 1 kΩ *R2 should be of size 0805 to dissipate 0.0625 Watts. This should be of 1% tolerance. Two 2.0 Ω resistors in parallel of size 0603 can also be used. 1 kΩ -Vgg +Vdd Rohm UMT1N RF IN RF OUT DUT M.N. M.N. .01 µF

Specifications and information are subject to change without notice. WJ Communications, Inc • Phone 1-800- WJ1-4401 • FAX: 408-577-6621 • e- mail: sales@wj.com • Web site: www.wj.com September 2004 FP2189 1 - Watt HFET Product Information FP2189 (SOT-89 Package) Mechanical Information This package may contain lead-bearing materials. The plating material on the leads is SnPb. Outline Drawing Land Pattern Thermal Specifications Parameter Rating Operating Case Temperature -40 to +85°C Thermal Resistance, Rth (1) 35° C/W Junction Temperature, Tjc (2) 155° C 1. The thermal resistance is referenced from the hottest part of the junction to the ground tab (pin 4). 2. This corresponds to the typical drain biasing condition of +8V, 250 mA at an 85 °C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 160 °C. Product Marking The FP2189 will be marked with an “FP2189” designator. An alphanumeric lot code (“XXXX -X”) is also marked below the part designator on the top surface of the package. Tape and reel specifications for this part are located on the website in the “Application Notes” section. MSL / ESD Rating ESD Rating: Class 1B Value: Passes /500V to <1000V Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114 ESD Rating: Class IV Value: Passes at 2000 V min. Test: Charged Device Model (CDM) Standard: JEDEC Standard JESD22-C101 MSL Rating: Level 3 at +235° C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and have a final plated thru diameter of .25 mm (.010”). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put sol der mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. MTTF vs. GND Tab Temperature 100 60 70 80 90 100 110 120 Tab Temperature (°C) MTTF (million hrs)

Specifications and information are subject to change without notice. WJ Communications, Inc • Phone 1-800- WJ1-4401 • FAX: 408-577-6621 • e- mail: sales@wj.com • Web site: www.wj.com September 2004 FP2189 1 - Watt HFET Product Information FP2189-G (Green / Lead-free SOT-89 Package) Mechanical Information This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260°C reflow temperature) and leaded (maximum 245°C reflow temperature) soldering processes. The plating material on the leads is NiPdAu. Outline Drawing Land Pattern Thermal Specifications Parameter Rating Operating Case Temperature -40 to +85°C Thermal Resistance, Rth (1) 35° C/W Junction Temperature, Tjc (2) 155° C 1. The thermal resistance is referenced from the hottest part of the junction to the ground tab (pin 4). 2. This corresponds to the typical drain biasing condition of +8V, 250 mA at an 85 °C case t emperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 160 °C. Product Marking The FP2189 -G will be marked with an “FP21G” designator. An alphanumeric lot code (“XXXX -X”) is also marked below the part designator on th e top surface of the package. Tape and reel specifications for this part are located on the website in the “Application Notes” section. MSL / ESD Rating ESD Rating: Class 1B Value: Passes /500V to <1000V Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114 ESD Rating: Class IV Value: Passes at 2000 V min. Test: Charged Device Model (CDM) Standard: JEDEC Standard JESD22-C101 MSL Rating: Level 3 at +260° C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and have a final plated thru diameter of .25 mm (.010”). 2. Add as much copper as possible to inner and outer layers near th e part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. MTTF vs. GND Tab Temperature 100 60 70 80 90 100 110 120 Tab Temperature (°C) MTTF (million hrs)