AP504 WJCI | Alldatasheet

Document overview

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Technical content

Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 1 of 5 April 2007 AP504 DCS-band 4W HBT Amplifier Module Product Features 1705 – 1790 MHz

  • 31.5 dB Gain
  • +25 dBm CDMA2k 7fa Power (-63 dBc ACPR)
  • +12 V Single Supply
  • Power Down Mode
  • Bias Current Adjustable
  • RoHS-compliant flange-mount pkg

Applications

Final stage amplifiers for Repeaters

  • Optimized for driver amplifier PA mobile infrastructure Product Description The AP504 is a high dynamic range power amplifier i n a RoHS-compliant flange-mount package. The multi-sta ge amplifier module has 31.5 dB gain. The module has been internally optimized for linearity to provide +25 d Bm (-63 dBc ACPR) linear power for 7-carrier CDMA2000 applications. The AP504 uses a high reliability InGaP/GaAs HBT process technology and does not require any externa l matching components. The module operates off of a +12V supply and does not requiring any negative biasing voltages; an internal active bias allows the amplifier to mai ntain high linearity over temperature. It has the added featu re of a +5V power down control pin. While the module has b een tuned for optimal performance for Class AB applicat ions, the quiescent current can also be adjusted for Clas s B applications through an external resistor. A low-c ost metal housing allows the device to have a low thermal res istance and achieves over 100 years MTTF. All devices are 100% RF and DC tested. The AP504 is targeted for use as a driver or final stage amplifier in wireless infrastructure where high lin earity and high power is required. This combination makes the device an excellent candidate for next generation multi-ca rrier 3G base stations using the DCS1800 frequency band. Functional Diagram Top View Pin No. Function

1 RF Output

6 RF Input

Specifications (1) 25 ºC, V cc =12V, V pd =5V, I cq =835mA, R7=0 Ω, 50 Ω unmatched fixture Parameter Units Min Typ Max Test Conditions Operational Bandwidth MHz 1705 – 1790 Test Frequency MHz 1765 Adjacent Channel Power Ratio dBc -63.2 -61 CDMA200 0 7 fa 25 dBm Total Power, 885 kHz offset Power Gain dB 30.5 31.5 35.5 Pout = +25 dBm Input Return Loss dB 11 Output Return Loss dB 5 Output P1dB dBm +36 Output IP3 dBm +52 Pout = +23 dBm/tone, ∆f = 1 MHz Operating Current (2) mA 790 850 940 Pout = +25 dBm Quiescent Current, Icq (2) mA 780 835 920 Device Voltage, Vcc V +12 Device Voltage, Vpd V +5 Pull-down voltage: 0V = “OFF”, 5V=”ON” Load Stability VSWR 10:1 1. Test conditions unless otherwise noted: 25ºC. 2. The current can be adjusted through an external resistor from the 5V supply to the pull-down voltage pin (pin 3). Absolute Maximum Rating Parameter Rating Operating Case Temperature -40 to +85 °C Storage Temperature -55 to +150 °C RF Input Power (continuous) with output terminated in 50 Ω +15 dBm Operation of this device above any of these parameters may cause permanent damage.

Ordering Information

Part No. Description AP504 DCS-band 4W HBT Amplifier Module AP504-PCB Fully-Assembled Evaluation Board (Class AB configuration, Icq=835mA) 1 2 3 4 5 6

Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 2 of 5 April 2007 AP504 DCS-band 4W HBT Amplifier Module Performance Graphs – Class AB Configuration (AP504- PCB) The AP504-PCB and AP504 module is configured for Class AB by default. The resistor – R7 – which sets the current draw for the amplifier is set at 0 Ω in this configuration. Increasing that value will decrease the quiescent and operating current of th e amplifier module, as described on the next page. Notes: 1. Please note that for reliable operation, the evaluation board will have to be mounted to a much larger heat sink during operation and in laboratory environments to dissipate the power consumed by the device. The use of a convection fan is also recommende d in laboratory environments. Details of the mounting holes us ed in the WJ heatsink are given on the last page of this datasheet. 2. The area around the module underneath the PCB should not c ontain any soldermask in order to maintain good RF grounding. 3. For proper and safe operation in the laboratory, the power -on sequencing should be followed: 1. Connect RF In and Out 2. Connect the voltages and ground pins as shown in the circuit. 3. Apply the RF signal 4. Power down with the reverse sequence Gain +25 ° C, 12Vcc, Icq=850mA 1700 1720 1740 1760 1780 1800 Frequency (MHz) G a in (d B ) Return Loss +25 ° C, Vcc=12V, Icq=850mA -25 -20 -15 -10 1700 1720 1740 1760 1780 1800 Frequency (MHz) M a g n itu d e (d B ) S11 S22 Gain vs. Temp

1765 MHz, Vcc=12V, Icq=850mA

-40 -20 0 20 40 60 80 Temperature (° C) G a in (d B ) ACPR vs. Output Power vs. Temp CDMA2000 SR1, 7 FA , fc=1765 MHz, ∆∆ ∆∆ f=±885 kHz, Vcc=12V, Icq=850mA -70 -65 -60 -55 -50 18 20 22 24 26 28 Total Output Power (dBm) A C P R (d B c ) -40 ° C +25 ° C +85 ° C ACPR vs. Output Power vs. Temp CDMA2000 SR1, 7 FA , fc=1765 MHz, ∆∆ ∆∆ f=±1.98 MHz, Vcc=12V, Icq=850mA -70 -65 -60 -55 -50 18 20 22 24 26 28 Total Output Power (dBm) A C P R (d B c ) -40 ° C +25 ° C +85 ° C ACPR vs. Frequency vs. Temp CDMA2000 SR1, 7 FA , ∆∆ ∆∆ f=±885 kHz, 25 dBm Pout, Vcc=12V, Icq=850mA -70 -65 -60 -55 -50 1750 1760 1770 1780 Frequency (MHz) A C P R (d B c ) -40 ° C +25 ° C +85 ° C DNP DNP DNP DNP DNP DNP DNP DNP DNP 0Ω 0Ω 0Ω 0Ω 10 µ F .01 µ F .01 µ F 100pF 100pF +12V +12V GND +5V 6 5 4 2 3 1 RF IN RF OUT

Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 3 of 5 April 2007 AP504 DCS-band 4W HBT Amplifier Module Performance Graphs (cont’d) ACPR vs. Output Power CDMA2000 SR1, 1 FA , fc=1765 MHz, +25 °° °°C, Vcc=12V, Icq=850mA -90 -80 -70 -60 18 20 22 24 26 Total Output Power (dBm) A C P R (d B c )

1.98 MHz offset

Icc vs. Output Power Output Channel Power (dBm) Icc (m A ) Icc / PAE vs. Output Power

1765 MHz, +25 ° C, Vcc=12V, Icq=850mA

0.2 0.4 0.6 0.8 20 22 24 26 28 30 32 34 Output Power (dBm) Ic c (m A ) / P A E PAE Icc Output Power / Gain vs. Input Power -4 -2 0 2 4 6 Input Power (dBm) G a in (d B ) / P o u t (d B m ) Pout Gain IMD vs. Output Power per tone -80 -70 -60 -50 -40 -30 18 20 22 24 26 28 Output Power per tone (dBm) IM D (d B ) IMD3_Upper IMD3_Lower IMD5 OIP3 vs. Output Power per tone Output Power per tone (dBm) O IP 3 (d B m )

Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 4 of 5 April 2007 AP504 DCS-band 4W HBT Amplifier Module MTTF Calculation The MTTF of the AP504 can be calculated by first determining how much power is being dissipated by t he amplifier module. Because the device’s intended ap plication is to be a power amplifier pre-driver or final stag e output amplifier, the output RF power of the amplifier wil l help lower the overall power dissipation. In addition, the amplifier can be biased with different quiescent cu rrents, so the calculation of the MTTF is custom to each application. The power dissipation of the device can be calculat ed with the following equation: Pdiss = V cc * I cc – (Output RF Power – Input RF Power), Vcc = Operating supply voltage = 12V Icc = Operating current {The RF power is converted to Watts} While the maximum recommended case temperature on t he datasheet is listed at 85 ˚C, it is suggested that customers maintain an MTTF above 1 million hours. This would convert to a derating curve for maximum case temperature vs. power dissipation as shown in the plot below. Maximum Recommended Case Temperature vs. Power Dissipation to maintain 1 million hours MTTF 4 5 6 7 8 9 10 11 12 Power Dissipation (Watts) Maximum Case Temperature (° C) To calculate the MTTF for the module, the junction temperature needs to be determined. This can be ea sily calculated with the module’s power dissipation, the thermal resistance value, and the case temperature of operation: T j = P diss * R th + T case T j = Junction temperature P diss = Power dissipation (calculated from above) R th = Thermal resistance = 9 ˚C/W T case = Case temperature of module’s heat sink From a numerical standpoint, the MTTF can be calcul ated using the Arrhenius equation: MTTF = A* e (Ea/k/Tj) A = Pre-exponential Factor = 6.087 x 10 -11 hours Ea = Activation Energy = 1.39 eV k = Boltzmann’s Constant = 8.617 x 10 -5 eV/ ºK Tj = Junction Temperature (ºK) = T j (ºC) + 273 A graphical view of the MTTF can be shown in the pl ot below. MTTF vs. Junction Temperature 1.E+05 1.E+06 1.E+07 130 140 150 160 170 180 Junction Temperature (° C) MTTF (hours)

Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 5 of 5 April 2007 AP504 DCS-band 4W HBT Amplifier Module Outline Drawing 2 3 4 5 61 AP504 Outline Drawing for the Heatsink with the WJ Evaluation Board Product Marking The device will be marked with an “AP504” designato r with an alphanumeric lot code on the top surface of the package noted as “ABCD” on the drawing. A manufacturing date will also be printed as “XXYY”, where the “XX” represents the week number from 1 – 52. The product will be shipped in tubes in multiples of 15. ESD / MSL Information ESD Rating: Class 1C Value: Passes at ≥ 1,000 to < 2,000 volts Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114 ESD Rating: Class III Value: Passes ≥ 500 to < 1,000 volts Test: Charged Device Model (CDM) Standard: JEDEC Standard JESD22-C101