FO08NG-C DOINGTER | Alldatasheet
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Technical content
www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=650V,ID=8A,RDS(ON)<1.4Ω@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V ID Continuous Drain Current- TC=25℃ 8 A Continuous Drain Current-TC=100℃ 4.4 Pulsed Drain Current1 28 EAS Single Pulse Avalanche Energy2 247 mJ PD Power Dissipation 32.9 W IAR 8 A EAR 18 MJ Dv/dt 5 TJ, TSTG Operating and Storage Junction Temperature Range -55-+150 ℃ Thermal Characteristics： Repetitive Avalanche Energy Peak Diode Recovery dv/ Avalanche Current 1 G D S FO08NG-C A ll data sheet.com
www.doingter.cn — 2 — Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 3.8 ℃/W RƟJA Thermal Resistance,Junction to Ambient 43.3 Package Marking and Ordering Information： Part NO. Marking Package O08N TO-220F Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 650 --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=650V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±30V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 2 --- 4 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=4A --- 1.1 1.4 Ω GFS Forward Transconductance VDS=40V, ID=4A --- 7 --- S Dynamic Characteristics Ciss Input Capacitance VDS=25V, VGS=0V, f=1MHz --- 800 --- pF Coss Output Capacitance --- 101 --- Crss Reverse Transfer Capacitance --- 1.5 --- Switching Characteristics td(on) Turn-On Delay Time VDD=325V, ID=8A, RGEN=25Ω. --- 12 --- ns tr Rise Time --- 26 --- ns td(off) Turn-Off Delay Time --- 29 --- ns tf Fall Time --- 27 --- ns Qg Total Gate Charge VGS=10V, VDS=520V, ID=8A --- 15.6 --- nC Qgs Gate-Source Charge --- 4.8 --- nC --- FO08NG-C FO08NG-C A ll data sheet.com
Figure 11. Transient Thermal Response Curve