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Technical content

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easy to use (more controllabe switching dV/dt by Rg)

Applications

Outline Drawings [mm] Equivalent circuit schematic Gate(G) Source(S) Drain(D) CONNECTION ① GATE ② DRAIN ③ SOURCE DIMENSIONS ARE IN MILLIMETERS.ᶃ ᶄ ᶅ ᶃ ᶄ ᶅ TO-247-P2 http://www.fujielectric.com/products/semiconductor/ Maximum Ratings and Characteristics Absolute Maximum Ratings at T C=25°C (unless otherwise specified) Description Symbol Characteristics Unit Remarks Drain-Source Voltage VDS 600 V VDSX 600 V VGS=-30V Continuous Drain Current ID ±20 A Tc=25°C Note*1 ±12.6 A Tc=100°C Note*1 Pulsed Drain Current IDP ±60 A Gate-Source Voltage VGS ±30 V Repetitive and Non-Repetitive Maximum Avalanche Current IAR 6.6 A Note *2 Non-Repetitive Maximum Avalanche Energy EAS 472.2 mJ Note *3 Maximum Drain-Source dV/dt dVDS/dt 50 kV/μs VDS≤ 600V Peak Diode Recovery dV/dt dV/dt 15 kV/μs Note *4 Peak Diode Recovery -di/dt -di/dt 100 A/μs Note *5 Maximum Power Dissipation PD

2.5 W Ta=25°C

140 Tc=25°C

Operating and Storage Temperature range Tch 150 °C Tstg -55 to +150 °C Note *1 : Limited by maximum channel temperature. Note *2 : Tch≤150°C, See Fig.1 and Fig.2 Note *3 : Starting T ch=25°C, IAS=2A, L=216mH, V DD=60V, RG=50Ω, See Fig.1 and Fig.2 EAS limited by maximum channel temperature and avalanche current. Note *4 : IF≤-ID, -di/dt=100A/μs, V DD≤400V, Tch≤150°C. Note *5 : IF≤-ID, dV/dt=15kV/μs, VDD≤400V, Tch≤150°C.

http://www.fujielectric.com/products/semiconductor/ Electrical Characteristics at T C=25°C (unless otherwise specified) Static Ratings Description Symbol Conditions min. typ. max. Unit Drain-Source Breakdown Voltage BVDSS ID=250μA VGS=0V 600 - - V Gate Threshold Voltage VGS(th) ID=250μA VDS=VGS 2.5 3 3.5 V Zero Gate Voltage Drain Current IDSS VDS=600V VGS=0V Tch=25°C - - 25 μA VDS=480V VGS=0V Tch=125°C - - 250 Gate-Source Leakage Current IGSS VGS= ± 30V VDS=0V - 10 100 nA Drain-Source On-State Resistance RDS(on) ID=10A VGS=10V - 0.161 0.19 Ω Gate resistance RG f=1MHz, open drain - 3.7 - Ω Forward Transconductance gfs ID=10A VDS=25V 8.5 17.5 - S Input Capacitance Ciss VDS=10V VGS=0V f=1MHz - 1470 - pF Output Capacitance Coss - 3120 - Reverse Transfer Capacitance Crss - 280 - Effective output capacitance, energy related (Note *6) Co(er) VGS=0V VDS=0…480V - 90 - Effective output capacitance, time related (Note *7) C o(tr) VGS=0V VDS=0…480V ID=constant - 305 - Turn-On Time td(on) VDD=400V, VGS=10V ID=10A, RG=27Ω See Fig.3 and Fig.4 - 22 - nstr - 40 - Turn-Off Time td(off) - 162 - tf - 22 - Total Gate Charge QG VDD=480V, ID=20A VGS=10V See Fig.5 - 48 - nCGate-Source Charge QGS - 12.5 - Gate-Drain Charge QGD - 15 - Drain-Source crossover Charge QSW - 8 - Avalanche Capability IAV L=6.02mH,Tch=25°C See Fig.1 and Fig.2 6.6 - - A Diode Forward On-Voltage VSD IF=20A,VGS=0V Tch=25°C - 0.9 1.35 V Reverse Recovery Time trr IF=20A, VGS=0V VDD=400V -di/dt=100A/μs Tch=25°C See Fig.6 370 - ns Reverse Recovery Charge Qrr - 6.2 - μC Peak Reverse Recovery Current Irp - 32 - A Thermal Characteristics Description Symbol min. typ. max. Unit Channel to Case Rth(ch-c) 0.89 °C/W Channel to Ambient Rth(ch-a) 50 °C/W Note *6 : Co(er) is a fixed capacitance that gives the same stored energy as C oss while VDS is rising from 0 to 80% BV DSS. Note *7 : Co(tr) is a fixed capacitance that gives the same charging times as C oss while VDS is rising from 0 to 80% BV DSS.

http://www.fujielectric.com/products/semiconductor/ 0 25 50 75 100 125 150 100 120 140 Allowable Power Dissipation PD= f(TC) PD [W] TC [°C] ID [A] VDS [V] Safe Operating Area I D= f(VDS): Duty=0(Single pulse), TC=25°C 1µs 10µs 1ms 100µs 0 5 10 15 20 25 20V10V 6.5V 5.5V ID [A] VDS [V] Typical Output Characteristics ID= f(VDS): 80µs pulse test, Tch=25°C VGS=4.5V 0 5 10 15 20 25 8V 20V10V 5.5V 4.5V ID [A] VDS [V] Typical Output Characteristics ID= f(VDS): 80µs pulse test, Tch=150°C VGS=4V 0 5 10 15 20 25 30 35 40 45 50 55 60 0.0 0.1 0.2 0.3 0.4 0.5 0.6 8V6V5.5V5V 6.5V4.5V RDS(on) [ Ω ] ID [A] Typical Drain-Source on-state Resistance RDS(on)= f(ID): 80µs pulse test, Tch=25°C 10V VGS=20V 0 5 10 15 20 25 30 35 40 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 5.5V 5V4.5V RDS(on) [ Ω ] ID [A] Typical Drain-Source on-state Resistance R DS(on)= f(ID): 80µs pulse test, Tch=150°C 10V VGS=20V t PD Power loss waveform : Square waveform t PD t PD Power loss waveform : Square waveform

http://www.fujielectric.com/products/semiconductor/ -50 -25 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 RDS(on) [ Ω ] Tch [°C] typ. max. Drain-Source On-state Resistance RDS(on)= f(Tch): ID=10A, VGS=10V -50 -25 0 25 50 75 100 125 150 typ. Gate Threshold Voltage vs. Tch VGS(th)= f(Tch): VDS=VGS, ID=250µA VGS(th) [V] Tch [°C] C [pF] VDS [V] Typical Capacitance C= f(V DS): VGS=0V, f=1MHz Crss Coss Ciss 0 1 2 3 4 5 6 7 8 9 10 1E-3 0.01 0.1 100 Tch=25℃150℃ ID[A] VGS[V] Typical Transfer Characteristic ID= f(VGS): 80µs pulse test, VDS=25V 0.1 100 Tch=25℃150℃ IF [A] VSD [V] Typical Forward Characteristics of Reverse Diode IF= f(VSD): 80µs pulse test 0.1 1 10 100 0.1 100 150℃ Tch=25℃ gfs [S] ID [A] Typical Transconductance g fs= f(ID): 80µs pulse test, VDS=25V

http://www.fujielectric.com/products/semiconductor/ 0 100 200 300 400 500 600 Typical Coss stored energy Eoss [uJ] VDS [V] 0 10 20 30 40 50 60 Qg [nC] Typical Gate Charge Characteristics VGS= f(Qg): ID=20A, Vdd=480V, Tch=25°C VGS [V] Transient Thermal Impedance Zth(ch-c)= f(t): D=0 Zth(ch-c) [°C/W] t [sec] Typical Switching Characteristics vs. ID Tch=25°C t= f(ID): Vdd=400V, VGS=10V/0V, RG=27Ω, L=500uH td(on) tr tf td(off) t [ns] ID [A] 0 25 50 75 100 125 150 100 150 200 250 300 350 400 450 500 IAS=6.6A IAS=4A IAS=2A EAV [mJ] starting Tch [°C] Maximum Avalanche Energy vs. startingTch E(AV)= f(starting Tch): VCC=60V, I(AV)<=6.6A

http://www.fujielectric.com/products/semiconductor/ Manufacturer Code No. Logo Type :./// Type Name Lot No. Symbol Mark of "Lead-Free" Y : Last digit of year M : Month code 1~9 and O,N,D NNN : Lot serial number * The font (font type,size) and the logo type size might be actually different. IG hf : Halogen-free mark CONNECTION ① GATE ② DRAIN ③ SOURCE DIMENSIONS ARE IN MILLIMETERS. ᶃ ᶄ ᶅ ᶃ ᶄ ᶅ Outview: TO-247-P2 Package Marking

http://www.fujielectric.com/products/semiconductor/ WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of February 2012. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements.

  • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment
  • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty.
  • Transportation equipment (mounted on cars and ships) • Trunk communications equipment
  • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature
  • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices
  • Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation).
  • Space equipment • Aeronautic equipment • Nuclear control equipment
  • Submarine repeater equipment 7. Copyright ©1996-2011 by Fuji Electric Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd. 8. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein.