FMV23N50E FUJI | Alldatasheet

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Technical content

Features

Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller V GS ringing waveform during switching Narrow band of the gate threshold volta ge (3.0± 0.5V) High avalanche durability

Applications

UPS (Uninterruptible Power Supply) DC-DC converters Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25 °C (unless otherwise specified) Description Symbol Characteristics Unit Remarks Drain-Source Voltage VDS 500 V VDSX 500 V VGS = -30V Continuous Drain Current ID ±23 A Pulsed Drain Current IDP ±92 A Gate-Source Voltage VGS ±30 V Repetitive and Non-Repetitive Maximum Avalanche Current IAR 23 A Note*1 Non-Repetitive Maximum Avalanche Energy EAS 767.3 mJ Note*2 Repetitive Maximum Avalanche Energy EAR 13 mJ Note*3 Peak Diode Recovery dV/dt dV/dt 9.3 kV/µs Note*4 Peak Diode Recovery -di/dt -di/dt 100 A/µs Note*5 Maximum Power Dissipation PD

2.16 W Ta=25°C

130 Tc=25°C

Operating and Storage Temperature range Tch 150 °C Tstg -55 to +150 °C Isolation Voltage VISO 2 kVrms t = 60sec, f = 60Hz Outline Drawings [mm] Equivalent circuit schematic Electrical Characteristics at Tc=25 °C (unless otherwise specified) Description Symbol Conditions min. typ. max. Unit Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 500 - - V Gate Threshold Voltage VGS (th) ID=250µA, VDS=VGS 2.5 3.0 3.5 V Zero Gate Voltage Drain Current IDSS VDS=500V, VGS=0V Tch =25°C - - 25 µAVDS=400V, VGS=0V Tch =125°C - - 250 Gate-Source Leakage Current IGSS VGS=±30V, VDS=0V - 10 100 nA Drain-Source On-State Resistance RDS (on) ID=11.5A, VGS=10V - 0.21 0.245 Ω Forward Transconductance gfs ID=9.5A, V DS=25V 10 20 - S Input Capacitance Ciss VDS=25V VGS=0V f=1MHz - 3600 5400 pFOutput Capacitance Coss - 310 465 Reverse Transfer Capacitance Crss - 23 35 Turn-On Time td(on) Vcc =300V VGS=10V ID=9.5A RGS=8.2Ω - 26 39 nstr - 13 20 Turn-Off Time td(off) - 150 225 tf - 20 30 Total Gate Charge QG Vcc =300V ID=19A VGS=10V - 105 160 nCGate-Source Charge QGS - 23 35 Gate-Drain Charge QGD - 30 45 Avalanche Capability IAV L=1.71mH, Tch=25°C 19 - - A Diode Forward On-Voltage VSD IF=19A, VGS=0V, Tch =25°C - 0.90 1.35 V Reverse Recovery Time trr IF=19A, VGS=0V -di/dt=100A/ µs, Tch=25°C - 0.6 - µs Reverse Recovery Charge Qrr - 10 - µC Note *1 : Tch ≤150°C Note *2 : Stating Tch=25°C, I AS=8A, L=22.9mH, Vcc=60V, R G=50Ω EAS limited by maximum channel temperature and avalanche current. See to 'Avalanche Energy' graph. Thermal Characteristics Description Symbol Test Conditions min. typ. max. Unit Thermal resistance Rth (ch-c) Channel to Case 0.96 °C/W Rth (ch-a) Channel to Ambient 58.0 °C/W Gate(G) Source(S) Drain(D) Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. See to the 'Transient Themal impeadance' graph . Note *4 : I F≤-ID, -di/dt=100A/ µs, Vcc≤BVDSS, Tch≤150°C. Note *5 : I F≤-ID, dv/dt=5.0kV/ µs, Vcc≤BVDSS, Tch≤150°C. TO-220F(SLS)

0.1 100 ID[A] VGS[V] Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C 0.1 1 10 100 0.1 100 gfs [S] ID [A] Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C 0 25 50 75 100 125 150 100 120 140 Allowable Power Dissipation PD=f(Tc) PD [W] Tc [°C] 0 10 20 30 40 50 60 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 RDS(on) [ ] ID [A] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25 °C 10V 5.5V 6.0V 5.0V VGS=4.5V 0 4 8 12 16 20 24 ID [A] VDS [V] Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C t PD Power loss waveform : Square waveform t PD t PD Power loss waveform : Square waveform ID [A] VDS [V] Safe Operating Area ID=f(VDS):Duty=0(Single pulse),Tc=25 °c 1µs 10µs 1ms 100µs D.C. 10V 6.0V 5.5V 5.0V VGS=4.5V Ω

FUJI POWER MOSFETFMV23N50E 0 20 40 60 80 100 120 140 Qg [nC] Typical Gate Charge Characteristics VGS=f(Qg):ID=23A,Tch=25 °C VGS [V] 400V 250V Vcc= 100V C [pF] VDS [V] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Crss Coss Ciss Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=5.6 Ω td(on) tr tf td(off) t [ns] 0.1 100 IF [A] VSD [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25 °C -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 typ. max. min. Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µA VGS(th) [V] Tch [°C] -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 RDS(on) [ ] Tch [ typ. max. Drain-Source On-state Resistance RDS(on)=f(Tch):ID=11.5A,VGS=10V Ω °C] ID [A]

MaximumTransientThermalImpedance Zth(ch-c)=f(t):D=0 Zth(ch-c) [°C/W] t[sec] 0 25 50 75 100 125 150 100 200 300 400 500 600 700

800 IAS=23A

IAS=14A IAS=10A EAV[mJ] startingTch[°C] MaximumAvalancheEnergyvs.startingTch E(AV)=f(startingTch):Vcc=50V,I(AV)<=23A

FUJI POWER MOSFETFMV23N50E WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements.

  • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment
  • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Device Technology Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty.
  • Transportation equipment (mounted on cars and ships) • Trunk communications equipment
  • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature
  • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices
  • Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation).
  • Space equipment • Aeronautic equipment • Nuclear control equipment
  • Submarine repeater equipment 7. Copyright ©1996-2008 by Fuji Electric Device Technology Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Device Technology Co., Ltd. 8. If you have any question about any portion in this Catalog, ask Fuji Electric Device Technology Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Device Technology Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein.