FMQT4292 JIANGSU | Alldatasheet

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Technical content

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-08A Plastic-Encapsulate Transistors FMQT4292 TRANSISTOR

DESCRIPTION

PNP and NPN Epitaxial Silicon Transistor

FEATURES

z Complementary Pair z Tow A42-Type NPN, Tow A92-Type PNP z Epitaxial Planar Die Construction APPLICATION IDEAL FOR LOW POWER AMPLIFICATION AND SWITCHING For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING: 4292 4292 A42 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 310 V VCEO Collector-Emitter Voltage 305 V VEBO Emitter-Base Voltage V IC Collector Current -Continuous 500 mA TJ, Tstg Junction and Storage Temperature -55-150 RӨJA Thermal Resistance, junction to Ambient 200 ℃/mW RӨJC Thermal Resistance, unction to Case 83.3 ℃/mW A92 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage V IC Collector Current -Continuous -500 mA TJ, Tstg Junction and Storage Temperature -55-150 RӨJA Thermal Resistance, junction to Ambient 200 ℃/mW RӨJC Thermal Resistance, unction to Case 83.3 ℃/mW WBFBP-08A (4×4×0.5) unit: mm

A42 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100µA, IE=0 310 V Collector-emitter breakdown voltage V(BR)CEO Ic= 1 mA, IB=0 305 V Emitter-base breakdown voltage V(BR)EBO IE= 100µA, IC=0 V Collector cut-off current ICBO VCB=200V, IE=0 0.25 µA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 µA HFE(1) VCE= 10V, IC= 1mA HFE(2) VCE= 10V, IC=10mA 100 200 DC current gain HFE(3) VCE=10V, IC=30mA Collector-emitter saturation voltage VCE(sat) IC=20 mA, IB= 2mA 0.2 V Base-emitter saturation voltage VBE(sat) IC= 20 mA, IB=2mA 0.9 V Transition frequency fT VCE= 20V, IC= 10mA f=30MHz MHz A92 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -100µA, IE=0 -300 V Collector-emitter breakdown voltage V(BR)CEO Ic= -1mA, IB=0 -300 V Emitter-base breakdown voltage V(BR)EBO IE= -100µA, IC=0 V Collector cut-off current ICBO VCB=-200V, IE=0 -0.25 µA Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 µA HFE(1) VCE= -10V, IC= -1mA HFE(2) VCE= -10V, IC=-10mA 100 200 DC current gain HFE(3) VCE= -10V, IC=-30mA Collector-emitter saturation voltage VCE(sat) IC=-20 mA, IB= -2mA -0.2 V Base-emitter saturation voltage VBE(sat) IC= -20 mA, IB= -2mA -0.9 V Transition frequency fT VCE=-20V, IC= -10mA f=30MHz MHz

Min. Max. Min. Max. A 0.450 0.550 0.018 0.022 0.000 0.100 0.000 0.004 b 0.350 0.450 0.014 0.018 D 3.900 4.100 0.154 0.161 E 3.900 4.100 0.154 0.161 e L k z 0.300 REF. 0.012 REF. 0.300 REF. 0.012 REF. 0.044 REF. 0.900 REF. 0.900 REF. 0.035 REF. 0.035 REF. 0.450 REF. 0.018 REF. Symbol Dimensions In Millimeters Dimensions In Inches 1.000 TYP. 0.040 TYP. 1.120 REF. 0.044 REF. 1.120 REF.