FMMT4124 HTSEMI | Alldatasheet
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Switching Application MARKING:ZC MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current 200 mA PC Collector Power Dissipation 330 mW RΘJA Thermal Resistance From Junction To Ambient 378 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=10µA, IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO* IC=1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=10µA, IC=0 5 V Collector cut-off current ICBO VCB=20V, IE=0 50 nA Emitter cut-off current IEBO VEB=3V, IC=0 50 nA hFE(1) * VCE=1V, IC=2mA 120 360 DC current gain hFE(2) * VCE=1V, IC=50mA 60 Collector-emitter saturation voltage VCE(sat)* IC=50mA, IB=5mA 0.3 V Base-emitter saturation voltage VBE(sat)* IC=50mA, IB=5mA 0.95 V Transition frequency fT VCE=20V,IC=10mA, f=100MHz
300 MHz
Collector output capacitance Cob VCB=5V, IE=0, f=140KHz 4 pF Emitter input capacitance CIb VBE=0.5V, IE=0, f=140KHz 8 pF *Pulse test SOT–23 1. BASE 2. EMITTER 3. COLLECTOR TRANSISTOR (NPN) FMMT4124 Date:2011/05 www.htsemi.comsemiconductor JinYu