FMM5057VF

FMM5057VF FUJI | Alldatasheet

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Technical content

7.1-8.5GHz Power Amplifier MMIC

FEATURES

・High Output Power: 34.0dBm(typ.) ・High Linear Gain: 26.0dB(typ.) ・Low VSWR ・Broad Band: 7.1～8.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Small Hermetic Metal-Ceramic Package(VF)

DESCRIPTION

The FMM5057VF is a MMIC amplifier that contains a four-stage amplifier, internally matched, for standard communications band in the 7.1 to 8.5GHz frequency range. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25℃) Item Symbol Rating Unit DC Input Voltage DC Input Voltage Input Power Storage Temperature VDD VGG Pin Tstg -55 to +125 V V dBm ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25℃) CASE STYLE: VF G.C.P.:Gain Compression Point Edition 1.1 May 2003 1 Recommended Operating Condition FMM5057VF Item Symbol Condition Unit DC Input Voltage at Tc=25℃ Input Power at Tc=25℃ DC Input Current at Tc=25℃ Operating Case Temperature VDD Pin IDD Tc ≤1200 -40 to +85 V dBm mA ESD Class 0 ～199 V Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k Ω) Output Power at 1dB G.C.P. Limit Item Symbol Test Conditions Unit Frequency Range Power Gain at 1dB G.C.P. Gain Flatness Input VSWR f P1dB G1dB ΔG VSWRi GHz dB Min. Typ. Max. Output VSWR DC Input Current VSWRo IDD dBm dB mA 7.1 - 8.5 32.0 34.0 - 23.0 26.0 - - 2.4 4.0 - 2 : 1 2.6 : 1 - 2 : 1 - - 1100 1200 VDD=10V VGG=-5V f=7.1 to 8.5GHz VDD=10V,VGG=-5V DC Input Current IGG mA- 5.0 15.0 Channel Temperature Rise ΔTch - 50 - ℃ Note:G1dB is referenced to Linear Gain measured at Pin=-3dBm.

7.1-8.5GHz Power Amplifier MMIC OUTPUT POWER , POWER ADDED EFFICIENCY vs. INPUT POWEROUTPUT POWER vs. FREQUENCY VSWR vs. FREQUENCYIMD vs OUTPUT POWER VDD=10V, VGG=-5V 0.5 1.5 2.5 6.5 7 7.5 8 8.5 9 Frequency[GHz] VSWR INPUT OUTPUT VDD=10V,VGG=-5V 7 7.5 8 8.5 Frequency [GHz] Output Power [dBm] Pin=-5dBm Pin=+3dBm Pin=+11dBm P1dB VDD=10v,VGG=-5v -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 15 20 25 30 2-tone total Pout[dBm] Intermodulation Distortion [dBc] 7.1GHz 7.7GHz 8.5GHz IM5 IM3 FMM5057VF VDD=10V,VGG=-5V -10 -5 0 5 10 15 Input Power [dBm] Output Pow er [dBm ] Power Added Efficiency[%] 7.1GHz 7.7GHz 8.5GHz

7.1-8.5GHz Power Amplifier MMIC DRAIN CURRENT vs OUTPUT POWEROUTPUT POWER vs. DRAIN VOLTAGE DRAIN CURRENT vs OUTPUT POWER AMPM vs OUTPUT POWER VDD=10V,VGG=-5V -10 24 26 28 30 32 34 36 Output Power [dBm] ∆Phase [deg.] 7.1GHz 7.8GHz 8.5GHz VDD=10V, VGG=-5V 900 1000 1100 1200 1300 18 22 26 30 34 Output Power[dBm] Drai n Current[mA] 7.1GHz 7.7GHz 8.5GHz VGG=-5V,f=7.7GHz 7.5 8 8.5 9 9.5 10 10.5 Drain Voltage,VDD[V] Output Power [dBm] Pin=-5dBm Pin=+3dBm Pin=+11dBm P1dB VGG=-5V,f=7.7GHz 900 1000 1100 1200 1300 1400 18 22 26 30 34 Output Power[dBm] Drain Current[mA] VDD=8V VDD=9V VDD=10V FMM5057VF

7.1-8.5GHz Power Amplifier MMIC DRAIN CURRENT vs OUTPUT POWER OUTPUT POWER vs. GATE VOLTAGE OUTPUT POWER , POWER ADDED EFFICIENCY vs. INPUT POWER OUTPUT POWER , POWER ADDED EFFICIENCY vs. INPUT POWER VDD=10V,f=7.7GHz -10 -5 0 5 10 15 Input Power[dBm] Output Power[dBm] Pow er Added Efficiency[%] VGG=-5.5V VGG=-5V VGG=-4.5V VDD=10V,f=7.7GHz 800 900 1000 1100 1200 1300 1400 18 23 28 33 Output Power[dBm] Drain Current[mA] VGG=-5.5V VGG=-5V VGG=-4.5V VDD=10V,f=7.7GHz -6 -5.5 -5 -4.5 -4 Gate Voltage,VGG[V] Output Pow er[dBm ] Pin=-5dBm Pin=+3dBm Pin=+11dBm P1dB FMM5057VF VGG=-5 V,f=7 .7 GHz -10 -5 0 5 10 15 Input Power [dBm] Output Pow er [dBm ] PowerAddedEfficiency[% ] VDD=8V VDD=9V VDD=10V

7.1-8.5GHz Power Amplifier MMIC ■S-PARAMETER Frequency [GHz] MAG ANG MAG ANG MAG ANG MAG ANG S11 S21 S12 S22 VDD=10.0V, VGG=-5.0V S12 S21 0.1 0.075 40±180° 0° -90° +90° Scale for |S 21| Scale for | S 12| 7.8 8.5GHz 7.1 FMM5057VF S11 S22 8.5GHz 7.1 7.8 25Ω0 ∞ +10j +25j +50j +100j +250j -10j -25j -50j -100j -250j 10Ω

7.1-8.5GHz Power Amplifier MMIC ■Recommended Bias Circuit and Internal Block Diagram PIN ASSIGMENT 1 : VDD 2 : RF in 3 : VGG 4 : N.C. 5 : RF out 6 : VDD VGG VDD RFin VDD N.C. 50Ω 1000pF 50Ω 1000pF 50Ω 1000pF RFout Note 1: The RC networks are recommended on the bias supply lines, close to the package, to prevent video oscillations which could damage the module. Note 2: Bias point VDD can be connected at the input side or at the output. The two pins named VDD are internally connected. FMM5057VF

7.1-8.5GHz Power Amplifier MMIC ■Package Out Line PIN ASSIGMENT 1 : VDD 2 : RF in 3 : VGG 4 : N.C. 5 : RF out 6 : VDD Unit : mm 3 4 FMM5057VF

7.1-8.5GHz Power Amplifier MMIC For further information please contact : FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU QUANTUM DEVICES EUROPE LTD. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 2003 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0202M200 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: ・Do not put these products into the mouth. ・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by- products are dangerous to the human body if inhaled, ingested, or swallowed. ・Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FMM5057VF FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-23770226 FAX: +852-23763269 FUJITSU QUANTUM DEVICES LIMITED Business Development Division 11th Floor, Hachioji Daiichi-Seimei Bldg. 3-20-6 Myojin-cho Hachioji-city, Tokyo 192-0046, Japan TEL: +81-426-43-5885 FAX: +81-426-43-5582