FMC16N60E FUJI | Alldatasheet

Document overview

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Technical content

Features

Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold volta ge (3.0± 0.5V) High avalanche durability

Applications

UPS (Uninterruptible Power Supply) DC-DC converters Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25 °C (unless otherwise specified) Description Symbol Characteristics Unit Remarks Drain-Source Voltage VDS 600 V VDSX 600 V VGS = -30V Continuous Drain Current ID ±16 A Pulsed Drain Current IDP ±64 A Gate-Source Voltage VGS ±30 V Repetitive and Non-Repetitive Maximum Avalanche Current IAR 16 A Note*1 Non-Repetitive Maximum Avalanche Energy EAS 554.8 mJ Note*2 Repetitive Maximum Avalanche Energy EAR 27 mJ Note*3 Peak Diode Recovery dV/dt dV/dt 5.2 kV/µs Note*4 Peak Diode Recovery -di/dt -di/dt 100 A/µs Note*5 Maximum Power Dissipation PD

2.16 W Ta=25°C

270 Tc=25°C

Operating and Storage Temperature range Tch 150 °C Tstg -55 to + 150 °C Outline Drawings [mm] Equivalent circuit schematic Electrical Characteristics at Tc=25 °C (unless otherwise specified) Description Symbol Conditions min. typ. max. Unit Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 600 - - V Gate Threshold Voltage VGS (th) ID=250µA, VDS=VGS 2.5 3.0 3.5 V Zero Gate Voltage Drain Current IDSS VDS=600V, VGS=0V Tch =25°C - - 25 µAVDS=480V, VGS=0V Tch =125°C - - 250 Gate-Source Leakage Current IGSS VGS=±30V, VDS=0V - 10 100 nA Drain-Source On-State Resistance RDS (on) ID=8A, VGS=10V - 0.40 0.47 Ω Forward Transconductance gfs ID=8A, VDS=25V 10 20 - S Input Capacitance Ciss VDS=25V VGS=0V f=1MHz - 2650 3980 pFOutput Capacitance Coss - 230 345 Reverse Transfer Capacitance Crss - 17 25.5 Turn-On Time td(on) Vcc =300V VGS=10V ID=8A RGS=10Ω - 22 33 nstr - 10 15 Turn-Off Time td(off) - 120 180 tf - 20 30 Total Gate Charge QG Vcc =300V ID=16A VGS=10V - 76 114 nCGate-Source Charge QGS - 17 25.5 Gate-Drain Charge QGD - 22 33 Avalanche Capability IAV L=1.74mH, Tch =25°C 16 - - A Diode Forward On-Voltage VSD IF=16A, VGS=0V, Tch=25°C - 0.90 1.35 V Reverse Recovery Time trr IF=16A, VGS=0V -di/dt=100A/ µs, Tch=25°C - 0.7 - µs Reverse Recovery Charge Qrr - 9 - µC Note *1 : Tch ≤150°C Note *2 : Stating Tch=25°C, I AS=7A, L=20.8mH, Vcc=60V, R G=50Ω EAS limited by maximum channel temperature and avalanche current. See to 'Avalanche Energy' graph. Thermal Characteristics Description Symbol Test Conditions min. typ. max. Unit Thermal resistance Rth (ch-c) Channel to case 0.460 °C/W Rth (ch-a) Channel to ambient 62.0 °C/W Gate(G) Source(S) Drain(D) Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. See to the 'Transient Themal impeadance' graph . Note *4 : I F≤-ID, -di/dt=100A/ µs, Vcc≤BVDSS, Tch≤150°C. Note *5 : IF≤-ID, dv/dt=5.2kV/ µs, Vcc≤BVDSS, Tch≤150°C. T-Pack(S)

C 0 4 8 12 16 20 24 ID [A] VDS[V] TypicalOutput Characteristics ID=f(VDS):80 spulse test,Tch=25 C 2 3 4 5 6 7 0.1 100 ID[A] VGS[V] Typical TransferCharacteristic ID=f(VGS):80µs pulse test,VDS=25V,Tch=25°C 0.1 1 10 100 0.1 100 gfs[S] ID [A] Typical Transconductance gfs=f(ID):80 µs pulsetest,VDS=25V,Tch=25°C 0 5 10 15 20 25 30 0.3 0.4 0.5 0.6 0.7 0.8 RDS(on)[Ω] ID[A] TypicalDrain-Source on-state Resistance RDS(on)=f(ID):80µspulsetest,Tch=25° 10V 5.5V 5VVGS=4.5V t PD Power loss waveform : Square waveform t PDPD Power loss waveform : Square waveform ID [A] VDS[V] Safe Operating Area ID=f(VDS):Duty=0(Singlepulse),Tc=25°C 1 s 10 s 1ms 100 s D.C. 0 25 50 75 100 125 150 100 200 300 400 Allowable Power Dissipation PD=f(Tc) PD[W] Tc[°C] µ ° µ µ µ

FUJI POWER MOSFETFMC16N60E -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 RDS(on)[ ] Tch[°C] typ. max. Drain-Source On-state Resistance RDS(on)=f(Tch):ID=8A,VGS=10V -50 -25 0 25 50 75 100 125 150 typ. max. min. Gate ThresholdVoltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250 A VGS(th) [V] Tch[°C] 0 20 40 60 80 100 120 Qg [nC] Typical Gate ChargeCharacteristics VGS=f(Qg):ID=16A,Tch=25°C VGS [V] 480V 300V Vcc= 120V 0.1 100 IF[A] VSD [V] ID [A] Typical Forward Characteristics ofReverseDiode IF=f(VSD):80 µs pulse test,Tch=25°C Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10Ω td(on) tr tf td(off) t[ns] C [pF] VDS[V] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Crss Coss Ciss Ω µ

IAS=7A IAS=10A IAS=16A EAV [mJ] startingTch [°C] Maximum AvalancheEnergyvs. starting Tch E(AV)=f(startingTch):Vcc=60V,I(AV)<=16A MaximumTransient Thermal Impedance Zth(ch-c)=f(t):D=0 Zth(ch-c)[°C/W] t [sec]

FUJI POWER MOSFETFMC16N60E WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements.

  • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment
  • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Device Technology Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty.
  • Transportation equipment (mounted on cars and ships) • Trunk communications equipment
  • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature
  • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices
  • Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation).
  • Space equipment • Aeronautic equipment • Nuclear control equipment
  • Submarine repeater equipment 7. Copyright ©1996-2008 by Fuji Electric Device Technology Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Device Technology Co., Ltd. 8. If you have any question about any portion in this Catalog, ask Fuji Electric Device Technology Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Device Technology Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein.