FMB150

FMB150 ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982 - 1200 • FAX (818) 765 - 3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS T C = 25 O C SYMBOL NONE TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BV CBO IC = 100 mA 60 V BV CER IC = 100 mA R BE = 10 Ω 55 V BV CEO IC = 100 mA 25 V BV EBO IE = 20 mA 4.0 V h FE V CE = 5.0 V I C = 1.0 A 20 150 --- C OB V CB = 28 V f = 1.0 MHz 140 pF P G ηηC V CC = 28 V P OUT = 1 50 W f = 108 MHz 9.0 dB NPN SILICON RF POWER TRANSISTOR FMB150 DESCRIPTION: The ASI FMB150 is Designed for FEATURES:

• Omnigold ™ Metalization System MAXIMUM RATINGS IC 16 A V CBO 60 V V CEO 25 V V CES 60 V V EBO 4.0 V P DISS 230 W @ T C = 25 O C T J - 65 O C to +200 O C T ST G - 65 O C to +150 O C θθJC 1.1 O C/W PACKAGE STYLE .500 4L FLG ORDER CODE: ASI10588 MINIMUM inches / mm .220 / 5.59 .720 / 18.28 .125 / 3.18 .245 / 6.22 .970 / 24.64 B C D E F G A MAXIMUM .255 / 6.48 .980 / 24.89 .7.30 / 18.54 inches / mm .230 / 5.84 H .003 / 0.08 .007 / 0.18 DIM K L I J .090 / 2.29 .150 / 3.81 .980 / 24.89 .110 / 2.79 .175 / 4.45 1.050 / 26.67 H I K J .112x45° FULL R C E B G D F A L Ø.125 NOM. .125 / 3.18 .495 / 12.57 .505 / 12.83 .280 / 7.11