FM200TU-07A

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100 Amperes/75 Volts

107/12 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Description: Powerex MOSFET Modules are designed for use in low voltage switching applications. Each module consists of 6 MOSFET switches with low Rds(on) and a fast recovery body diode to yield low loss. All components and interconnects are isolated from the heat sink baseplate. This offers simplified system assembly and thermal management. Features: £ Low ESW(off) and Low Rds(on) £ Super-Fast Recovery Free- Wheel Diode £ Thermistor for TC Sensing £ Parallel Legs to make a Dual Module at 3X the Rating £ Positive Locking Connectors £ Easy Bus Bar Layout Due to Flow Through Power Design Applications: £ Forklift £ Off road Electric Vehicle £ Welder £ UPS £ Chopper Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. FM200TU-07A is a 75V (VDSS),

100 Ampere 6-Pack High Power

MOSFET Module. Type Current Rating VDSS Amperes Volts FM 100 75 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 4.33 110.0 B 3.54 90.0 C 1 .38 35.0 D 3.82 97 .0 E 3.15 80.0 F 3.27 83.0 G 0.26 6.5 H 0.48 12.0 J 0.51 12.9 K 0.65 16.5 L 0.63 16.0 M 1 .26 32.0 N 0.35 8.8 P 0.45 11 .5 Q 0.16 4.0 Dimensions Inches Millimeters R 0.79 20.0 S 1 .50 38.0 T 2.64 67 .0 U 1 .02 26.0 V 0.98 25.0 W 0.36 9.1 X Dia. 0.25 Dia. 6.5 Y Rad. 0.25 Rad. 6.5 Z 0.57 14.5 AA 0.55 14.0 AB 1 .18 30.0 AC 0.69 17 .5 AD 0.47 12.0 AE 0.61 15.5 AF 0.18 4.5 (8) GVP (2) SVP (11) GVN (5) SVN (9) GWP (3) SWP (12) GWN (6) SWN (7) GUP (1) SUP (10) GUN (4) SUN V W (13) (14) P N U

14 TH2

11 GVN

8 GVP

2 SVP

6 SWN

5 SVN

3 SWP

7 GUP

9 GWP

10 GUN

12 GWN

1 SUP

4 SUN

13 TH1

N P A D F M W AEAD AA AAZ Z Z AF LLK B E T Q Q C U V K M M X Y P S R G G J H N X (11 PLACES) TC MEASURED POINT A B A Housing Type Tyco Electronics P/N A: 917354-1 B: 177898-1 B C U V ABAB AC Z

6-Pack High Power MOSFET Module 2 07/12 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Ratings Symbol FM200TU-07A Units Channel Temperature Tj –40 to 150 °C Storage Temperature Tstg –40 to 125 °C Drain-Source Voltage (G-S Short) VDSS 75 Volts Gate-Source Voltage (D-E Short) VGSS ±20 Volts Drain Current (TC = 25°C) ID(rms) 100 Arms Peak Drain Current (Pulse) IDM 200* Amperes Avalanche Current (L = 10µH, Pulse) IDA 100* Amperes Source Current (TC = 25°C) IS(rms) 100 Arms Peak Source Current (Pulse) ISM 200* Amperes Maximum Power Dissipation (TC = 25°C, Tj < 150°C)* PD 410 Watts Maximum Peak Power Dissipation (TC' = 25°C, Tj < 150°C)* PD 560 Watts Mounting Torque, M6 Main Terminal — 40 in-lb Mounting Torque, M6 Mounting — 40 in-lb Weight — 600 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) VISO 2500 Volts * Pulse width and repetition rate should be such that device channel temperature (T j) does not exceed Tj(max) rating. Represents characteristics of the anti-parallel, source-to-drain free-wheel diode (FWDi). *TC' measured point is just under the chips. If you use this value, R th(f-a) should be measured just under the chips.

6-Pack High Power MOSFET Module 307/12 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Drain-Cutoff Current IDSS V DS = VDSS, VGS = 0V — — 1 .0 mA Gate-Source Threshold Voltage VGS(th) I D = 10mA, VDS = 10V 4.7 6.0 7 .3 Volts Gate Leakage Current IGSS V GS = VGSS, VDS = 0V — — 1 .5 µA Static Drain-Source On-State Resistance r DS(on) I D = 100A, VGS = 15V, Tj = 25°C — 1 .2 1 .65 mΩ (Chip) I D = 100A, VGS = 15V, Tj = 125°C — 1 .92 — mΩ Static Drain-Source On-State Voltage VDS(on) I D = 100A, VGS = 15V, Tj = 25°C — 0.12 0.165 Volts (Chip) I D = 100A, VGS = 15V, Tj = 125°C — 0.192 — Volts Lead Resistance Rlead I D = 100A, Terminal-Chip, Tj = 25°C — 1 .2 — mΩ ID = 100A, Terminal-Chip, Tj = 125°C — 1 .68 — mΩ Input Capacitance Ciss — — 50 nF Output Capacitance Coss V DS = 10V, VGS = 0V — — 7 nF Reverse Transfer Capacitance Crss — — 4 nF Total Gate Charge QG V DD = 48V, ID = 100A, VGS = 15V — 700 — nC Turn-on Delay Time td(on) — — 450 ns Rise Time tr V DD = 48V, ID = 100A, — — 400 ns Turn-off Delay Time td(off) V GS1 = VGS2 = 15V, RG = 13Ω, — — 600 ns Fall Time tf Inductive Load Switching Operation, — — 400 ns Diode Reverse Recovery Time trr I S = 100A — — 200 ns Diode Reverse Recovery Charge Qrr — 2.0 — µC Source-Drain Voltage VSD I S = 100A, VGS = 0V — — 1 .3 Volts **Represents characteristics of the anti-parallel, source-to-drain free-wheel diode (FWDi).

6-Pack High Power MOSFET Module 4 07/12 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Channel to Case Rth(j-c) MOSFET part (1/6 Module) — — 0.30 °C/W T C Reference Point per Outline Drawing Thermal Resistance, Channel to Case Rth(j-c') MOSFET part (1/6 Module) — — 0.22 °C/W Measured Point is Just Under the Chips. Contact Thermal Resistance Rth(c-f) Per 1/6 Module, Thermal Grease Applied — 0.1 — °C/W Thermistors Part Characteristics Symbol Test Conditions Min. Typ. Max. Units Resistance* R th T C = 25°C — 100 — kΩ B Constant* B Resistance at 25°C, 50°C — 4000 — K *B = (InR1 – InR2) / (1/T1 – 1/T2) R 1: Resistance at T1(K), R 2: Resistance at T2(K)

6-Pack High Power MOSFET Module 507/12 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com SOURCE-DRAIN VOLTAGE, VSD, VOLTS) SOURCE CURRENT, IS, (AMPERES) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL - INVERTER PART) 103 102 101 VGS = 0V Tj = 25°C Tj = 125oC GATE-SOURCE VOLTAGE, VGS, (VOLTS) DRAIN-SOURCE ON-STATE VOLTAGE, VDS(ON), (VOLTS) DRAIN-SOURCE ON-STATE VOLTAGE VS. GATE BIAS CHARACTERISTICS (TYPICAL ) 0 20 Tj = 25°C ID = 200A ID = 100A ID = 50A 15105 5 151397 11 DRAIN-SOURCE VOLTAGE, VDS, (VOLTS) DRAIN CURRENT, ID, (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V15 Tj = 25°C GATE-SOURCE, VGS, (VOLTS) DRAIN CURRENT, ID, (AMPERES) TRANSFER CHARACTERISTICS (TYPICAL) VDS = 10V Tj = 25°C Tj = 125oC 150 100 200 100 150 200 0.75 0.25 0.50 1 .00

6-Pack High Power MOSFET Module 6 07/12 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com DRAIN-SOURCE VOLTAGE, VDS, (VOLTS) CAPACITANCE, Cies, Coes, Crss, (nF) 10-1 100 101 102 CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) VGS = 0V Ciss trr Irr Coss Crss 102 101 100 SOURCE CURRENT, IS, (AMPERES) REVERSE RECOVERY CURRENT, trr, Irr, (ns) 101 102 103 REVERSE RECOVERY CHARACTERISTICS (TYPICAL) VDD = 48V VGS = ±15V RG = 13Ω Tj = 25°C INDUCTIVE LOAD 103 102 101 100 DRAIN CURRENT, ID, (AMPERES) SWITCHING LOSS, ESW(on), ESW(off), Err, (mJ/PULSE) 101 102 103 SWITCHING LOSS VS. DRAIN CURRENT (TYPICAL) 101 100 10-1 10-2 VDD = 48V VGS = ±15V RG = 13Ω Tj = 125°C INDUCTIVE LOAD GATE RESISTANCE, RG, (Ω) SWITCHING LOSS, ESW(on), ESW(off), Err, (mJ/PULSE) 0 20 40 60 80 100 120 140 SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) 102 101 100 10-1 10-2 VDD = 48V VGS = ±15V ID = 100A Tj = 125°C INDUCTIVE LOADESW(off) ESW(on) Err ESW(off) ESW(on) Err

6-Pack High Power MOSFET Module 707/12 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 101 102 103 101 DRAIN CURRENT, ID, (AMPERES) SWITCHING TIMES, (ns) SWITCHING TIME VS. DRAIN CURRENT (TYPICAL ) 102 103 VDD = 48V VGS = ±15V RG = 13Ω Tj = 125°C INDUCTIVE LOAD GATE CHARGE, QG, (nC) GATE-SOURCE VOLTAGE, VGS, (VOLTS) GATE CHARGE CHARACTERISTICS (TYPICAL ) 0 750 1000 ID = 100A 500250 CHANNEL TEMPERATURE, Tj, (°C) GATE-THRESHOLD VOLTAGE, VGS(th), (VOLTS) GATE THRESHOLD VOLTAGE VS. TEMPERATURE (TYPICAL ) 0 100 160120 140 VGS = 10V ID = 10mA 80604020 td(on) td(off) tr tf VDD = 24V VDD = 48V 101 GATE RESISTANCE, RG, (Ω) SWITCHING TIME, (ns) SWITCHING TIME VS. GATE RESISTANCE (TYPICAL ) 102 103 104 0 20 40 60 80 100 120 140 VDD = 48V VGS = ±15V ID = 100A Tj = 125°C INDUCTIVE LOAD td(on) td(off) tr tf

6-Pack High Power MOSFET Module 8 07/12 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 0 100 160120 14080604020 2.0 0.5 1. 5 1. 0 2.5 CHANNEL TEMPERATURE, Tj, (°C) DRAIN-SOURCE ON-STATE RESISTANCE, rDS(ON), (mΩ) DRAIN-SOURCE ON-STATE RESISTANCE VS. TEMPERATURE (TYPICAL ) TIME, (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (TYPICAL) 100 10-5 10-4 10-3 10-1 10-2 10-3 10-3 10-2 10-1 100 101 10-1 10-2 10-3 Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Single Pulse TC = 25°C ID = 100A VGS = 12V VGS = 15V