FL10KM-12

FL10KM-12A POWEREX | Alldatasheet

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Notice: This is not a final specification. Some parametric limits are subject to change. Sep.1998 FL10KM-12A OUTLINE DRAWING Dimensions in mm TO-220FN MITSUBISHI Nch POWER MOSFET FL10KM-12A HIGH-SPEED SWITCHING USE APPLICATION Switch mode power supply, Inverter fluorescent lamp, etc. 600 ±30 –55 ~ +150 –55 ~ +150 2000 2.0 V GS = 0V VDS = 0V L = 200µH AC for 1minute, Terminal to case Typical value Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight V V A A A W V g VDSS VGSS ID IDM IDA PD Tch Tstg Viso Symbol MAXIMUM RATINGS (Tc = 25°C) Parameter Conditions Ratings Unit l 10V DRIVE À À GATE \ DRAIN ´ SOURCE 15 ± 0.314 ± 0.5 10 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 2.6 ± 0.2 4.5 ± 0.2 0.75 ± 0.15 3 ± 0.33.6 ± 0.3 6.5 ± 0.3 À\´

Notice: This is not a final specification. Some parametric limits are subject to change. Sep.1998 MITSUBISHI Nch POWER MOSFET FL10KM-12A HIGH-SPEED SWITCHING USE PERFORMANCE CURVES V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs C iss C oss C rss td (on) tr td (off) tf VSD R th (ch-c) V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W 600 ±30 2.0 3.0 0.92 4.60 7.0 1150 135 220 1.5 ±10 4.0 1.10 5.50 2.0 3.13 ELECTRICAL CHARACTERISTICS (Tch = 25°C) Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Symbol UnitParameter Test conditions Limits Min. Typ. Max. I D = 1mA, VGS = 0V IGS = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 600V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz VDD = 200V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω IS = 5A, VGS = 0V Channel to case 10–1 100 101 3 10157 2 10235 7 2 10335 7 2 3 tw = 10µs 10ms 100µs 1ms DC TC = 25°C Single Pulse 0 1 02 03 04 05 0 VGS = 10V 4.5V PD = 40W TC = 25°C Pulse Test 0 4 8 12 16 20 PD = 40W TC = 25°C Pulse Test VGS = 10V 4.5V POWER DISSIPATION DERATING CURVE CASE TEMPERATURE T C (°C) POWER DISSIPATION P D (W) MAXIMUM SAFE OPERATING AREA DRAIN-SOURCE VOLTAGE V DS (V) DRAIN CURRENT ID (A) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE V DS (V) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE V DS (V) 0 200 50 100 150

Notice: This is not a final specification. Some parametric limits are subject to change. Sep.1998 MITSUBISHI Nch POWER MOSFET FL10KM-12A HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) GATE-SOURCE VOLTAGE V GS (V) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω ) TRANSFER CHARACTERISTICS (TYPICAL) GATE-SOURCE VOLTAGE V GS (V) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) SWITCHING CHARACTERISTICS (TYPICAL) DRAIN-SOURCE VOLTAGE V DS (V) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) DRAIN CURRENT ID (A) CAPACITANCE Ciss, Coss, Crss (pF) SWITCHING TIME (ns) 0 4 8 12 16 20 TC = 25°C Pulse Test 10A ID = 15A 0 10123 5 7 10223 5 7 TC = 25°C Pulse Test VGS = 10V 40 8 12 16 20 TC = 25°C VDS = 50V Pulse Test 10–1 10023 5 7 10123 5 7 10–1 100 101 VDS = 10V Pulse Test TC = 25°C 125°C 75°C 10023 5 7 10122 35 7 101 102 103 TC h = 25°C VDD = 200V VGS = 10V td(off) td(on) tf tr 102 103 104 100 2 10135 735 7 2 10235 7 2 3 101 Ciss Coss Crss TC h = 25°C f = 1MHZ VGS = 0V

Notice: This is not a final specification. Some parametric limits are subject to change. Sep.1998 MITSUBISHI Nch POWER MOSFET FL10KM-12A HIGH-SPEED SWITCHING USE 0 2 04 06 08 0 1 0 0 400V TC h = 25°C ID = 10A 200V VDS = 100V 0.4 0.6 0.8 1.0 1.2 1.4 –50 0 50 100 150 VGS = 0V ID = 1mA 1.0 2.0 3.0 4.0 5.0 –50 0 50 100 150 VDS = 10V ID = 1mA TC = 125°C 75°C 25°C VGS = 0V Pulse Test 10–1 100 101 –50 0 50 100 150 VGS = 10V ID = 5A Pulse Test 10–2 10–1 100 101 10–423 57 23 57 23 57 23 57 100 23 57 101 23 57 10210–3 10–2 10–1 D = 1.0 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse PDM tw D = T tw T GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) GATE CHARGE Q g (nC) GATE-SOURCE VOLTAGE V GS (V) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) SOURCE-DRAIN VOLTAGE V SD (V) SOURCE CURRENT I S (A) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE ON-STATE RESISTANCE r DS (ON) (t°C) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS CHANNEL TEMPERATURE Tch (°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) PULSE WIDTH tw (s) TRANSIENT THERMAL IMPEDANCE Z th (ch–c) (°C/W) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) DRAIN-SOURCE ON-STATE RESISTANCE r DS (ON) (25°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)