FH070NR DOINGTER | Alldatasheet
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Technical content
www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=100V,ID=30A,RDS(ON)≤ Ω@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-TC=25℃ 30 A Continuous Drain Current-TC=100℃ 21 Pulsed Drain Current --- EAS Single Pulse Avalanche Energy1 240 mJ PD Power Dissipation 75 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 2.8 ℃/W RƟJA Thermal Resistance,Junction to Ambient 65 D S G FH070NR D S G 70m A ll data sheet.com
www.doingter.cn — 2 — Package Marking and Ordering Information： Part NO. Marking Package TO-220F Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 100 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=100V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1 1.8 2 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=10A --- --- Ω GFS Forward Transconductance --- --- --- --- S Dynamic Characteristics Ciss Input Capacitance VDS=25V, VGS=0V, f=1MHz --- --- 1500 pF Coss Output Capacitance --- --- 160 Crss Reverse Transfer Capacitance --- --- 45 Switching Characteristics td(on) Turn-On Delay Time3,4 VDD=30V, ID=2A, RGEN=15Ω --- 11 --- ns tr Rise Time3,4 --- 7.4 --- ns td(off) Turn-Off Delay Time3,4 --- 35 --- ns tf Fall Time3,4 --- 9.1 --- ns Qg Total Gate Charge3,4 VGS=10V, VDS=30V, ID=3A --- 15.5 26 nC Qgs Gate-Source Charge 3,4 --- 3.2 --- nC Qgd Gate-Drain “Miller” Charge3,4 --- 4.7 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage VGS=0V,Id=30A --- --- 1.2 V FH070NR H070N FH070NR 70 m A ll data sheet.com
www.doingter.cn — 3 — Notes: 1, L=0.5mH, IAS=30A, VDD=50V, RG=25Ω, Starting TJ =25° C 2, Repetitive Rating : Pulse width limited by maximum junction temperature 3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 4, Essentially Independent of Operating Temperature. Typical Characteristics： (TC=25℃ unless otherwise noted) FH070NR A ll data sheet.com
www.doingter.cn — 4 — FH070NR A ll data sheet.com
www.doingter.cn — 5 — FH070NR A ll data sheet.com