FCX591 HTSEMI | Alldatasheet
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FEATURES
MARKING:P1 MAXIMUM RATINGS (T A =25 unless otherwise noted) Symbol Parameter Value Units V CBO Collector-Base Voltage -80 V V CEO Collector-Emitter Voltage -60 V V EBO Emitter-Base Voltage -5 V I C Collector Current –Continuous -1 A P C Collector Power Dissipation 0.5 W T J Junction Temperature 150 ℃ T stg Storage Temperature -65-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V (BR)CBO I C =-100μA , I E =0 -80 V Collector-emitter breakdown voltage V (BR)CEO * I C = -10mA , I B =0 -60 V Emitter-base breakdown voltage V (BR)EBO I E =-100μA, I C =0 -5 V Collector cut-off current I CBO V CB =-60 V , I E =0 -0.1 μA Emitter cut-off current I EBO V EB =-4 V , I C =0 -0.1 μA Collector- Emitter cut-off current I CES V CES =-60 V, I E =0 -0.1 μA DC current gain h FE V CE =-5V, I C = -1mA V CE =-5V, I C = -500mA V CE =-5V, I C = -1A V CE =-5V, I C = -2A 100 100 300 Collector-emitter saturation voltage V CE(sat) I C =-500 mA, I B = -50mA I C =-1A, I B = -100mA -0.3 -0.6 V Base-emitter saturation voltage V BE(sat) * I C =-1A, I B = -100mA -1.2 V Base-emitter voltage V BE * V CE =-5V, I C = -1A -1 V Transition frequency f T V CE = -10V, I C =- 50mA f =100MHz
150 MHz
Collector output capacitance C ob V CB =-10V, f=1MHz 10 pF *Pulse width=300s. Duty cycle 2% SOT-89 1. BASE 2. COLLECTOR 3. EMITTER FCX591 TRANSISTOR (PNP) Date:2011/05 www.htsemi.comsemiconductor JinYu
Date:2011/05 www.htsemi.comsemiconductor JinYu