FAP-450 FUJI | Alldatasheet

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FAP-IIS Series 500V 0,38Ω 14A 190W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - V GS = ± 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (T C =25°C), unless otherwise specified Item Symbol Rating Unit Drain-Source-Voltage V DS 500 V Continous Drain Current I D 14 A Pulsed Drain Current I D(puls) 56 A Gate-Source-Voltage V GS ±30 V Avalanche Current I AR 14 *2 A Maximum Avalanche Energy E AS 760 *1 mJ Max. Power Dissipation P D 190 W Operating and Storage Temperature Range T ch 150 °C T stg -55 ~ +150 °C *1) V CC = 50V; L = 7mH; I AS = 14A; R G = 50 Ω ; Starting T ch = 25°C (See Fig. 1 & 2) *2) Repetitive Rating : Pulse Width limited by max. Channel Temperature - Electrical Characteristics (T C =25°C), unless otherwise specified Item Symbol Test conditions Min. Typ. Max. Unit Drain-Source Breakdown-Voltage B V DSS ID =1mA V GS =0V 500 V Gate Threshhold Voltage V GS(th) ID =250µA V DS= V GS 3,0 3,0 4,0 V Zero Gate Voltage Drain Current I DSS V DS =500V T ch =25°C 25 µA V GS =0V T ch =125°C 1,0 mA Gate Source Leakage Current I GSS V GS =±30V V DS =0V 10 100 nA Drain Source On-State Resistance R DS(on) ID =8A V GS =10V 0,32 0,38 Ω Forward Transconductance g fs ID =8A V DS =25V 7 14 S Input Capacitance C iss V DS =25V 2200 pF Output Capacitance C oss V GS =0V 330 pF Reverse Transfer Capacitance C rss f=1MHz 140 pF Turn-On-Time t on ( ton =t d(on) +t r ) t d(on) V CC =250V 18 ns t r V GS =10V 70 ns Turn-Off-Time t off (t on =t d(off) +t f) t d(off) R G = 6,1W 130 ns t f R D = 20 Ω 70 ns Avalanche Capability I AV L = 100µH T ch =25°C 4 A Total Gate Charge C iss V CC =400V 170 nC Gate-Source Charge C oss V GS =10V 20 nC Gate-Drain Charge C rss ID = 14A 90 nC Diode Forward On-Voltage V SD IF =2xI DR V GS =0V T ch =25°C 1,0 1,5 V Reverse Recovery Time t rr IF =I DR V GS =0V 700 ns Reverse Recovery Charge Q rr -dI F /d t=100A/µs T ch =25°C 9,0 µC - Thermal Characteristics Item Symbol Test conditions Min. Typ. Max. Unit Thermal Resistance R th(ch-a) channel to ambient 35 °C/ W R th(ch-c) channel to case 0,65 °C/ W

500V 0,38Ω 14A 190W FAP-IIS Series > Characteristics Typical Output Characteristics Drain-Source-On-State Resistance vs. T ch Typical Transfer Characteristics ID =f(V DS ); 80µs pulse test; T C =25°C R DS(on) = f(T ch ); I D =8A; V GS =10V; 80µs pulse test ID =f(V GS ); 80µs pulse test;V DS =25V; T ch =25°C ID [A] 1 R DS(ON) [ Ω ] ID [A] 3 V DS [V] → T ch [°C] → V GS [V] → Typical Drain-Source-On-State-Resistance vs. I D Typical Forward Transconductance vs. I D Gate Threshold Voltage vs. T ch R DS(on) =f(I D ); 80µs pulse test; T C =25°C g fs =f(I D ); 80µs pulse test; V DS =25V; T ch =25°C V GS(th) =f(T ch ); I D =250µA; V DS =V GS R DS(ON) [ Ω ] g fs [S] 5 V GS(th) [V] 6 ID [A] → ID [A] → T ch [°C] → Max. Avalanche Energy Derating Typical Capacitances vs. V DS vs. Starting Channel Temperature Forward Characteristics of Reverse Diode C=f(V DS ); V GS =0V; f=1MHz E as =f(starting T ch ): Peak I L = 14A; V CC =50V IF =f(V SD ); 80µs pulse test; V GS =0V C [F] 7 Eas [mJ] IF [A] 9 V DS [V] → Starting T ch [°C] → V SD [V] → Allowable Power Dissipation vs. T C Safe Operation Area P D =f(Tc) ID =f(V DS ): Single Pulse, Tc=25°C Transient Thermal impedance Zth(ch-c=f(t); D=t/T ↑ 10 ↑ 12 ↑ Z thch =f(t) parameter:D=t/T P D [W] ID [A] Z th(ch-c) [K/W] T c [°C] → V DS [V] → t [s] → This specification is subject to change without notice!

500V 0,38Ω 14A 190W FAP-IIS Series > Characteristics Drain Current Derating Typical Gate Charge ID = f(T C ) V GS = f(Q g ); I D =14A ID [A] V DS [V] T C [°C] → Q g [nC] → Fig. 1: Test Circuit Fig. 2: Operating Waveforms This specification is subject to change without notice!