F8006N

F8006N FUJI | Alldatasheet

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SLECrRI | | — | sIzs pee —_,2 a SUBCTRIC SS BiLee Fuji New Semiconductor Products SA Ee oN channel, Dual 20V/5A Hit & Features + 1B DRE Low-on resistance + Vas=2.5V Shah Vas=2.5V driving PRIS Y ith BRE Avalanche capability rating A ¥ + INILAK SHURE Higher pulse-current ” fe. + G-SilY x +—4 4 4 — FARR Including G-S zener diode “4 ~ MCA Maximum ratings and characteristics “ss @ HRATH Absolute maximum ratings (Tc=25'C) . AFS7.31 tem Remarks Rut> + J-2@E|Vos [20 |v | Kit 8 a = RUA RUA RR PwiStms, Duly=0% FR = 2RE [Po | 2 |W _|Surface mounted on 1000mm'PCB(FR-4) ' BRAKE! po} 7 |W Sng ret Emeel ta | ied @ BMAiFte Electrical characteristics (To=25°C) ‘ | I Symbol Condit Ul =" [srmtct [oon ee mt | KU4 > + J— AMR [BVoss_fio=tmA, Vos=ov | | Td | F— PL Sie [Vas (th) [to=imA, Vos=Ves Tos | 0 | 15 |v | U4 Diem Vos=20V [Tm=asc 0 P10 [aa Vos=0V [Tatas [100500 [wa F—h- J ARRNRH [#icss_ | Vas=0.6V, Vos=ov || st‘ pA ; [ID=1.0A, Ves=2sv | 88 | 80‘ [ma 7+ ester) ioe A, Veseav_—_ |] os [8] ma IS ERP EEE [is fo 25a, Vos=tav ae | as | CS ASE Vos=12V a Hpee Vos=0v a ee Exes f=1MHz |_| 300] 450 [pF gos eM Voo=12V [015 Ins [tw | Vas=10v [| 20 | 30 ‘(ns _s td (off) ID=5A ns BLA ThE Ros=100 [| [150 | 220 [ns coos L=100uH, Ten=25C 4h KNEE Vso r=6A v : Vos=0V, Ten=25C —di/dt=50A/us @ HATE Thermal characteristics ‘oe oe Le LL... memam|aneres yew of +, **Surface mounted on 1000mm?PCB(FR-4) @ So] verge ] ba AA ' . 1 i} Toulee t i \\—— v. ee ar . — "" BH AVES 2 otras Test circuit Operating waveforms | 96No.22 |

F8006N B+/\\7 —MOSFET $$$ WE SSHEeHAR Characteristics PD=f (Ta) :mounted on 100mm? PCB (FRA Mater ia!) PERS raroeerrtey ~ FACE COC EEE reer wo GOTT

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EEEHECECEHEH SS REE 2. HUTT TT | @ i" " 10" Le HERE EEE ree Bice eresteer ec RESHUSMEEEESEUOUGUSNER\\SEESSSH epee FESUNOMPERUAUPAOUOED EGE AUA FOUL AAOEANOY : ee Fear rr oo HEEECEEEE EEE) woo CLOT TTTTTTTT a Y 00 0S 10 48 20 25 30 35 40 Teh [°C] vas [v} BK AmB Power dissipation Typical transfer characteristics | ID=f (VDS) :Single Pulse , Ta=25°C, All two FETs gfs=f (ID) :80ms pulse test, VDS=12V, Tch=25°C | w mounted on 1000mm? PCB (FR4 Material) aed Berit gr ean vo EO ee ee ral SS ee Cell a ee ti aah eet ee eee eee ee ace w Coe er tn nt | E> ot oe HI it >) SSS SSS | FL aa ea a Bs = im HINT Sts mai £ aati eaaattt eat pmaad ima ee SSeil eemca ieee et SSS ian eric ere es aay | ee eR ehh esta eames memes = Tn cht CMI i tic | ° SES y ero A FRE Sti Set Sa ae oe | vor LETT TTT TT eo COATT 10? 107 vos‘ 10° 10 10° 107 107 ID (A) 0 10° i REM ERIE REALTI ROR | Safe operating area Typical transconductance | ID=f (VDS) :80 7s pulse test, Tch=25°C RDS (on)=f (1D) :80ms pulse test, Tch=25°C | 2 oo . 020 apa See | CCR EE Eee FERRER EERE eee eee | SSUES SUT Ua eee bases eeesaeamey oa FSSES SSO Seed Rie trevetenacieest Efi firieceiaretsees | Senet re ey Ae A 018 FREER EERE EERE EERE EEESEESEeH COC ee ee GSES EEE EEE pogea Es aPaneusr caeseauencens| Seere ener stsnssessesaeaeseeees| HEHE AA oo FASS | 8 oe ey FREESE ESE REESE Sea fire seer 2aeeReeeECeeeeeey 02 FERRER GER RRS EER ESE

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7 /220S eee ee Seeseeeeenaassesscesasceso tees po te ea 0 ES eee nr oo PECHEEEE H 099 BEEEE ERR eee EEE ee} o0=«O2SCASStS o 2 4 6 6 0 w vos (v1 10 (A) ; He BU b+ Yo AA iH | Typical output characteristics Typical drain-source on-state resistance

| 7'7 —MOSFET ) ” 25°C. = ID=5A, Toh c ___ VGS=f (Og) am eae oa rT Fy =a ” erect Hatta Soresatearensczae DS (on) =F (Toh) AOAEREL OOO ANEDANAL . ee : i ae rs EASES Poo ro. ere yc tnasae TEAL i "E = 7 : oe ed 2 Fone ae ee paral re tit : San = icles ta : oe 0 seach i cS . Oa E AE LAE maa ee pe tH RSET Te cae = : a pe rearensritnastice! Soo HMSEEaeeear td entree aati ; ee : g eee Ee =a = : e Seta a Be : ae Peat ‘Potty 10 HH Co A = i ear Lt 00 5 i Lt FT oH ci +4 = aa HEE i : con ne Tete 4 : = Ee i pa ; , | . | gate iananraaeanaa ~ ° * ch Cel ° ° Toh - ; = test, Toh=25' 7 - | H i we TI KFute on-state resistance - -_ 7 pace nee Drain-sourc . ™ os | f HHH PT 7 Hd HEE Ho pe c fa co nin _ . HH foo H A . 30 Hea aia : = : = = FH miealtnetenian ie : = : oS au a7 Cy ro 8 a =, toy Re eeneeaer ana ror ' : - ae SanEER Va HHA Co 25 iteeerecntastiteate ices (uia 2 i i | a FEE HE Herat , fi = ; PuBRARARuaEH mH Ht Ft HH i i : not eeanganaael rH HHH aaa a a i 20 eet lb EREOAEAESEOLE fet io “ = = s HyAtanattaattan CHEE r| , = an FAH | = tH Ft ni HSiROIEEZEES if ie # i‘

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F8006N @+/\\'7—MOSFET See BART Outline drawings, mm WE ABBAAARED Equivalent circuit EIAJ SC873#81 Conform to EIAU SC87 O 867 6 5 8H 7E] 6H 5H = i) Do Lot No. o S H [| + s cy $s G acl i 1 2 34 dG rm | | oxtoss 0.16:0.05 ) 5.0+0.2 g fy Ct teicoo_} | td CHER | 1 COAFOIONEA (MRO. HE F- 9. MA MBE) L197H2AREOLOTH. | TONSNAOLREUO 2, EAIMOM IAD MMOFEGS RHENSLEMHD ET, COATOTCMMANTH | SMRERAENSBAIL, TONRORMMOMMBEALLT, 7-9 CHBUTS REV. 2 KAFOT RRL TH SOMME, BERANE OH LARA TOMAR TSLOTHO. AATOVIC LCL Hl, TOMMAORMINT SES LISMORE L TI EOTILSD RHA, 3. BLRMZGAT NORMAL AMHOMLIBO WET. LOL, FMAMRILD 5M CHIT 5 HENS DET, | BLAANEMAN BORMAN, BRE UTASMM, KRG KSMMINT SEO, MAMTHMELEC AMET ' ROLL BAT, AMOEBA ee RAMROADOFREMUTS RSV,

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MOL, THER TC ERM, CONF ASOMBECNSOMBIRAT SIC, SIICMARENA BLAME UR At RRL TE, MBORMLEDE IK. Ny IT YT VAFLEE, REMBOLOOMMLEMAMUES TE URBRCT | MRS (HR, AOE) + Ra + EMT SS i + A AMTRAK OE GLABRAE REAROLOO SR | 6. Mi TR MEMES ORES PRO LS CMBII, KATO TAMONMREBAL ET. FAL, | FERS + ZS + RF Af ES + MOE PES + BERR ' 7. BAFOIZO-BERBERORMMME OL TIL, HIE SHORE BETH,

8 COAFOSONGICHMORMSO ELAS, MERA SM RL MME, TOMEMML TOES,

KERB SE OWRIRDAOAOE ELD SHEE SL OME FOMIEEIAIEL LD BOTS OETA, ; Te SsseseesssssssSseseses EtRRatSH MMR GE Bama eat Ng- BRB tt (03) 5988-7657 NGRMAB om (06) 455-6467 beheld SRB— B (03) 5988-7681 ACRES MIR te (0764) 41-1231 (aI ZEN) RBLRR tf (0263) 36-6740 POISE tt (0878) 51-0185 | @ (03) 5388-7651 GURRRRR—83 =m (03) 5388-7681 peBsat | GUA em (03) 5388-7652 AMSMMES — BY (052) 204-0295 | ANA | MAMMA te (092) 731-7132 1997-3 (C97) [30 FIS |