F7007N FUJI | Alldatasheet
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i : Fusl re or _ ° ss SUECTIRIC Bt eA a7 =+Ee Fuji New Semiconductor Products Avy vee ce fase) N channel, Single 30V/7A eS ee Mis & Features + A > aE Low-on resistance > Vas=4V Shey Vas=4V driving + PND Y rit B Ra Avalanche capability rating ” + WV AKSHRRE Higher pulse-current " + GSiY r+—44 4A— KAR Including G-S zener diode . ® Mew ce Maximum ratings and characteristics . @MWHRALH Absolute maximum ratings (Tc=25'C) AFO7-3T tem Remarks KUd> + Y=2M@E|Vos | 30 |v Rut Bit io ft? AT TIGR BUA > Pw500 ws, Duty=0% Fabs J-2OE i BARBARA [Po [| 2 ~~ [W_[Surface mounted on 1000mm'PCB(FR-4) ’ FRB [Te [aso Ye | rtd - @ MMH Electrical characteristics (Te=25°C) tt symbol Condit EU4 > + J—ABRRE [BVoss_io=ima, Ves=ov 30 PV Fob LS ie [Vas (th) [io=tmA, Vos=ves Toto | ts | 20 |v oat vaeN RS [weeny Pees} {2 Foo | A fet ae fess esmav [Tastes [| 160 | $00 [ua Fah J- ARNE [ticss_ | Vos=t14.5V, Vos=ov ttn +o Ros (on) [Ves=av T2585 [ma [Ves=1ov | ia 25 [mo Miia 899% [gis [= 8.5A, Vos=2ev so TS AASE Vos=25V [| f1050 [1570 [pF EES 3 Ves=0V | 550 [830 [pF ‘ ASE t=1MHz | 270 410 [oF Lt: Voo=15V [| to 18 Ins _ Bi anal Vos=10V [20 {30 Ins aL + TIERS lo=7A |__|. 350 | 520 [ns Res=100 [| | 250 | 370 Ins | Bue L=100uH, Ten=25°C | {Sy5 ay 1F=7A —di/dt=100A/us @ MME Thermal characteristics i ~e hom Unit _ [Max. | | cs. = “ve RAMEN ]|Rth(ea)*[625 [Cw . Sve ‘*Surlace mounted on 1000mm*PCB(FR-4) © 0 Voom 9/0 & Yaa i em" | ; Toa | ° = iH ah wees le mate Test circuit Operating waveforms 96 No. 21
F7007N BX/\\7 —MOSFET enema ei tein Misti Characteristics CTT Cry jan (SUURSREE SHGGEKERESCRERGRGRORGReReS| SUESUUEROUUBRREEERTREEEE REG FOHA SSESAERNSOAAORETAGAIUSEESOROREONEIG ifbeesstestesustefesssiniions SPS UCCOUADIATUAUOGAEUINVVUO><aAHN1N00011 at POC ToT] Fe Se Pet
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Setaiesariiensn eset vot art MT ae i Sd AL ATM A ESS ai ee ll wos CCUG TTA TTT 107 107 os ‘tH 0 10? 10? 107 107 1D wy 10" RSM WEALADRAUA Sate operating area Typical transconductance ID=f(VDS) :80 41s pulse test, Th=25°C 1g <RS¢on)=F(1D) :80ms pulse test, Teh=26°C qo COT ee 0 TTT my a Fat aap ay ot TL et LATEUUTPOV TEA POPOV REPO LALA PARE EET RTT ICT Fo Ree anane Seo TVA UTRGSO eT AAA coos [ITTNes MOG UUAANDEPOUUNLADOEG FENARIU NOOSA OUEOU BRETT eh Aa PE eee ae Ae a aaaear F AL Hits oi 4 Pee ee Lg ara ET TO ss Ce AA TTT AAPL HSER au ao ovtt ELT GOELLIE ' SREY /A0/)/ 0 Rae S ooe ONO Th | ti WMO ooo & TEL | HA Hy HLL A ELENA BERL I Leer HEE s UTE POA AAOOE NORDEA Tet VOPLLATOUUULSEENO EGA = ro COO P4 Hea ty EEE HHA EY Bo ETT Te TTT UY = HEPA Iie ee LTT ER COA vase FETT a eer a OMIM sO er ee eeaneneregeeae cence eg HU WA YOGA HANA PN UNA HNAAD NOKEG NEUE PPD OPTRA | F /4R OSES GRR » CHEE EE 00 HARE ee 0.0 02 4 06 08 10 4.2 0 2 4 6 8 1 12 14 16 18 20 22 24 : wos (¥] 10 (A) HA SNE EL4 y+ Y-R24 RL Typical output characteristics Typical drain-source on-state resistance
B+/\\'7 —MOSFET F7007N | 0 ROS (on) =f (Tch) : 1D=3. SA —— os VGS=f (Qg) : ID=7A, Teh=25°C 10 HEECEHatad eeeapoewataa teeeceeatTti BEER EERE EEEEEH eo PERCE BRCo rer —herTTT—TEE ee phe a ee | esa esdeasitaattasttcai aitoatestisend BREE REE EEE EEE EEE RPSH Era eaeetcateosteautfauttasseatiessa @ BECP 3 pa et EERE EE Fecezsted feeccosed tag eeeedtaaifesteozses HERE E REE EES AREEre al eerie tieearatnee eee St eeeeS cee cee Popeater sceatey oer Fad grecbeeees Heracest ua as CAR 40 i COATT rey ity a e° (ER ay SRS Se] & APecerece Ae é auset/eneucone7 zed baeceTeebesbs -avaeves 2 ctl EEE 2 Boe HEEL Eee & Core Ss Rg NNHnre Conan UREANeREgne>éc PSS RNRENRUBRE=>| ‘ona (ae | tirrrrl, Pall chau ueudanequesear’:anseccCAnanpesss sama 10 H+ PCE eee RE rtye, Hee Hse AH rt rt 8 eee jggunnezz yeas KuwEa EAE Ae ' Soares ceaieesnesse toss iioMacteteasteat Fae Est Beseseeceiceegs natn ttessaeat feast sae PER ee Ease ee oe Eo Feeesreeestette pve HEHE HEE > HERS ree 9 EEE ERNCECEEEEEEEEF EH , 020s 75 100 125150 Q rr 2 2 ra Teh [°C] Qg {nc} BUTS + Yo at H Poh RTE Drain-source on-state resistance Typical gate charge characteristics 30 VGS (th) =f (Toh) :VDS=VGS, ID=1mA s -ID=f (VSD) :80us pulse test, Tch=25°C. | fsegeuteasasusrenhsstenitenranteecsrans CoCo Hide tateeeeroe a taeen Peeeee FEE EE ) Hesuddessatseonaatt tovtaitaattteoai tetas SSRs SSS SER SR SERRE | as See ty HEA ha pee Ht HFT EaREEATLAAREEGAREE HEE 2 ECHR ee eee] RatectaeeHtaneRERHER HH HEH HHH CTT TTY FA HER HH-| Peg sHenesnastsfcaesQassarenqaneinaQsitatenis EEE Rad UAGEAGSEAUGASTRCRSTSRERSESREGGSTTOEE HEE AEE = ades ea HGRAGHESAAERSTATREZSCOHEGAA HH 3° ooo BEER | Svs FARE = Fee Pie eteerescrees es eteeae UTE 2 (/7aeuunpesesssues anee PM tsa stre fat staat estanpetceneefonts Ty CEE EMU LLaGALscceAUGKBURGGEENSERERBTONCS*TGEERNO| oe At Ae HH EH
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ARGREOGERHEBEESERE LG Rsteateeeent ead Sie (SUS SESSSRSSERE see ' cat PoE af es. See eaeaaal bm ae eeeeel -EEEEHAR 44 Eee GEHUEENEREURLZOGRELSaH| s CA eee ; os FECHA HOE EEE EH SEGHGHGHOESHRREHSSHOH SESH SHEESESNBERAEES PAA EE SHERROGREGEEGIIOUUGLGRt STEGEREEGd o/ SERS RS SeeeS Reeser eee | I ETunt aEGEOEGRHGEGOHGVEG#O REKHGHGRERtORE BES oo CECE EHH 9 COCO ee ' 50-25 o 2 50 7S 100 125 150 00 oz o4 06 08 10 | Teh [°C) vsb [V) Fb Lene WIN 2ST EMRE Gate threshold voltage Typical forward characteristics of reverse diode gt I C=f (VDS) : VGS=OV, f=1MHz 0 ra SS a ema ) eeeeiat ae ated ees mati mounted on 100mm? PCB (FR4 material) ase oa it eas er 10? pepe aE eI ee LOIS oo eerie rth ES aS SS stat 0 Oe is re Se ° es rit os os aN | eee ene ity SOM tS Sea i ee se acl ee tail eal SSeS ect emereemee Eo CU eA eat Ta to vee CO > SHE isa 107 10" 10° 10! 10 10? 10% = tot 10% 07 10° 10" 10? vos (V) t [soc} ADMD ERSE WHR -E-FLZ Typical capacitance Transient thermal impedance |
F7007N BL/\\'7—MOSFET bet Seek Outline drawings, mm ME PASBREAREY Equivalent circuit EIAJ SC87HEHA Conform to EIAJ SC87 D Lot No. g q 3 s Q (J K 123 HB eH +H mi , | 0.40.05 0.150.05 $.040.2 3 a toto | lol 1.27 e | CHE 1. COAFOTONE (MRO, RE F—F. A, WL) 1997 2A REO BOTH, COMBRMAOLMREO hi, SKILOMAIS LD MMOFHE< RHAHSTENHO EY. COMPO MENT BWREMAENSBSI i, CONBORGMROUMMBE ALT, F-F EMIBLTC EE Wy 2 RAF OAR Th SIHAIL, BLAND EL AARNE RMS 5 BOTH D . KAO Lo CLR HE, LORMAN 5 RIES AEREMOMRE TS LOTS) ETA, 3, SLRMINGA THRO BR CAMEOS LIB TOES. LL. EMAMR IES SHON CHET 5 OTRAS DET, BERANE MAME ORM, MRL UTAS MM, AGI EOMRIONT HMO, HAMAR ERI mks (Rea, ERPULMAT, RITE DRLR ET & ERSMROKMOFHEMUTS ERY, '
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