F2223-21SH HAMAMATSU | Alldatasheet
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Technical content
FEATURES
GCenter Hole for Beam Line GCompact and Lightweight
APPLICATIONS
GScanning Electron Microscopy GScanning Ion Microscopy GElectron Lithography GMask Aligner GElectron Beam Measuring System GIon Scattering Spectroscopy Parameter Value Unit Assembly Outer Size Effective Area Height (Max.) MCP Channel Diameter Number of MCPs MCP Center Dead Area mm mm mm µm mm 56.5 27.0 8.6 RATINGS MCP Supply Voltage (Max.) MCP-Out to Anode Supply Voltage (Max.) Mesh to MCP-In Supply Voltage Anode to Substrate Supply Voltage Operating Vacuum Condition (Max.) Ambient Temperature Baking Temperature Baking Time Vacuum Condition for Baking (Max.) kV kV kV kV Pa Hours Pa 0.5 0.5 1.3 × 10 +10 to +40 300 1.3 × 10-4 TYPICAL ELECTRICAL CHARACTERISTICS (Supply Voltage: 2 kV, Vacuum: 1.3 × 10-4 Pa, Operating Ambient Temperature: +25 °C) Gain at 1.8 kV (Min.) Plate Resistance Maximum Linear Output Dark Current MΩ / MCP pA·cm 1 × 106 20 to 40 7 % of strip current under uniform input into whole MCP effective area MCP ASSEMBLY F2223-21SH This MCP assembly is a suitable detector for an electron or ion beam in SEM, SIM or Lithography. It is possible to detect some signal from a sample with high sensitivi- ty, that can be performed with the compactness and the center hole of this assembly. It allows to set this assembly at close position to the sample and gives better efficiency in the beam detection. TMCPF0020 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
OCT. 2006 IP GAIN CHARACTERISTIC CONSTRUCTION AND APPLICATION EXAMPLE WIRING POTENTIAL EXAMPLE MESH MCP-IN MCP-OUT ANODE CENTER PIPE AND SUBSTRATE SAMPLE * This is an example potential to detect secondary electrons. For other applications, please consult to our sales office. DIMENSIONAL OUTLINES (Unit: mm) TMCPC0001EA TMCPA0002EE HAMAMATSU PHOTONICS K.K., Electron Tube Division 314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Smidesvä gen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu.it WEB SITE www.hamamatsu.com SUPPLY VOLTAGE (kV) GAIN 108 107 106 105 104 103 1 1.5 2 TMCPB0003EA SAMPLE SECONDARY ELECTRON ( REFLECTING ELECTRON ) MESH MCP (2-STAGE) ANODE 56.5 8.6 MESH LEAD MCP-IN LEAD (SUS-NM) MCP-OUT LEAD (SUS-NM) ANODE LEAD EFFECTIVE AREA
8 MCP (2-STAGE)
(INNER DIA. 4) SUBSTRATE (SUS304) SINGLE ANODE DEAD SPACE 4- 2.6 PCD* 50.8 * PCD (Pitch Circle Diameter)