ET405 FUJI | Alldatasheet
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Technical content
Features
High voltage,High speed switching High reliability
Applications
General purpose power amplifiers Thermal characteristics Item Symbol Test Conditions Min. Typ. Max. Units Rth(j-c) Junction to case 1.55 °C/W V V V V A A W Item Symbol Ratings Unit Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless otherwise specified) -55 to +150 Electrical characteristics (Tc =25°C unless otherwise specified) Min. Typ. Max. Units V V V V mA mA V V µs µs µs Symbol V CBO VCEO VCEO(SUS) VEBO ICBO IEBO hFE VCE(Sat) VBE(Sat) ton tstg tf Test Conditions I CBO = 1mA ICEO = 10mA ICEO = 1A IEBO = 0.1mA VCBO = 450V VEBO = 7V IC = 4A, VCE = 5V IC = 4A, IB = 800mA IC = 7.5A, IB1 = 1.5A IB2 = -1.5A, RL = 20 ohm Pw = 20µs Duty=<2% 450 400 400 1.0 0.1 1.2 1.5 1.0 2.0 1.0 Outline Drawings TO-3PF JEDEC (TO-3PF) EIAJ - Collector-Base voltage V CBO Collector-Emitter voltage V CEO Collector-Emitter voltage V CEO(SUS) Emitter-Base voltage V EBO Collector current I C Base current I B Collector power disspation P C Operating junction temperature T j Storage temperature T stg 450 400 400 +150 Item Collector-Base voltage Collector-Emitter voltage Collector-Emitter voltage Emitter-Base voltage Collector-Base leakage current Emitter-Base leakage current D.C. current gain Collector-Emitter saturation voltage Base-Emitter saturation voltage Switching time Thermal resistance
ET405 FUJI POWER TRANSISTOR Collector-Emitter voltage VCE[V] Collector Output Characteristics Collector current I C[A] DC Current Gain Collector current I C[A] D.C. current gain hFE Base and Collector Saturation Voltage Collector current I C[A] Saturation voltage V CE(sat), VBE(sat)[V] Safe Operating Area Collector-Emitter voltage VCE[V] Collector current I C[A] Switching Time Collector current I C[A] Switching time ton, tstg, tf [µs] *1 Switching Time Test Circuit