ESJA19 FUJI | Alldatasheet
Document overview
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Technical content
Features
Ultra high speed switching Low VF High surge resisitivity for CRT discharge High reliability design Ultra small pakage
Applications
Rectification for CRT display monitor high voltage power supply (FBT: Flyback Transformer) Maximum Ratings and Characteristics Absolute Maximum Ratings Items Repetitive Peak Reverse Voltage Average Output Current Surge Current Junction Temperature Allowable Operation Case Temperature Symbols V RRM IO IFSM Tj Tc Condition 10mS Sine-half wave peak value Ta=25°C,Resistive Load ESJA19 -10 -12 10 12 0.5 120 100 -40 to +120 Units kV mA A Electrical Characteristics (Ta=25°C Unless otherwise specified ) Items Maximum Forward Voltage Drop Maximum Reverse Current Symbols V F IR Conditions IF=10mA VR =VRRM ESJA19 -10 -12 36 42 Units V µA Maximum Reverse Recovery Time trr Ta=25°C,IF=2mA,IR =4mA 0.045 µs Junction Capacitance Cj Ta=25°C,VR =0V,f=1MHz 1 pF Storage Temperature Tstg ESJA19 is high reliability resin molded type high voltage diode in small size package which is sealed (a multilayed mesa type silicon chip) by epoxy resin. ESJA19-10 ESJA19-12 Cathode Mark Type Mark 27 min. 27 min.10 o 2.5 o 0.5 Cathode MarkLot No.
Tj= 25°C Tj=100°C ESJA19-10 ESJA19-12 Forward Characteristics V F [V] I F [mA] 0 4 8 12 16 1E-3 0.01 0.1 ESJA19-10 ESJA19-10 ESJA19-12 Tj=100°C Tj= 25°C ESJA19-12 Reverse Characteristics I R [µA] V R [kV] 0 40 80 120 160 200 0.0 0.2 0.4 0.6 0.8 1.0 ESJA19-12 ESJA19-10 Junction Capacitance Characteristics Tj=25°C f=1MHz Cj [pF] V Bias [V] 8 1 21 62 02 42 8 100 ESJA19-12 ESJA19-10 Tj= 25°C IR =100 µ A N=100pcs. Avalanche Breakdown Voltage V AV [kV] N [pcs.]
100 Tj= 25°C
N=100pcs. 100 ESJA19-12 ESJA19-10 Reverse Recovery Time trr (µ s) N [pcs.] 0.01µF 1kohm 100ohm 150 kohm D.U.T OSCILLO SCOPE IF=2mA IR =4mA 1mA trr ESJA19 (10kV,12kv/5mA) Characteristics