ESJA09 FUJI | Alldatasheet
Document overview
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Technical content
Features
Ultra high speed switching Low VF High surge resisitivity for CRT discharge High reliability design Ultra small pakage
Applications
Rectification for CRT display monitor high voltage power supply (FBT:Flyback T ransformer) Maximum Ratings and Characteristics Absolute Maximum Ratings Items Repetitive Peak Reverse Voltage Average Output Current Surge Current Junction T emperature Allowable Operation Case T emperature Symbols V RRM IO IFSM Tj Tc Condition 10mS Sine-half wave peak value T a=25°C,Resistive Load ESJA09 -10 -12 10 12 0.5 120 100 -40 to +120 Units kV mA A Electrical Characteristics (T a=25°C Unless otherwise specified ) Items Maximum Forward Voltage Drop Maximum Reverse Current Symbols V F IR Conditions IF=10mA VR =VRRM ESJA09 -10 -12 Units V µA Maximum Reverse Recovery Time trr T a=25°C,IF=2mA,IR =4mA 0.05 µs Junction Capacitance Cj T a=25°C,VR =0V ,f=1MHz 1 pF Storage Temperature Tstg ESJA09 is high reliability resin molded type high voltage diode in small size package which is sealed (a multilayed mesa type silicon chip) by epoxy resin. Outline Drawings ESJA09-10 ESJA09-12 Cathode Mark T ype Mark 27 min. 27 min.10 o 2.5 o 0.5 Cathode MarkLot No.
ESJA09 (10kV ,12kV/5mA) Characteristics 0 2 04 06 08 0 ESJA09-12 Tj= 25 o C Tj=100 o C ESJA09-10 Forward Characteristics V F [V] IF [mA] 048 1 2 1 6 1E-3 0.01 0.1 ESJA09-10 ESJA09-10 ESJA09-12 Tj=100 o C Tj= 25 o C ESJA09-12 Reverse Characteristics IR [µ A] V R [kV] 0 40 80 120 160 200 0.0 0.2 0.4 0.6 0.8 1.0 ESJA09-12 ESJA09-10 Junction Capacitance Characteristics Tj=25 o C f=1MHz Cj [pF] V Bias [V] 81 21 62 02 42 8 100 ESJA09-12 ESJA09-10 Tj= 25 o C IR =100 µ A N=100pcs. Avalanche Breakdown Voltage V AV [kV] N [pcs.]
100 Tj= 25
o C N=100pcs. 100 ESJA09-12 ESJA09-10 Reverse Recovery Time trr (µ s) N [pcs.] 0.01µF 1kohm 100ohm 150 kohm D.U.T OSCILLO SCOPE IF=2mA IR =4mA 1mA trr