ESJA09-12 FUJI | Alldatasheet
Document overview
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Technical content
Features
High surge resisitivity for CRT discharge High reliability design Ultra small pakage
Applications
Rectification for CRT display monitor high voltage power supply (FBT:Flyback Transformer) Maximum Ratings and Characteristics Absolute Maximum Ratings Items Repetitive Peak Renerse Voltage Average Output Current Suege Current Junction Temperature Allowable Operation Case Temperature Symbols V RRM IO IFSM Tj Tc Condition 10mS Sine-half wave peak value Ta=25°C,Resistive Load ESJA09-12 0.5 120 100 -40 to +120 Units kV mA A peak Electrical Characteristics (Ta=25°C Unless otherwise specified ) Items Maximum Forward Voltage Drop Maximum Reverse Current Symbols V F IR1 IR2 Conditions at 25°C,IF=10mA at 25°C,VR=12kV at 100°C,VR=12kV ESJA09-12 Units V µA µA Maximum Reverse Recovery Time trr at 25°C,IF=2mA,IR=4mA 0.05 µs Junction Capacitance Cj at 25°C,VR=0V,f=1MHz 1 pF Storage Temperature Tstg ESJA09 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Outline Drawings : mm ESJA09-12 Cathode Mark Type Mark White 27 min. 27 min.10 o 2.5 o 0.5 Cathode MarkLot No.
This product is scheduled be obsolete on march 2007. Not recommend for new design. ESJA09-12 (12kV/5mA) Characteristics 4 6 8 10 12 0.01 0.1 Reverse characteristic (VR-IR) Typical Toil=100°C IR (µA) VR (kV) 100 15 16 17 18 19 20 21 22 23 24 25 Avalanche characteristic (Vz-Iz) Iz (µA) Ta=25°C Typical Vz (kV) 50 60 70 80 90 100 110 120 130 100 110 120 130 IF/IR=2/4mA 75% Recovery Reverse recovery time characteristic (Ta-trr) trr (ns) Typical Ta (°C) 20 25 30 35 40 45 50 55 60 Forward characteristic (VF-IF) Ta=25°C Typical VF (V) IF (mA)