ESJA08-08 FUJI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features
High surge resisitivity for CRT discharge High reliability design Ultra small pakage
Applications
Rectification for CRT display monitor high voltage power supply (FBT:Flyback Transformer) Maximum Ratings and Characteristics Absolute Maximum Ratings Items Repetitive Peak Renerse Voltage Average Output Current Suege Current Junction Temperature Allowable Operation Case Temperature Symbols V RRM IO IFSM Tj Tc Condition 10mS Sine-half wave peak value Ta=25°C,Resistive Load ESJA08-08 0.5 120 100 -40 to +120 Units kV mA A peak Electrical Characteristics (Ta=25°C Unless otherwise specified ) Items Maximum Forward Voltage Drop Maximum Reverse Current Symbols V F IR1 IR2 Conditions at 25°C,IF=10mA at 25°C,VR=8kV at 100°C,VR=8kV ESJA08-08 Units V µA µA Maximum Reverse Recovery Time trr at 25°C,IF=2mA,IR=4mA 0.05 µs Junction Capacitance Cj at 25°C,VR=0V,f=1MHz 2 pF Storage Temperature Tstg ESJA08 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Outline Drawings : mm ESJA08-08 Cathode Mark Type Mark 27 min. 27 min.6.5 o 2.5 o 0.5 Cathode MarkLot No. White
This product is scheduled be obsolete on march 2007. Not recommend for new design. ESJA08-08 (8kV/5mA) Characteristics 10 15 20 25 30 35 40 45 Forward characteristic (VF-IF) Ta=25°C Typical VF (V) IF (mA) 2345678 0.01 0.1 Reverse characteristic (VR-IR) Typical Toil=100°C IR (µA) VR (kV) 100 8 9 10 11 12 13 14 15 16 Avalanche characteristic (Vz-Iz) Ta=25°C Typical Vz [kV] Iz [µA] 50 60 70 80 90 100 110 120 130 100 110 120 130 IF/IR=2/4mA 75%Recovery Reverse recovery time characteristic (Ta-trr) trr (ns) Typical Ta (°C)