ESJ4N65 WXDH | Alldatasheet

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Technical content

ROUM Semiconductor Technology CO.,LTD. Rev. 1.0 www.roum.cn Page 1 of 11 ESJ4N65

1 Description

The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. Which accords with the RoHS standard.

2 Features

  • New technology for high voltage device
  • Low on-resistance and low conduction losses
  • Small package
  • Ultra Low Gate Charge cause lower driving requirements
  • 100% Single Pulse Avalanche Energy Test
  • 100% ΔVDS Test

3 Applications

  • Power factor correction（PFC）
  • Switched mode power supplies(SMPS)
  • Uninterruptible Power Supply（UPS） 4A 650V N-channel Super Junction Power MOSFET Ⅱ

4 Electrical Characteristics

4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted)

PARAMETER SYMBOL V ALUE UNIT Maximum Drian-Source DC V oltage VDS 650 V Maximum Gate-Drain V oltage VGS ± 30 V Drain Current(continuous) ID（T=25℃） （T=100℃） 4 A 2.5 A Drain Current(Pulsed)(Note 3) IDM(Pluse) 12 A Single Pulse Avalanche Energy(Note 1) EAS 130 mJ Peak Diode Recovery dv/dt(Note 2) dv/dt 50 V/ns Total Dissipation Ta=25℃ Ptot 2.02 W TC=25℃ Ptot 46 W Junction Temperature Tj 150 ℃ storage Temperature Tstg -55～150 ℃ Repetitive Avalanche energy EAR 0.2 mJ Avalanche current IAR 2 A * limited by maximum junction temperature

4.2 Thermal Characteristics

PARAMETER SYMBOL V ALUE UNIT Thermal Resistance Junction to Case-sink RthJC 2.72 ℃/W Thermal Resistance Junction to Ambient RthJA 62 ℃/W VDSS = 650V RDS(on) （TYP)= 1.0Ω ID = 4A TO-263 1 2 3 4 5 6 7 8 A B C D 87654321 D C B A Title N u mb er R ev isio nSize D D ate: 1 0 -A p r-2 0 1 7 Sh eet o f File: D :\\ Pr og ram Files\\p ro tel 99 se\\ 文件夹\\W X D HD raw n B y : G S D

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4.3 Electrical Characteristics(Tc=25℃,unless otherwise noted)

PARAMETER SYMBOL Test Condition V ALUE UNIT MIN TYP MAX Off Characteristics Drain-source Breakdown V oltage BVDSS ID=250μA,VGS=0V 650 -- -- V Drain-to-Source Leakage Current IDSS VDS=650V ,VGS=0V ,TC=25℃ -- -- 1 μA VDS=650V ,VGS=0V ,TC=125℃ -- -- 50 μA Gate-to-Source Forward Leakage IGSSF VGS=+30V -- -- 100 nA Gate-to-Source Reverse Leakage IGSSR VGS=-30V -- -- -100 nA On Characteristics(Note 5) Gate threshold voltage VGS(th) VDS=VGS,ID=250μA 2.5 3 3.5 V Drain-source on Resistance RDS(on) VGS=10V ,ID=2.5A -- 1 1.2 Ω Dynamic Characteristics(Note 6) Forward Transfer conductance gfs VDS=20V ,ID=2.5A -- 4 -- S Input Capacitance Ciss VGS=0V ,VDS=50V ,f=1.0MHz -- 280 -- pF Output Capacitance Coss -- 26 -- Reverse Transfer Capacitance Crss -- 2.3 -- Switching Characteristics(note6) Turn-on Del ay Time td(on) ID=2.5A, VDD=380V, RG=20Ω VGS=10V -- 6 -- nS Turn-on Rise Time tr -- 3 -- nS Turn-off Delay Time td(off) -- 48 60 nS Turn-off Fall Time tf -- 8 15 nS Total Gate Charge Qg ID=4A,VDD=480V ,VGS=10V -- 6.5 -- nC Gate-to-Source Charge Qgs -- 1.3 -- Gate-to-Drain(“Miller”)Ch arge Qgd -- 2.5 -- Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VFSD VGS=0V ,IS=4A -- 1 1.3 V Diode Forward Current (Note 2) IS -- -- 4 A Reverse Recovery Time trr TJ=25℃,IS=4A, dIi/dt=100A/μS,VGS=0V -- 150 -- nS Reverse Recove ry Charge Qrr -- 0.85 -- uC Maximum Pulsed Current(Body Diode) ISM -- 11 -- A Notes： 1. VDD=50V ,VG=10V , R G =25Ω, Start TJ=25℃. 2. ISD=4A,di/dt≤100A/μs,VDD≤BVDSS, Start TJ=25℃. 3: Repetitive rating, pulse width limited by maximum junction temperature. 4: Surface mounted on FR4 Board, t≤10sec. 5: Pulse width ≤ 300μs, duty cycle ≤ 2%. 6: Guaranteed by design, not subject to production.

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5 Typical cha racteristics diagrams

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5 Typical characteristics diagrams(continues)

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6 Typical Test Circuit and Waveform

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 A B C D 16151413121110987654321 D C B A Title N u mb er R ev isio nSize E D ate: 3 1 -May -2 0 1 7 Sh eet o f File: C :\\ U sers\\A dm in istrat or \\D esk to p \\ 模板\\w x d hq x t ( 1) . d dbD raw n B y : Same Type 50KΩ DUT VDS 200nF V 12V 200nF is DUT GS VGS 10V Q gs Q gd Q g VDS RL V DDDUT VGS RG 10V VDS 90% 10% VGS td(on) tr td(off) tf VDS I D DUT V DD L 10V RG BV SS I AS V DD I D(t) V DS(t) tp 1) Gate Charge T est Circuit & Waveform 2)Resistive Switching T est Circuit & Waveforms 3) Unclamped Inductive Test Circuit & Waveforms -3mA

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7 Product Names Rules

8 Product Specifications and Packaging Models

Product Model Package Type Mark Name RoHS Package Quantity SJ4N65 TO-220C SJ4N65 Pb-free Tube 1000/box FSJ4N65 TO-220F FSJ4N65 Pb-free Tube 1000/box BSJ4N65 TO-251 BSJ4N65 Pb-free Tube 1000/box DSJ4N65 TO-252 DSJ4N65 Pb-free Tape ＆ Reel 3000/box ISJ4N65 TO-262 ISJ4N65 Pb-free Tube 1000/box ESJ4N65 TO-263 ESJ4N65 Pb-free Tape ＆ Reel 800/box Rated V oltage Code With 2 Digital,For Example: 60 on behalf of 600V , 06 on behalf of 60v Special Function Code E on behalf of build-in ESD Nothing on behalf of not ESD Packaging Code 220F: F 220: Nothing 251: B 252: D 262: I 263: E Rated Current Code With 1-2 Digital, For Example: 4 on behalf of 4A, 10 on behalf of 10A, 08 on behalf of 0.8A Channel Polarity Code N on behalf of N channel P on behalf of P channel F S J X X N E X X SJ on behalf of Super Junction

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9 Dimensions

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9 Dimensions(continues)

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10 Attentions

 ROUM Semiconductor Technology CO.,LTD. reserves the right to change the specification without prior notice! The customer should obtain the latest version of the information before making the order and verify that the information is complete and up to date.  It is the responsibility of the purchaser for any failure or failure of any semiconductor product under certain conditions. It is the responsibility of the purchaser to comply with safety standards and to take safety measures in the system design and machine manufacturing of Roma products in order to avoid potential risk of failure. Injury or property damage.  Product promotion is endless, our company will be dedicated to provide customers with better products.

11 Appendix

Revision history: Date REV . Description Page 2017.04.10 1.0 Original