D60N10 WXDH | Alldatasheet

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Technical content

ROUM Semiconductor Technology CO.,LTD. Rev. 1.0 www.roum.cn Page 1 of 10 D60N10 60A 100V N-channel Enhancement Mode Power MOSFET

4 Electrical Characteristics

4.1 Absolute Maximum Rating (Tc=25℃,unless otherwise noted)

Parameter Symbol Value Units Maximum Drian-Source DC V oltage VDS 100 V Maximum Gate-Drain V oltage VGS ±20 V Drain Current(continuous) ID（T=25℃） （T=100℃） (T=125℃) A 33 160 Avalanche current IAS 34 A Single Pulse Avalanche Energy(Note 1) EAS 173 mJ Total Dissipation Ta=25℃ Ptot 2 W TC=25℃ Ptot 115 W Junction Temperature Tj 175 ℃ Storage Temperature Tstg -55～175 ℃

1 Description

These silicon N -channel Enhanced VDMOSFETs, is obtained by the self -aligned planar technology wh ich reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.

2 Features

  • Lead free and Green Device Available
  • Low Rds-on to Minimize Conductive Loss
  • High avalanche Current
  • 100% Single Pulse Avalanche Energy Test
  • 100% ΔVDS Test

3 Applications

  • Power Supply
  • DC-DC Converters
  • Full Bridge Control VDSS = 100V RDS(on) （TYP)= 14.5mΩ ID = 60A 1 2 3 4 5 6 7 8 A B C D 87654321 D C B A Title N u mb er R ev isio nSize D D ate: 1 0 -A p r-2 0 1 7 Sh eet o f File: D :\\ Pr og ram Files\\p ro tel 99 se\\ 文件夹\\W X D HD raw n B y : G S D TO-252

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4.2 Thermal Characteristics

Parameter Symbol Value Unit Thermal Resistance Junction to Case-sink RthJC 1.30 ℃/W Thermal Resistance Junction to Ambient RthJA 62.5 ℃/W

4.3 Electrical Characteristics(Tc=25℃,unless otherwise noted)

Parameter Symbol Test Condition Value Units Min Typ Max Off Characteristics Drain-source Breakdown V oltage BVDSS ID=250μA,VGS=0V 100 -- -- V Drain-to-Source Leakage Current IDSS VDS=80V ,VGS=0V ,TC=25℃ -- -- 1 μA VDS=80V ,VGS=0V ,TC=125℃ -- -- 100 μA Gate-to-Source Forward Leakage IGSSF VGS=+20V -- -- 100 nA Gate-to-Source Reverse Leakage IGSSR VGS=-20V -- -- -100 nA On Characteristics(Note 5) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 2 2.8 4 V Drain-source on Resistance RDS(on) VGS=10V ,ID=20A -- 14.5 1.6 mΩ Dynamic Characteristics(Note 6) Input Capacitance Ciss VGS=0V ,VDS=25V ,f=1.0MHz -- 4470 -- pF Output Capacitance Coss -- 290 -- Reverse Transfer Capacitance Crss -- 191 -- Switching Characteristics(note6) Turn-on Delay Time td(on) ID=20A, VDD=50V, RG=6.8Ω VGS=10V -- 25 -- nS Turn-on Rise Time tr -- 130 -- nS Turn-off Delay Time td(off) -- 61 -- nS Turn-off Fall Time tf -- 120 -- nS Total Gate Charge Qg ID=20A,VDD=50V ,VGS=10V -- \`86 -- nC Gate-to-Source Charge Qgs -- 19 -- Gate-to-Drain(“Miller”) Charge Qgd -- 27 -- Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VFSD VGS=0V ,IS=20A -- -- 1.3 V Diode Forward Current (Note 2) IS -- -- 20 A Reverse Recovery Time trr TJ=25℃,IS=20A, -- 82 -- nS

ROUM Semiconductor Technology CO.,LTD. Rev. 1.0 www.roum.cn Page 3 of 10 D60N10 Reverse Recovery Charge Qrr dIi/dt=100A/μS,VGS=0V -- 201 -- uC Notes： 1. L=0.3mH,IAS=34A, Start TJ=25℃. 2. ISD=60A,di/dt≤100A/μs,VDD≤BVDSS, Start TJ=25℃. 3: Repetitive rating, pulse width limited by maximum junction temperature. 4: Surface mounted on FR4 Board, t≤10sec. 5: Pulse width ≤ 300μs, duty cycle ≤ 2%. 6: Guaranteed by design, not subject to production.

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5 Typical cha racteristics diagrams

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5 Typical characteristics diagra ms(continues)

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6 Product Names Rules

7 Product Specifications and Packaging Models

Product Model Package Type Mark Name RoHS Package Quantity 60N10 TO-220C 60N10 Pb-free Tube 1000/box F60N10 TO-220F F60N10 Pb-free Tube 1000/box B60N10 TO-251 B60N10 Pb-free Tube 1000/box D60N10 TO-252 D60N10 Pb-free Tape ＆ Reel 3000/box I60N10 TO-262 I60N10 Pb-free Tube 1000/box E60N10 TO-263 E60N10 Pb-free Tape ＆ Reel 800/box Rated V oltage Code With 2 Digital,For Example: 60 on behalf of 600V , 06 on behalf of 60v Special Function Code E on behalf of build-in ESD Nothing on behalf of not ESD Packaging Code 220F: F 220: Nothing 251: B 252: D 262: I 263: E Rated Current Code With 1-2 Digital, For Example: 4 on behalf of 4A, 10 on behalf of 10A, 08 on behalf of 0.8A Channel Polarity Code N on behalf of N channel P on behalf of P channel F X X N E X X

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8 Dimensions

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8 Dimensions(continues)

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9 Attentions

 ROUM Semiconductor Technology CO.,LTD. reserves the right to change the specification without prior notice! The customer should obtain the latest version of the information before making the order and verify that the information is complete and up to date.  It is the responsibility of the purchaser for any failure or failure of any semiconductor product under certain conditions. It is the responsibility of the purchaser to comply with safety standards and to take safety measures in the system design and machine manufacturing of Roma products in order to avoid potential risk of failure. Injury or property damage.  Product promotion is endless, our company will be dedicated to provide customers with better products.

10 Appendix

Revision history: Date REV . Description Page 2017.04.10 1.0 Original