E50N06 WXDH | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 10

Technical content

ROUM Semiconductor Technology CO.,LTD. Rev. 1.0 www.roum.cn Page 1 of 10 E50N06

1 Descrip tion

These N-channel Enhanced VDMOSFETs Used advanced trench technology design , provided excellent RDSON and low gate charge. Which accords with the RoHS standard.

2 Features

  • Fast Switching
  • Low ON Resistance(Rdson≤18mΩ)
  • Low Gate Charge(Typical:17nC)
  • Low Reverse Transfer Capacitances(Typical:150pF)
  • 100% Single Pulse Avalanche Energy Test
  • 100% Δ VDS Test

3 Applications

  • Power switching applications
  • DC-DC Convertors
  • UPS power supply
  • Load switch 50A 60V N-channel Enhancement Mode Power MOSFET

4 Electrical Characteristics

4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted)

PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 60 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID（T=25℃） （T=100℃） 66 A 50 A Drain Current(Pulsed)(Note 1) IDM 250 A Single Pulse Avalanche Energy(Note 5) EAS 120 mJ Avalanche Current(Note 1) IAS 15 A Total Dissipation Ta=25℃ Ptot 2 W TC=25℃ Ptot 88 W Junction Temperature Tj 175 ℃ storage Temperature Tstg -55～175 ℃ Maximum Temperature for soldering TL 300 ℃

4.2 Thermal Characteristics

PARAMETER SYMBOL VALUE UNIT Thermal Resistance Junction to Case-sink RthJC 1.7 ℃/W Thermal Resistance Junction to Ambient RthJA 62.5 ℃/W VDSS = 60V RDS(on) （TYP)= 12mΩ ID = 50A TO-263 1 2 3 4 5 6 7 8 A B C D 87654321 D C B A Title N u mb er R ev isio nSize D D ate: 1 0 -A p r-2 0 1 7 Sh eet o f File: D :\\ Pr og ram Files\\p ro tel 99 se\\ 文件夹\\W X D HD raw n B y : G S D

ROUM Semiconductor Technology CO.,LTD. Rev. 1.0 www.roum.cn Page 2 of 10 E50N06

4.3 Electrical Characteristics(Tc=25℃,unless otherwise noted)

PARAMETER SYMBOL Test Condition VALUE UNIT MIN TYP MAX Off Characteristics Drain-source Breakdown Voltage BVDSS ID=250μA,VGS=0V 60 -- -- V Drain-to-Source Leakage Current IDSS VDS=60V,VGS=0V,TC=25℃ -- -- 1 μA VDS=48V,VGS=0V,TC=125℃ -- -- 100 μA Gate-to-Source Forward Leakage IGSSF VGS=+20V -- -- 100 nA Gate-to-Source Reverse Leakage IGSSR VGS=-20V -- -- -100 nA On Characteristics(Note 3) Gate threshold voltage VGS(th) VDS=VGS,ID=250μA 2 -- 4 V Drain-source on Resist ance RDS(on) VGS=10V,ID=20A -- 12 18 mΩ Dynamic Characteristics(Note 4) Forward Transfer cond uctance gfs VDS=15V,ID=10A -- 9.5 -- S Input Capacitance Ciss VGS=0V,VDS=20V,f=1.0MHz -- 2068 -- pF Output Capacitance Coss -- 200 -- Reverse Transfer Cap acitance Crss -- 150 -- Gate Resisitance RG VDS=0V,VGS=0V,F=1MHz -- 1.4 -- Ω Switching Characteristics(note4) Turn-on Delay Time td(on) VDD=20V,RL=20Ω， ID=1A,VGS=10V, RGEN=6Ω -- 14 -- nS Turn-on Rise Time tr -- 13 -- nS Turn-off Delay Time td(off) -- 20 -- nS Turn-off Fall Time tf -- 7.2 -- nS Total Gate Charge Qg ID=20A,VDS=20V,VGS=10V -- 51 -- nC Gate-to-Source Charge Qgs -- 11 -- Gate-to-Drain(“Miller”)C harge Qgd -- 17 -- Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VFSD VGS=0V,IS=2A -- -- 1.5 V Diode Forward Current (Note 2) IS -- -- 2 A Reverse Recovery Time trr TJ=25℃,IF=20A, dIF/dt=100A/μS,VGS=0V -- 28 -- nS Reverse Recovery Charge Qrr -- 24 -- nC Notes： 1: Repetitive rating, pulse width limited by maximum junction temperature. 2: Surface mounted on FR4 Board, t≤10sec. 3: Pulse width ≤ 300μs, duty cycle ≤ 2%. 4: Guaranteed by design, not subject to production. 5. L=10mH,ID=3.58A,VDD=50V,VGATE=600V,Start TJ=25℃. 6. ISD=2A,di/dt≤100A/μs,VDD≤BVDSS, Start TJ=25℃.

ROUM Semiconductor Technology CO.,LTD. Rev. 1.0 www.roum.cn Page 3 of 10 E50N06

5 Typical characteristics diagrams

A B C D 87654321 D C B A Title N u mb er R ev isio nSize D D ate: 2 4 -May -2 0 1 7 Sh eet o f File: C :\\U sers\\A d min istrato r\\D esk to p \\5 0 N0 6 . d d bD raw n B y : 0 20 60 80 100 0 0.5 2.0 2.5 100 1.0 4.5V 5.5V 4 5 7 8 -50 0 100 150 0.2 0.8 175 1.0 0.6 0.4 1.2 0.2 0.4 1.00.6 100 0.8 0.1 -50 -25 75 125 0.2 1.0 150 1.2 0.8 0.6 1.4 3.0 V GS=6,7,8,9,10V vDS -Drain-Source Vol tage(V) Figure.1 Output Characterristics I D -Drain Current(A) ID -Drain-Current(A) R DS(ON ) -On-Resistance(mΩ) V GS=10V Figure.2 Drain- Source On Resistance 9 11 VGS -Gate-Source Voltage(V) Figure.3 Drain-Source On Resistance R DS(ON ) -On-Resistance(mΩ) Tj -Junction T emperature( ℃) Figure.4 Gate Threshold Voltage Normalized Threshold Voltage 1.41.2 170 Tj=25℃ Tj=175℃ VSD -Source Drain Voltage(V) Figure.5 Source- Drain Diode Forward I S -Source Current(A) 0 100 1.6 1.8 Tj -Junction T emperature( ℃) Figure.6 Drain-Source On Resistance Normalized On Resistance ID =33A I D =250μA VGS =10V I D =33A 1.5 120 140 160 180 200 -25 25 75 125 200 2.0 2.2 0.4 50 175 DC

ROUM Semiconductor Technology CO.,LTD. Rev. 1.0 www.roum.cn Page 4 of 10 E50N06

5 Typical characteristics diagrams(continues)

A B C D 87654321 D C B A Title N u mb er R ev isio nSize D D ate: 2 4 -May -2 0 1 7 Sh eet o f File: C :\\U sers\\A d min istrato r\\D esk to p \\5 0 N0 6 . d d bD raw n B y : 0 5 25 1800 2400 1200 600 Ciss Coss Crss 0 49 7 21 28 100 1000 0.1 0.01 0.1 1 10 100 100 μ S 10 m S 1 m S 1E-3 0.1 1 100.011E-5 1E-31E-4 0.01 0.1 Tc=25℃ 0 . 0 1 0. 2 0. 02 S i n g le Pu ls e 0. 1 D=0. 5 0 40 120 160 200 100 125 0 40 100 180 200 16020 12080 140 0. 05 vDS -Drain-Source Vol tage(V) Figure.7 Capacitance C-C apa cita nce(pF) QG-Gate Charge Figure.8 Gate Charge VGS -G ate-Source Voltage(V) VD =48V I D =33A Frequency =1MHZ 20 60 100 140 180 Tc=25℃ Tj -Junction T emperature( ℃) Figure.9 Power Dissipation P to t -Power(W) Tc=25℃ V G=10V Tj -Junction T emperature( ℃) Figure.10 Drain Current I D -Drain Current(A) Rds(on) Li m it e d vDS -Drain-Source Vol tage(V) Figure.11 Safe Operation Area I D -Drain Current(A) Square Wave Pulse Duration(Sec) Figure.12 T hermal Transient Impedance Normalized Effecitive Transient 3000 3600 4200 35 42 F50N06 F50N06

ROUM Semiconductor Technology CO.,LTD. Rev. 1.0 www.roum.cn Page 5 of 10 E50N06

6 Typical Test Circuit and Waveform

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 A B C D 16151413121110987654321 D C B A Title N u mb er R ev isio nSize E D ate: 2 5 -May -2 0 1 7 Sh eet o f File: C :\\ U sers\\A dm in istrat or \\D esk to p \\ 模板\\w x d hq x t ( 1) . d dbD raw n B y : Same Type 50KΩ DUT VDS 200nF V 12V 200nF is DUT GS VGS 10V Q gs Q gd Q g VDS RL V DDDUT VGS RG 10V VDS 90% 10% VGS td(on) tr td(off) tf I D di/dt=100A/μA Q trr rr di/dt adj. Double Pulse D.U.T I L Current Pump V DD D 1) Gate Charge T est Circuit & Waveform 2) Resistive Switching T est Circuit & Waveforms 3) Diode Reverse Recovery Test Circuit & Waveform

ROUM Semiconductor Technology CO.,LTD. Rev. 1.0 www.roum.cn Page 6 of 10 E50N06

6 Typic al Test Circuit and Waveform(continues)

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 A B C D 16151413121110987654321 D C B A Title N u mb er R ev isio nSize E D ate: 2 5 -May -2 0 1 7 Sh eet o f File: C :\\ U sers\\A dm in istrat or \\D esk to p \\ 模板\\w x d hq x t ( 1) . d dbD raw n B y : VDS I D DUT V DD L 10V RG BV SS I AS V DD I D(t) V DS(t) tp 4) Unclamped Inductive Switching Test Circuit & Waveforms

7 Product Names Rules

With 2 Digital,For Example: 60 on behalf of 600V, 06 on behalf of 60v Special Function Code E on behalf of build-in ESD Nothing on behalf of not ESD Packaging Code 220F: F 220: Nothing 251: B 25 2: D 262: I 263: E Rated Current Code With 1-2 Digital, For Example: 4 on behalf of 4A, 10 on behalf of 10A, 08 on behalf of 0.8A Channel Polarity Code N on behalf of N channel P on behalf of P channel F X X N E X X

ROUM Semiconductor Technology CO.,LTD. Rev. 1.0 www.roum.cn Page 7 of 10 E50N06

8 Product Specifications and Packaging Models

Product Model Package Type Mark Name RoHS Package Quantity 50N06 TO-220C 50N06 Pb-free Tube 1000/box F50N06 TO-220F F50N06 Pb-free Tube 1000/box B50N06 TO-251 B50N06 Pb-free Tube 1000/box D50N06 TO-252 D50N06 Pb-free Tape ＆ Reel 3000/box I50N06 TO-262 I50N06 Pb-free Tube 1000/box E50N06 TO-263 E50N06 Pb-free Tape ＆ Reel 800/box

9 Dimensions

ROUM Semiconductor Technology CO.,LTD. Rev. 1.0 www.roum.cn Page 8 of 10 E50N06

9 Dimensions(continues)

ROUM Semiconductor Technology CO.,LTD. Rev. 1.0 www.roum.cn Page 9 of 10 E50N06

ROUM Semiconductor Technology CO.,LTD. Rev. 1.0 www.roum.cn Page 10 of 10 E50N06

10 Attentions

 ROUM Semiconductor Technology CO.,LTD. reserves the right to change the specification without prior notice! The customer should obtain the latest version of the information before making the order and verify that the information is complete and up to date.  It is the responsibility of the purchaser for any failure or failure of any semiconductor product under certain conditions. It is the responsibility of the purchaser to comply with safety standards and to take safety measures in the system design and machine manufacturing of Roma products in order to avoid potential risk of failure. Injury or property damage.  Product promotion is endless, our company will be dedicated to provide customers with better products.

11 Appendix

Revision history: Date REV. Description Page 2017.03.14 1.0 Original