ESAC83M-004R FUJI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
Features
Insulated package by fully molding Low VF Super high speed switching High reliability by planer design
Applications
High speed power switching Maximum ratings and characteristics Absolute maximum ratings Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average output current Surge current Operating junction temperature Storage temperature Symbol V RRM VRSM Io IFSM Tj Tstg Conditions Sine wave 10ms 120 -40 to +150 -40 to +150 Unit V V A A Electrical characteristics (Ta=25°C Unless otherwise specified ) Item Forward voltage drop Reverse current Thermal resistance Symbol V FM IRRM Rth(j-c) Conditions IFM=8A VR=VRRM Junction to case Max. 0.55 2.5 Unit V mA °C/W tw=500ns, duty=1/40 Square wave, duty=1/2 Tc=99°C Rating 20* SCHOTTKY BARRIER DIODE Outline drawings, mm Connection diagram JEDEC EIAJ 1 32 * Average forward current of centertap full wave connection
This product is scheduled be obsolete on march 2007. Not recommend for new design. ESAC83M-004R (20A)(40V / 20A ) Characteristics Forward characteristics VF [V] IF [A] Reverse characteristics VR [V] IR [mA] Reverse power dissipation WR [W] VR [V] Tc [°C ] Io [A] Output current-case temperature WF [W] Io [A] Forward power dissipation Junction capacitance characteristics Cj [pF] VR [V] 0 5 10 15 5 10 30 50 100 0.1 0.01 0 10 20 30 40 50 0 10 20 30 40 50 60 70 7.5 5.0 2.5 0 2 4 6 8 10 12 14 16 18 20 3000 1000 500 300 100 140 120 100
This product is scheduled be obsolete on march 2007. Not recommend for new design. ESAC83M-004R (20A)(40V / 20A ) Transient thermal impedance t [sec.] [°C/W] Surge capability IFSM [A] 1 3 5 10 30 10-3 10 -2 10 -1 10 0 10 1 10 2 300 100 101 100 10-1 [time] (at 50Hz)