ESAC33M FUJI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
Features
Insulated package by fully molding High voltage by mesa design High reliability
Applications
Maximum ratings and characteristics Absolute maximum ratings Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average output current Surge current Operating junction temperature Storage temperature Symbol V RRM VRSM IO IFSM Tj Tstg Conditions -40 to +150 -40 to +150 Unit V V A A Electrical characteristics (T a=25°C Unless otherwise specified ) Item Forward voltage drop Reverse current Reverse recovery time Thermal resistance Symbol V FM IRRM t rr Rth(j-c) Conditions IFM =2.0A VR =V RRM IF=0.1A, IR =0.1A Junction to case Max. 1.4 500 100 3.5 Unit V µA ns °C/W Square wave, duty=1/2, Tc=95°C Sine wave 10ms Rating -02 200 200 Connection diagram *Average forward current of centertap full wave connection ESAC33M- C ESAC33M- N ESAC33M- D JEDEC EIAJ SC-67
ESAC33M(C,N,D)(8A)(200V / 8A ) Characteristics Forward characteristics VF [V] Reverse characteristics VR [V] IF [A] IR [µA] Surge capability IFSM [A] Forward power dissipation Io [A] W F [W] 0 100 200 300 0 1 2 3 4 5 6 0.5 0.1 1.0 0.1 0.01 0.005 Junction capacitance characteristics Cj [pF] VR [V] Output current-case temperature Tc [°C] 0 2 4 6 8 10 Io [A] 100 5 10 30 50 1001 3 5 10 30 140 120 100 [time] (at 50Hz)
Transient thermal impedance [°C/W] t [sec.] ESAC33M(C,N,D)(8A)(200V / 8A ) 10-3 10-2 10-1 100 101 102 101 100 10-1