ESAC25M-02C FUJI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

TffEE="" "= EEE a ee “ ESAC25M-02C,N,D . FUJI SILICON DIODE ESAC25M-04C,N,D SPECIFICATION ———LNUACR SM=ONCN,D SPECIFICATION 1. SCOPE This specification provides the ratings and the test requirement for silicon diode : 2. OUT VIEW Body surface shall be smooth and free of contamination. ‘Dimensions 7 . are described in MK5C1B187 ; 3. IDENTIFICATION Diode shall be marked legibly with‘type name, polarity mark,lot No. 4. RATINGS 4.1 MAXIMUM RATINGS . syrE Byiie = = iti Non repetitive peak reverse voltage ean ze8Es —1342%] | Aberage forward current | to [Sgr Site o5 °c | wo | a | Er sos ESELE

4.2 ELECTRICAL CHARACTERISTICS (Ta=25°C unless otherwise specified)

; 4.3 MECIIANICAL CHARACTERISTICS a PS] E | Name] APPROVED Fuji Electric Co,Ltd. [oRawn 786 08-19 |i asa aul — a6: Fl Z. 17 EA U6= 6-21 Ss J. tt || LZlezn| é| MS5 C6333 3 FE wate eS SS SS So en Gone lence

  1. TEST AND INSPECTION Standard test condition : Ta=25°C, 65% RH unless otherwise specified. . es Inspected with eye and measure Item 2. or 3, Forward and reverse | Test on the standard conditions . Characteristics Item 4. -40 C125 ,each 0.5hour, Scycles Item 4. leat cycle removing interval 5minutes. Humidity test 60+2 , 95%,500+5hours solder bath methode Solderabi lity 230 +5 T, Ssec. Ig shall be Bees within 250 uh F235 Soldering heat 260 °C. 10sec. 1.5 mm from the body £3 g25 nn Solderability shall be Pat Life test Te=95 C, rated load, 500+5hours | more than 95%. sas ae eritz Lead pull test ~5Keg. 10 sec : fees ~ iste A The lead shall not be 52353 @A-B-A (1 cycle ) | broken and loss. eBEEs @A-C-A (1 cycle ) Borge “a x egeae zfs Lead bend test B popersfees c

0.5 Ke 3 cycles

aE | Full Electric Cota Josavn| = = ——— g 2/7 FA [revo] [| =| MS5 C6333 3-4 td 5083 MAGLI

  1. DERATING : Fig. 1. Derating Curve 100 4 80 i a 60 sets z Phe 3” gogee a bores S$ 20 ESES a EESPE * esits 0) EEggS 0 20 40 60 80 100 120 140 160 —istes ERESE Ambient Temperature (°C) ERESE og85? Edie eoses egeae EEEEZ en oe Fu Electro Co,ttd | Tf i 37 A [— 3 SS SS SS es a SS es MAALE

. FUJI_SILICON DIODE TYPE : ESAC25M-[7 TYPE 2 SSACCOMW is OUT VIEW 10,5MAX. 3 948-3 4. SMAX. . 6.040-4 0t0-2 A ©. an Ven 4 S oe) al ol Se BEES a Bese S cela : eesae 0.2 & eet ge | [a2 . ibgbe a ffiee a —8325 Baget > nat0-2 5140.7 2.740-2 gee zsutz 5.0gt0-4 Dimensions are in millimeter. MARKING CONNECTION ESAC25M-02C_ 9 q 2) O 1 lies ; Lot No. ESAC25M-02N_ 2 60 Lot submark. C25M ‘Type name. 1 “Pi-é- <——_ Polarity mark. 3 02C¢ Voltage class. ESAC25M-02D_ 2 1 odes Fuji Electric Co.Ltd. nawni|1986- 10-03 MORTYAMA u ia —- cuecesof = - [| ry a pimescre1e7 FE aver ES SS SS SS SS | ES SS SS ST r