ES5ABF HOTTECH | Alldatasheet

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SURFACE MOUNT SUPER FAST RECTIFIER

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 G lass Passivated Die Construction  Super-Fast Recovery Time For High Efficiency  Low Forward Voltage Drop and High Current Capability  Ideally Suited for Automated Assembly  Plastic Material: UL Flammability Classification Rating 94V-0 M ECHANICAL DATA  C ase: SMBF Molded plastic  Terminals: Pure tin plated, lead free  Polarity: Indicated by cathode band  Weight: 57mg (approx.) MAX IMUM RATINGS AN D ELEC TRICA L CHARAC TERIS TICS Ratings at 25 °C ambient temperature unless otherwise specified. S ingle phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Param eter Sym bol ES5ABF ES5BBF ES5DBF ES5GBF ES 5JBF Un it M aximum Repetitive Peak Reverse Voltage V RRM 50 100 200 400 600 V M aximum RMS Voltage V RMS 35 70 140 280 420 V Maximum DC Blocking Voltage V DC 50 100 200 400 600 V M aximum Average Forward Rectified Current at TA =75 °C IF(A V) 5.0 A Peak Forward Surge Current 8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC) IFSM 150 135 A Ma ximum Instantaneous Forward Voltage at 5 A V F 1.0 1.25 1.7 V Ma ximum DC Reverse Current at Rated DC Blocking Voltage TA = 25 °C TA =100 °C IR 10.0 100.0 µA Ma ximum reverse recovery time (NOTE 1) trr 35 nS Typical Junction Capacitance (NOTE 2) C J 95 pF Maximum Thermal Resistance (NOTE 3) R θJL 45 °C /W O perating and Storage Temperature Range TJ, TS - 50 to + 150 °C Note: 1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A 2.Measured at 1MHz and applied reverse voltage of 4.0V D.C. ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 1 / 3 SMBF Cathode

SURFACE MOUNT SUPER FAST RECTIFIER ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 2 / 3 50 ohm Noninductive 25Vdc approx D.U.T 10 ohm Noninductive NonInductive 1 ohm OSCILLOSCOPE Note 1 PULSE GENERATOR Note 2 Note ：1.Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram 25 50 75 100 125 150 175 Average Forward Current (A) Lead Temperature ( °C) Fig.2 Maximum Average Forward Current Rating Single phase half wave resistive or inductive P.C.B mounted on Fig.3 Typical Reverse Characteristics I - Current ( A)R Reverse μ 20 100600 0.1 1.0 % of PIV.VOLTS 100 40 80 300 T =25J °C T =75J °C T =125J °C Fig.5 Typical Junction Capacitance Junction Capacitance ( pF) Reverse Voltage (V) 1 1000.1 10 T =25J °C f = 1.0MHz V = 50mVsig p-p 100 125 175 10 100 Fig.6 Maximum Non-Repetitive Peak Forward Surage Current Peak A)Forward Surage Current ( Number of Cycles 8.3 ms Single Half Sine Wave (JEDEC Method) -0.25 -1.0 +0.5 trr 10ns/div Set time Base for 10ns/div Fig.4 Typical CharacteristicsForward 2.0 2.51.50 0.01 0.1 1.0 0.5 1.0 0.001 Instaneous Forward Current (A) Instaneous Forward Voltage (V) T =25J °C ES5JB F ES5EBF/WS5GBF ES5ABF~E S5DBF 150 ES5EBF/WS5JBF ES5ABF~ES5DBF 100 150 125

SURFACE MOUNT SUPER FAST RECTIFIER ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 3 / 3 Package Outline DimensionsSMBF A C ∠ALL ROUND V AM e UNIT mm max min mil max min A C D E HE ∠ 2.2 1.9 e Bottom View HE g Top View 1.0 g g ∠ALL ROUND E D A E pad pad 51 10 173 146 216 43 7 165 138 200