EPW4-1200-S020A WOLFSPEED | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 5

Technical content

Features

  • 4th Generation SiC Merged PIN Schottky Technology
  • Zero Reverse Recovery Current
  • High-Frequency Operation
  • Temperature-Independent Switching Behavior
  • AEC-Q101 Qualified and PPAP Capable
  • Humidity Resistant Benefits
  • Replace Bipolar with Unipolar Rectifiers
  • Essentially No Switching Losses
  • Higher Efficiency
  • Reduction of Heat Sink Requirements
  • Parallel Devices Without Thermal Runaway
  • Ideal for Outdoor Environments

Applications

  • Boost diodes in PFC or DC/DC stages
  • Free Wheeling Diodes in Inverter stages
  • AC/DC converters
  • Automotive and Traction Power Conversion
  • PV Inverters Chip Chip Outline VDS 900 V I D @ 25˚C 11.5 A RDS(on) 280 mΩ Ordering Part Number Wafer Size Die Size Anode Cathode EPW4-1200-S020A-FR6* 150mm 3.08 x 3.08 mm2 Al Ni/Au *Bare die are shipped as sawn full wafers mounted to UV tape attached to a 150mm frame. Electronic wafer maps are provided.

EPW4-1200-S020A Rev. -, 07-2018 Mechanical Parameters Parameter Typ. Unit Die Size 3.08 x 3.08 mm Anode Pad Size 2.79 x 2.79 mm Anode Pad Opening 2.51 x 2.51 mm Thickness 377 ± 10% μm Wafer Size 150 mm Anode Metalization (Al) 4 μm Cathode Metalization (Ni/Au) 0.9 μm Frontside Passivation Polyimide

Electrical Characteristics

Symbol Parameter Typ. Max. Unit Test Conditions Note VF Forward Voltage 1.5 2.2

1.8 V IF = 20 A TJ=25°C

IF = 20 A TJ=175°C Fig. 1 IR Reverse Current 35 200 μA VR = 1200 V TJ=25°C VR = 1200 V TJ=175°C Fig. 2 QC Total Capacitive Charge 99 nC VR = 800 V, IF = 20 A di/dt = 200 A/μs TJ = 25°C Fig. 3 C Total Capacitance 1500 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz VR = 800 V, TJ = 25˚C, f = 1 MHz Fig. 4 EC Capacitance Stored Energy 28 μJ VR = 800 V

EPW4-1200-S020A Rev. -, 07-2018 Chip Dimensions symbol dimension mm inch A 3.08 0.121 B 3.08 0.121 C 2.51 0.099 D 2.51 0.099 A B C D Diode Model VT RT Diode Model CSD04060 Vf T = VT + If*RT VfT = VT+If*RT Note: TJ = Diode Junction Temperature In Degrees Celsius, valid from 25°C to 175°C

CPW4-1200S010 Rev. A Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc.

4600 Silicon Drive

Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power

  • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
  • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree represen- tative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
  • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Notes
  • Wolfspeed E-Series Family: http//wolfspeed.com/E-Series
  • Wolfspeed SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes
  • Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2
  • SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i Related Links EPW4-1200-S020A Rev. -, 07-2018