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Technical content
Features
Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz
- Output Power 50W
- D r a i n E f f i c i e n c y 6 5 %
- -40°C to 85°C Operation
Applications
Commercial Wireless Infrastructure Cellular and WiMAX Infrastructure Civilian and Military Radar General Purpose Broadband Amplifiers Public Mobile Radios Industrial, Scientific and Medical RF3931S2 2-Piece sample bag RF3931SB 5-Piece bag RF3931SQ 25-Piece bag RF3931SR 100 Pieces on 7” short reel RF3931TR7 750 Pieces on 7” reel RF3931PCK-411 Fully assembled evaluation board optimized for 2.14GHz; 48V DS120406 Package Style: Hermetic 2-Pin Flanged Ceramic
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. Absolute Maximum Ratings Parameter Rating Unit Drain Voltage (VD)1 5 0 V Gate Voltage (VG) -8 to +2 V Gate Current 23 mA Operational Voltage 65 V Ruggedness (VSWR) 10:1 Storage Temperature Range -55 to +125 °C Operating Temperature Range (T L)- 4 0 t o + 8 5 ° C Operating Junction Temperature (TJ) 200 °C Human Body Model Class 1A MTTF (TJ < 200°C, 95% Confidence Limits)* 3 x 106 hours Thermal Resistance, RTH(junction to case) measured at TC = 85°C, DC bias only 3.6 °C/W *MTTF - median time to failure for wear-out failure mode (30%ldss degradation) which is determined by the technology reliability. Refer to product qualification report for FIT (random) Failure rate. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page two. Bias Conditions should also satisfy the following expression: PDISS < (TJ – TC) / RTH J-C and TC = TCASE Parameter Specification Unit ConditionMin. Typ. Max. Recommended Operating Conditions Drain Voltage (VDSQ)2 8 4 8 V Gate Voltage (VGSQ)- 5 - 3 - 2 . 5 V Drain Bias Current 130 mA Frequency of Operation DC 3500 MHz Capacitance CRSS 4p F V G = -8V, VD = 0V CISS 17 pF V G = -8V, VD = 0V COSS 12 pF V G = -8V, VD = 0V DC Function Test IG (OFF) - Gate Leakage 2 mA V G = -8V, VD = 0V ID (OFF) - Drain Leakage 2.5 mA V G = -8V, VD = 48V VGS (TH) - Threshold Voltage -4.2 V V G = -8V, ID = 6.6mA VDS (ON) - Drain Voltage at high current 0.25 V V G = 0V, ID = 1.5A RF Function Test [1],[2] VGS (Q) -3.5 V V D = 48V, ID = 130mA Gain 10 12 dB CW, P OUT = 45.8dBm, f = 2140MHz Drain efficiency 55 60 % CW, P OUT = 45.8dBm, f = 2140MHz Input Return Loss -12 -10 dB CW, P OUT = 45.8dBm, f = 2140MHz Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder.
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. Parameter Specification Unit ConditionMin. Typ. Max. RF Typical Performance [1],[2] Small Signal Gain 20 dB CW, f = 900MHz Small Signal Gain 14 dB CW, f = 2140MHz Output Power at P3dB 47 dBm CW, f = 900MHz Output Power at P3dB 46.5 dBm CW, f = 2140MHz Drain Efficiency at P3dB 65 % CW, f = 900MHz Drain Efficiency at P3dB 65 % CW, f = 2140MHz [1] Test Conditions: CW Operation, VDSQ = 48V, IDQ = 130mA, T = 25°C [2] Performance in a standard tuned test fixture
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. Typical Performance in standard 2.14GHz fixed tuned test fixture (CW, T = 25°C, unless noted) -25 -23 -21 -19 -17 -15 -13 -11 2080 2110 2140 2170 2200 Input Return Loss (dB) Gain (dB) Frequency (MHz) Small Signal Performance vs. Frequency, Pout = 30dBm (Vd = 48V, Idq = 130mA) Gain IRL Fixed tuned test circuit -25 -23 -21 -19 -17 -15 -13 -11 2080 2100 2120 2140 2160 2180 2200 Input Return Loss (dB) Gain (dB) Frequency (MHz) Gain/IRL vs. Frequency, Pout = 46dBm (CW, Vd = 48V, Idq = 130mA) Gain IRL Fixed tuned test circuit 2080 2100 2120 2140 2160 2180 2200 Drain Efficiency (%) Frequency (MHz) Drain Efficiency vs. Frequency, Pout = 46dBm (CW, Vd = 48V, Idq = 130mA) Eff Fixed tuned test circuit
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. 29 31 33 35 37 39 41 43 45 47 Drain Efficiency (%) Gain (dB) Pout, Output Power (dBm) Gain/ Efficiency vs. Pout, f = 2140MHz (CW, Vd = 48V, Idq = 130mA) Gain Drain Eff 30 32 34 36 38 40 42 44 46 Drain Efficiency (%) Gain (dB) Pout, Output Power (dBm) Gain/ Efficiency vs. Pout, f = 2140MHz (Pulsed 10% duty cycle, 10uS, Vd = 48V, Idq = 130mA) Gain Drain Eff -50 -45 -40 -35 -30 -25 -20 -15 -10 001011 IMD3, Intermodula/g415on Distor/g415on (dBc) Pout, Output Power (W-PEP) IMD3 vs. Pout (2-Tone 1MHz Sepera/g415on, Vd = 48V, Idq varied, fc = 2140MHz) 65mA 100mA 130mA 260mA 390mA 001011 Gain (dB) Pout, Output Power (W-PEP) Gain vs. Pout (2-Tone 1MHz Sepera/g415on, Vd = 48V, Idq varied, fc = 2140MHz) 65mA 100mA 130mA 260mA 390mA -70 -60 -50 -40 -30 -20 -10 001011 Intermodula/g415on Distor/g415on (IMD - dBc) Pout, Output Power (W- PEP) IMD vs. Output Power (Vd = 48V, Idq = 130mA, f1 = 2139.5MHz, f2 = 2140.5MHz) -IMD3 IMD3 -IMD5 IMD5 -IMD7 IMD7
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. Typical Performance in standard 900MHz fixed tuned test fixture (CW, T = 25°C, unless noted) -10 880 890 900 910 920 Input Return Loss (dB) Gain (dB) Frequency (MHz) Small Signal Performance vs. Frequency, Pout = 30dBm (Vd = 48V, Idq = 130mA) Gain IRL Fixed tuned test circuit -10 880 890 900 910 920 Input Return Loss (dB) Gain (dB) Frequency (MHz) Gain/IRL vs. Frequency, Pout = 47dBm (CW, Vd = 48V, Idq = 130mA) Gain IRL Fixed tuned test circuit 880 890 900 910 920 Drain Efficiency (%) Frequency (MHz) Drain Efficiency vs. Frequency, Pout = 47dBm (CW, Vd = 48V, Idq = 130mA) Eff Fixed tuned test circuit 29 31 33 35 37 39 41 43 45 47 Drain Efficiency (%) Gain (dB) Pout, Output Power (dBm) Gain/ Efficiency vs. Pout, f = 900MHz (CW, Vd = 48V, Idq = 130mA) Gain Drain Eff
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. 001011 Gain (dB) Pout, Output Power (W-PEP) Gain vs. Pout (2-Tone 1MHz Sepera/g415on, Vd = 48V, Idq varied, fc = 900MHz) 65mA 100mA 130mA 260mA 390mA -60 -50 -40 -30 -20 -10 001011 Intermodula/g415on Distor/g415on (IMD - dBc) Pout, Output Power (W- PEP) IMD vs. Output Power (Vd = 48V, Idq = 130mA, f1 = 899.5MHz, f2 = 900.5MHz) -IMD3 IMD3 -IMD5 IMD5 -IMD7 IMD7 -50 -45 -40 -35 -30 -25 -20 -15 -10 001011 IMD3, Intermodula/g415on Distor/g415on (dBc) Pout, Output Power (W-PEP) IMD3 vs. Pout (2-Tone 1MHz Sepera/g415on, Vd = 48V, Idq varied, fc = 900MHz) 65mA 100mA 130mA 260mA 390mA
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. Package Drawing (Package Style: Flanged Ceramic) Pin Function Description
1 Gate Gate - VG RF Input
2 Drain Drain - VD RF Output
3 Source Source - Ground Base
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. Bias Instruction for RF3931 Evaluation Board ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board. Evaluation board requires additional external fan cooling. Connect all supplies before powering up the evaluation board. 1. Connect RF cables at RF IN and RFOUT. 2. Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this ground terminal. 3. Apply -8V to V G. 4. Apply 48V to V D. 5. Increase V G until drain current reaches 130mA desired bias point. 6. Turn on the RF input.
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. 2.14GHz Evaluation Board Schematic 2.14GHz Evaluation Board Bill of Materials Component Value Manufacturer Part Number C1, C2, C10, C11 33pF ATC ATC800A330JT C3,C14 0.1 F Murata GRM32NR72A104KA01L C4,C13 4.7 F Murata GRM55ER72A475KA01L C5 100 F Panasonic ECE-V1HA101UP C6 2.2pF ATC ATC800A2R2BT C7 0.7pF ATC ATC800A0R7BT C8 1.0pF ATC ATC800A1R0BT C9 3.3pF ATC ATC800A3R3BT C12 100 F Panasonic EEV-TG2A101M C15 10pF ATC ATC800A100JT R1 10 Panasonic ERJ-8GEYJ100V C16, C17, C18, C19 Not used - - PCB RO4350, 0.030" thick dielectric Rogers - /g53/g41/g22/g28/g22/g20 /g38/g26 /g53/g20 /g38/g20/g38/g22/g38/g23 /g57/g42/g36/g55/g40 /g57/g39/g53/g36/g44/g49 /g38/g21 /g24/g19/g3 /g86/g87/g85/g76/g83/g45/g20 /g53/g41/g3/g44/g49 /g45/g21 /g53/g41/g3/g50/g56/g55 /g38/g25 /g38/g27 /g38/g28 /g38/g20/g19/g24/g19/g3 /g86/g87/g85/g76/g83 /g38/g20/g20/g38/g20/g23/g38/g20/g22/g38/g20/g21/g14/g38/g20/g24/g38/g24/g14
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. 2.14GHz Evaluation Board Layout Device Impedances Note: Device impedances reported are the measured evaluation board impedances chosen for a trade off of efficiency, peak power, and linearity performance across the entire frequency bandwidth. Frequency (MHz) Z Source () Z Load ( 2110 2.6 - j3.1 6.5 + j5.8 2140 2.5 - j2.8 6.7 + j6.6 2170 2.4 - j2.5 7.0 + j7.4
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. 900MHz Evaluation Board Schematic 900MHz Evaluation Board Bill of Materials Component Value Manufacturer Part Number C1, C2, C10, C11 68pF ATC ATC800B680JT C3,C14 0.1 F Murata GRM32NR72A104KA01L C4,C13 4.7 F Murata GRM55ER72A475KA01L C5 100 F Panasonic ECE-V1HA101UP C6 12pF ATC ATC800B120 C7 5.6pF ATC ATC800B5R6 C8 6.8pF ATC ATC800B6R8 C9 2.0pF ATC ATC800B2R0 C12 330 F Panasonic EEU-FC2A331 R1 10 Panasonic ERJ-8GEYJ100V RF3931 C1C3C4C5+ VGATE VDRAIN C13C14C11 C12+ C7C2 C10 strip 50 stripJ1 RF IN RF OUT C8 C9
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. 900MHz Evaluation Board Layout Device Impedances Note: Device impedances reported are the measured evaluation board impedances chosen for a trade off of efficiency, peak power, and linearity performance across the entire frequency bandwidth. Loadpull contours available on RFMD website. Frequency (MHz) Z Source () Z Load ( 880 4.2 + j9.0 12.9 + j14.2 900 4.3 + j10.0 13.6 + j15.1 920 4.4 + j11.3 14.4 + j16.0
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. Device Handling/Environmental Conditions GaN HEMT devices are ESD sensitive materials. Please use proper ESD precautions when handling devices or evaluation boards. GaN HEMT Capacitances The physical structure of the GaN HEMT results in three terminal capacitors similar to other FET technologies. These capacitances exist across all three terminals of th e device. The physical manufactured characteristics of the device determine the value of the C DS (drain to source), CGS (gate to source) and CGD (gate to drain). These capacitances change value as the terminal voltages are varied. RFMD presents the three terminal capacitances measured with the gate pinched off (VGS = -8V) and zero volts applied to the drain. During the measurement pro- cess, the parasitic capacitances of the package that holds the amplifier is removed through a calibration step. Any internal matching is included in the terminal capacitance measurements. The capacitance values presented in the typical characteristics table of the device represent the measured input (CISS), output (COSS), and reverse (CRSS) capacitance at the stated bias voltages. The relationship to three terminal capacitances is as follows: CISS = CGD + CGS COSS = CGD + CDS CRSS = CGD DC Bias The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts VGS the drain of the device is saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken to a potential lower than the source voltage to pinch off the device prior to applying the drain voltage, taking care not to exceed the gate voltage maximum limits. RFMD recommends applying VGS = -5V before applying any VDS. RF Power transistor performance capabilities are determin ed by the applied quiescent drain current. This drain current can be adjusted to trade off power, linearity, and efficiency characteristic s of the device. The recom- mended quiescent drain current (IDQ) shown in the RF typical performance table is chosen to best represent the operational characteristics for this device, considering manufacturing variations and expected performance. The user may choose alternate conditions for biasing this device based on performance trade off. Mounting and Thermal Considerations The thermal resistance provided as RTH (junction to case) represents only the packaged device thermal charac- teristics. This is measured using IR microscopy capturing the device under test temperature at the hottest spot of the die. At the same time, the package temperature is measured using a thermocouple touching the backside of the die embedded in the device heat sink but sized to prevent the meas urement system from impacting the results. Knowing the dissipated power at the time of the measurement, the thermal resistance is calculated. In order to achieve the advertised MTTF, proper heat removal must be considered to maintain the junction at or below the maximum of 200°C. Proper thermal design includes considerat ion of ambient temperature and the thermal resistance from ambient to the back of the package including heatsinking systems and air flow mecha- nisms. Incorporating the dissipated DC power, it is possible to calculate the junction temperature of the device.