ECP052G-PCB900

ECP052 WJCI | Alldatasheet

Document overview

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Technical content

Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com August 2004 ECP052 ½ Watt, High Linearity InGaP HBT Amplifier Product Information The Communications Edge TM Product Features

• 800 – 1000 MHz
• +28.5 dBm P1dB
• +44 dBm Output IP3
• 18 dB Gain @ 900 MHz
• Single Positive Supply (+5V)
• Available in SOIC-8 or 16pin 4mm QFN package

Applications

• Final stage amplifiers for Repeaters
• Mobile Infrastructure Product Description The ECP052 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance for various narrowband-tuned application circuits with up to +44 dBm OIP3 and +28.5 dBm of compressed 1dB power. It is housed in an industry standard SOIC-8 or 16-pin 4x4mm QFN SMT package. All devices are 100% RF and DC tested. The ECP052 is targeted for use as a driver amplifier in wireless infrastructure where high linearity and medium power is required. An internal active bias allows the ECP052 to maintain high linearity over temperature and operate directly off a si ngle +5V supply. This combination makes the device an excellent candidate for transceiver line cards in current and next generation multi-carrier 3G base stations. Functional Diagram ECP052D ECP052G Specifications (1) Parameter Units Min Typ Max Operational Bandwidth MHz 800 1000 Test Frequency MHz 850 Gain dB 15.5 17 Output P1dB dBm +27 +28 Output IP3 (2) dBm +42.5 +44 Test Frequency MHz 900 Gain dB 15.5 17.8 Input Return Loss dB 18 Output Return Loss dB 7 Output P1dB dBm +27 +28.7 Output IP3 (2) dBm +42.5 +43 IS-95A Channel Power @ -45 dBc ACPR, 1960 MHz dBm +23 Noise Figure dB 7 Operating Current Range, Icc (3) mA 200 250 300 Device Voltage, Vcc V +5 1. Test conditions unless otherwise noted: 25ºC, Vsupply = +5 V, in tuned application circuit. 2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. It is expected that the current can increase by an additional 50 mA at P1dB. Pin 1 is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull 12mA of current when used with a series bias resistor of R1=100Ω. (ie. total device current typically will be 262 mA.) Absolute Maximum Rating Ordering Information Parameters Rating Part No. Description Operating Case Temperature -40 to +85 °C ECP052D ½ Watt InGaP HBT Amplifier (16p 4mm Pkg) Storage Temperature -65 to +150 °C ECP052G ½ Watt InGaP HBT Amplifier (SOIC-8 Pkg) RF Input Power (continuous) +28 dBm ECP052D-PCB900 900 MHz Evaluation Board Device Voltage +8 V ECP052G-PCB900 900 MHz Evaluation Board Device Current 400 mA Device Power 2 W Operation of this device above any of these parameters may cause permanent damage. 16 15 14 13 5 6 7 8 N/C RF OUT RF OUT N/C Vref N/C RF IN N/C Vbias N/C N/C N/C N/C N/C N/C N/C Vref N/C RF IN N/C Vbias RF OUT RF OUT N/C

Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com August 2004 ECP052 ½ Watt, High Linearity InGaP HBT Amplifier Product Information The Communications Edge TM Typical Device Data S-Parameters (Vcc = +5 V, Icc = 250 mA, T = 25°C, unmatched 50 ohm system) 0 0.2 0.4 0.6 0.8 1 Frequency (GHz) Gain / Maximum Stable Gain Gain (dB) DB(|S[2,1]|) DB(GMax) 1.0 1.0-1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 S11 Swp Max 1GHz Swp Min 0.05GHz 1.0 1.0-1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 S22 Swp Max 1GHz Swp Min 0.05GHz Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line. The return loss plots are shown from 50 – 1000 MHz, with markers placed at 0.2 – 1 GHz in 0.1 GHz increments. S-Parameters (Vcc = +5 V, Icc = 250 mA, T = 25°C, unmatched 50 ohm system, calibrated to device leads) Freq (MHz) S11 (dB) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) Application Circuit PC Board Layout Circuit Board Material: .014” Getek, 4 - layer, 1 oz copper, Microstrip line details: width = .026”, spacing = .026” The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning Shunt capacitors – C8 and C9. The markers and vias are spaced in .050” increments.

Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com August 2004 ECP052 ½ Watt, High Linearity InGaP HBT Amplifier Product Information The Communications Edge TM

900 MHz Application Circuit (ECP052G-PCB900)

Typical RF Performance at 25°C S21 vs Frequency 840 860 880 900 920 940 Frequency (MHz) S21 (dB ) +25°C +85°C -40°C S11 vs. Frequency -35 -30 -25 -20 -15 -10 840 860 880 900 920 940 Frequency (MHz) S11 (dB ) +25°C +85°C -40°C S22 vs. Frequency -35 -30 -25 -20 -15 -10 840 860 880 900 920 940 Frequency (MHz) S22 (dB ) +25°C +85°C -40°C Noise Figure vs. Frequency 840 860 880 900 920 940 Frequency (MHz) NF (dB ) +25°C +80°C -40°C P1 dB vs. Frequency 840 860 880 900 920 940 Frequency (MHz) P1 dB (dBm ) +25°C +85°C -40°C ACPR vs. Channel Power IS-95, 9 Ch. Fw d, ±885KHz Meas BW, 900 MHz -80 -75 -70 -65 -60 -55 -50 -45 -40 18 19 20 21 22 23 24 Output Channel Power (dBm) ACPR (dBm ) +25°C +85°C -40°C OIP3 vs. Temperature freq. = 900, 901 MHz, +13 dBm /tone -40 -15 10 35 60 85 Temperature (°C) OIP3 ( dBm) OIP3 vs. Output Power freq. = 900, 901 MHz, +25°C 8 1 01 21 41 61 82 0 Output Power (dBm) OI P3 (dBm ) OIP3 vs. Frequency +25°, +13 dBm / tone 840 860 880 900 920 940 Frequency (MHz) OIP3 ( dBm) Frequency 900 MHz S21 – Gain 17.5 dB S11 – Input Return Loss -18 dB S22 – Output Return Loss -7 dB Output P1dB +28.7 dBm Output IP3 (+11 dBm / tone, 1 MHz spacing) +43 dBm Channel Power (@-45 dBc ACPR, IS-95 9 channels fwd) +23 dBm Noise Figure 7 dB Device / Supply Voltage +5 V Quiescent Current 250 mA

Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com August 2004 ECP052 ½ Watt, High Linearity InGaP HBT Amplifier Product Information The Communications Edge TM ECP052G (SOIC-8 Package) Mechanical Information Outline Drawing Land Pattern Thermal Specifications Parameter Rating Operating Case Temperature -40 to +85 ° C Thermal Resistance, Rth (1) 62 ° C / W Junction Temperature, Tjc (2) 162 ° C Notes: 1. The thermal resistance is referenced from the junction- to-case at a case temperature of 85 ° C. Tjc is a function of the voltage at pins 6 and 7 and the current applied to pins 6, 7, and 8 and can be calculated by: Tjc = Tcase + Rth * Vcc * Icc 2. This corresponds to the typical biasing condition of +5V, 250 mA at an 85 ° C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 247° C. Product Marking The component will be marked with an “ECP052G” designator with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the “Application Notes” section. ESD / MSL Information ESD Rating: Class 1B Value: Passes between 500 and 1000V Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114 MSL Rating: Level 3 at +235° C convection reflow Standard: JEDEC Standard J-STD-020 Functional Diagram Function Pin No. Vref 1 Input 3 Output 6, 7 Vbias 8 GND Backside Paddle N/C or GND 2, 4, 5 Mounting Config. Notes 1. A heatsink underneath the ar ea of the PCB for the mounted device is strictly required for proper thermal operation. Damage to the device can occur without the use of one. 2. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and have a final plated thru diameter of .25 mm (.010”). 3. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 4. Mounting screws can be adde d near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 5. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 6. RF trace width depends upon the PC board material and construction. 7. Use 1 oz. Copper minimum. 8 All dimensions are in millimeters (inches). Angles are in degrees. MTTF vs. GND Tab Temperature 100 1000 10000 100000 60 70 80 90 100 110 120 Tab Temperature (°C) MTTF (million hrs)

Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com August 2004 ECP052 ½ Watt, High Linearity InGaP HBT Amplifier Product Information The Communications Edge TM ECP052D (16-pin 4x4mm Package) Mechanical Information Outline Drawing Land Pattern 0.65mm TYP. TYP. SOLDERMASK SWELL TO BE 0.5mm FROM OUTSIDE EDGE OF ALL PADS GROUND PLANE AREA FOR VIAS 2.23mm X 2.23mm RECOMMENDED PAD 0.76mm X 0.34mm DEVICE GROUND PAD 2.0mm X 2.0mm 4.00mm 16L 4.0mm X 4.0mm PACKAGE 0.25mm DIA. THERMAL GROUND VIA HOLE VIAS ARE PLACED ON A 0.65mm GRID. VIAS ARE TO BE CONNECTED TO TOP, BOTTOM, AND INTERNAL GROUND PLANES IN ORDER TO MAXIMIZE HEAT DISSIPATION. FOR .031" THK FR4 MATERIAL, VIA BARREL PLATING TO BE MIN. 0.0014 THICK. VIAS TO BE PLUGGED WITH EITHER CONDUCTIVE OR NON-CONDUCTIVE EPOXY TO PREVENT SOLDER. DRAINS THROUGH VIA IN REFLOW PROCESS Thermal Specifications Parameter Rating Operating Case Temperature -40 to +85 ° C Thermal Resistance, Rth (1) 62 ° C / W Junction Temperature, Tjc (2) 162 ° C Notes: 1. The thermal resistance is referenced from the junction- to-case at a case temperature of 85 ° C. Tjc is a function of the voltage at pins 10 and 11 and the current applied to pins 10, 11, and 16 and can be calculated by: Tjc = Tcase + Rth * Vcc * Icc 2. This corresponds to the typical biasing condition of +5V, 250 mA at an 85 ° C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 247° C. Product Marking The component will be marked with an “ECP052D” designator with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the “Application Notes” section. ESD / MSL Information ESD Rating: Class 1B Value: Passes between 500 and 1000V Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114 MSL Rating: Level 3 at +235° C convection reflow Standard: JEDEC Standard J-STD-020 Functional Diagram Function Pin No. Vref 1 RF Input 3 RF Output 10, 11 Vbias 16 GND Backside Paddle N/C or GND 2, 4-9, 12-15 Mounting Config. Notes 1. A heatsink underneath the ar ea of the PCB for the mounted device is strictly required for proper thermal operation. Damage to the device can occur without the use of one. 2. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and have a final plated thru diameter of .25 mm (.010”). 3. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 4. Mounting screws can be adde d near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 5. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 6. RF trace width depends upon the PC board material and construction. 7. Use 1 oz. Copper minimum. 8 All dimensions are in millimeters (inches). Angles are in degrees. 16 15 14 13 5 6 7 8 N/C RF OUT RF OUT N/C Vref N/C RF IN N/C Vbias N/C N/C N/C N/C N/C N/C N/C MTTF vs. GND Tab Temperature 100 1000 10000 100000 60 70 80 90 100 110 120 Tab Temperature (°C) MTTF (million hrs)